{"id":"https://openalex.org/W2889025472","doi":"https://doi.org/10.1109/drc.2018.8442214","title":"High Voltage Vertical Gallium Nitride Pseudo-Junction-Barrier-Schottky Diode with Ion Implantation","display_name":"High Voltage Vertical Gallium Nitride Pseudo-Junction-Barrier-Schottky Diode with Ion Implantation","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2889025472","doi":"https://doi.org/10.1109/drc.2018.8442214","mag":"2889025472"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442214","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442214","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025089090","display_name":"Sizhen Wang","orcid":"https://orcid.org/0000-0003-0202-0091"},"institutions":[{"id":"https://openalex.org/I137902535","display_name":"North Carolina State University","ror":"https://ror.org/04tj63d06","country_code":"US","type":"education","lineage":["https://openalex.org/I137902535"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Sizhen Wang","raw_affiliation_strings":["North Carolina State University, Raleigh, NC, USA"],"affiliations":[{"raw_affiliation_string":"North Carolina State University, Raleigh, NC, USA","institution_ids":["https://openalex.org/I137902535"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5011191579","display_name":"Alex Q. Huang","orcid":"https://orcid.org/0000-0003-3427-0335"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alex Q. Huang","raw_affiliation_strings":["The University of Texas at Austin, Austin, TX, USA"],"affiliations":[{"raw_affiliation_string":"The University of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5025089090"],"corresponding_institution_ids":["https://openalex.org/I137902535"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10661915,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"106","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.8278013467788696},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7977707386016846},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.7368304133415222},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.5899133682250977},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5868110060691833},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.565209686756134},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.5644412636756897},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.5637868046760559},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5513449311256409},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.5424990057945251},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.515972912311554},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.468021959066391},{"id":"https://openalex.org/keywords/ion-implantation","display_name":"Ion implantation","score":0.4671793580055237},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4291263222694397},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.4173871874809265},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3239341676235199},{"id":"https://openalex.org/keywords/ion","display_name":"Ion","score":0.21127364039421082},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17511463165283203},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.08707249164581299},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.06210401654243469}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.8278013467788696},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7977707386016846},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.7368304133415222},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.5899133682250977},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5868110060691833},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.565209686756134},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.5644412636756897},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5637868046760559},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5513449311256409},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.5424990057945251},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.515972912311554},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.468021959066391},{"id":"https://openalex.org/C41823505","wikidata":"https://www.wikidata.org/wiki/Q1436752","display_name":"Ion implantation","level":3,"score":0.4671793580055237},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4291263222694397},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.4173871874809265},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3239341676235199},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.21127364039421082},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17511463165283203},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.08707249164581299},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.06210401654243469},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8442214","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442214","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7300000190734863}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W1519112430","https://openalex.org/W2052351478"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1540585561","https://openalex.org/W1981646027","https://openalex.org/W2917180890","https://openalex.org/W2614156624","https://openalex.org/W2911343812","https://openalex.org/W2124971553","https://openalex.org/W2003184216","https://openalex.org/W2911053491","https://openalex.org/W2550502560"],"abstract_inverted_index":{"Nowadays":[0],"vertical":[1,85],"GaN":[2,23,84],"power":[3,26,64,86],"devices":[4],"[1-3]":[5],"are":[6],"under":[7],"intensive":[8],"research":[9],"from":[10],"world-":[11],"wide.":[12],"With":[13],"its":[14,67],"superior":[15],"physical":[16],"properties,":[17],"e.g.":[18],"higher":[19],"critical":[20],"electrical":[21],"field,":[22],"material":[24],"based":[25],"device":[27],"can":[28],"provide":[29],"much":[30],"better":[31],"performance":[32],"than":[33],"that":[34],"of":[35,43],"Si":[36],"and":[37],"SiC.":[38],"But":[39],"due":[40],"to":[41,48,61,81],"lack":[42],"selective":[44],"area":[45],"doping":[46],"technology":[47],"form":[49],"high":[50,68],"quality":[51],"P-N":[52],"junction":[53],"[4],":[54],"complicated":[55],"epitaxial":[56],"regrowth":[57],"method":[58],"is":[59],"used":[60],"fabricate":[62],"GaN-based":[63],"transistor":[65],"[5],":[66],"cost":[69],"would":[70],"inhibit":[71],"the":[72],"adoption":[73],"for":[74,83],"volume":[75],"production.":[76],"So":[77],"new":[78],"approaches":[79],"need":[80],"develop":[82],"devices.":[87]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}