{"id":"https://openalex.org/W2888805347","doi":"https://doi.org/10.1109/drc.2018.8442192","title":"Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy","display_name":"Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2888805347","doi":"https://doi.org/10.1109/drc.2018.8442192","mag":"2888805347"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442192","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442192","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5052995843","display_name":"C. Skierbiszewski","orcid":"https://orcid.org/0000-0002-4718-4607"},"institutions":[{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]},{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":true,"raw_author_name":"C. Skierbiszewski","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006334152","display_name":"Henryk Turski","orcid":"https://orcid.org/0000-0002-2686-9842"},"institutions":[{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]},{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"H. Turski","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067336961","display_name":"Miko\u0142aj \u017bak","orcid":"https://orcid.org/0000-0003-4370-9290"},"institutions":[{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]},{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"M. Zak","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058037999","display_name":"Krzesimir Nowakowski-Szkudlarek","orcid":"https://orcid.org/0000-0002-8174-1518"},"institutions":[{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]},{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"K. Nowakowski-Szkudlarek","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053209342","display_name":"G. Muzio\u0142","orcid":"https://orcid.org/0000-0001-7430-3838"},"institutions":[{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]},{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"G. Muziol","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069096575","display_name":"M. Siekacz","orcid":"https://orcid.org/0000-0002-2359-8813"},"institutions":[{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]},{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"M. Siekacz","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019592212","display_name":"Anna Feduniewicz\u2010\u017bmuda","orcid":"https://orcid.org/0000-0002-8801-9851"},"institutions":[{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]},{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"A. Feduniewicz-Zmuda","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw, 01-142, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw, 01-142, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5047214541","display_name":"Marta Sawicka","orcid":"https://orcid.org/0000-0002-8039-8084"},"institutions":[{"id":"https://openalex.org/I4210091332","display_name":"Institute of High Pressure Physics","ror":"https://ror.org/00fb7yx07","country_code":"PL","type":"facility","lineage":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]},{"id":"https://openalex.org/I99542240","display_name":"Polish Academy of Sciences","ror":"https://ror.org/01dr6c206","country_code":"PL","type":"funder","lineage":["https://openalex.org/I99542240"]}],"countries":["PL"],"is_corresponding":false,"raw_author_name":"M. Sawicka","raw_affiliation_strings":["Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland"],"affiliations":[{"raw_affiliation_string":"Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland","institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5052995843"],"corresponding_institution_ids":["https://openalex.org/I4210091332","https://openalex.org/I99542240"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.10611816,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"107","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10781","display_name":"Plasma Diagnostics and Applications","score":0.9955999851226807,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/light-emitting-diode","display_name":"Light-emitting diode","score":0.8365427255630493},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.8336511254310608},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7806187272071838},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6972513198852539},{"id":"https://openalex.org/keywords/metalorganic-vapour-phase-epitaxy","display_name":"Metalorganic vapour phase epitaxy","score":0.6872496604919434},{"id":"https://openalex.org/keywords/molecular-beam-epitaxy","display_name":"Molecular beam epitaxy","score":0.678676426410675},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.6381722688674927},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.6310173869132996},{"id":"https://openalex.org/keywords/laser","display_name":"Laser","score":0.4649827182292938},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.44353312253952026},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.43567901849746704},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.3472716212272644},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.20130518078804016},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.1567046046257019},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.0869995653629303}],"concepts":[{"id":"https://openalex.org/C176666156","wikidata":"https://www.wikidata.org/wiki/Q25504","display_name":"Light-emitting diode","level":2,"score":0.8365427255630493},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.8336511254310608},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7806187272071838},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6972513198852539},{"id":"https://openalex.org/C175665537","wikidata":"https://www.wikidata.org/wiki/Q1924991","display_name":"Metalorganic vapour phase epitaxy","level":4,"score":0.6872496604919434},{"id":"https://openalex.org/C3792809","wikidata":"https://www.wikidata.org/wiki/Q898542","display_name":"Molecular beam epitaxy","level":4,"score":0.678676426410675},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.6381722688674927},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.6310173869132996},{"id":"https://openalex.org/C520434653","wikidata":"https://www.wikidata.org/wiki/Q38867","display_name":"Laser","level":2,"score":0.4649827182292938},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.44353312253952026},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.43567901849746704},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.3472716212272644},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.20130518078804016},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1567046046257019},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0869995653629303},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/drc.2018.8442192","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442192","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W2066191723","https://openalex.org/W2152030340","https://openalex.org/W2264572625","https://openalex.org/W2406337259","https://openalex.org/W2786470011","https://openalex.org/W3104108741"],"related_works":["https://openalex.org/W1790618316","https://openalex.org/W1972712827","https://openalex.org/W2016236758","https://openalex.org/W2102324661","https://openalex.org/W4239758596","https://openalex.org/W4237354673","https://openalex.org/W2944731578","https://openalex.org/W2751719992","https://openalex.org/W307570395","https://openalex.org/W1966070697"],"abstract_inverted_index":{"One":[0],"of":[1,24,30,45,96,103,130,162,208,223],"the":[2,31,58,97,101,104,131,142,146,158,206,209,212],"most":[3],"challenging":[4],"issues":[5],"to":[6,38,57,121,140,157],"address":[7],"in":[8,73,100,145,211],"nitride":[9,74],"based":[10],"devices":[11,132,224],"like":[12],"light":[13],"emitting":[14],"diodes":[15,19],"(LEDs)":[16],"and":[17,42,48,69,76,112,179,186,200],"laser":[18],"(LDs)":[20],"is":[21,35,138,164],"poor":[22],"conductivity":[23,144],"p-type":[25,32,70,143,214],"region.":[26],"Additionally,":[27],"high":[28],"resistance":[29,84,108],"contact,":[33],"that":[34,82,160],"very":[36],"difficult":[37,139],"reduce,":[39],"determines":[40],"performance":[41,222],"influences":[43],"design":[44],"InGaN":[46],"LEDs":[47,75,181],"LDs.":[49,77],"Recently,":[50],"there":[51],"has":[52],"been":[53],"increasing":[54],"attention":[55],"given":[56],"interband":[59],"tunnel":[60],"junctions":[61],"(TJ)":[62],"for":[63,85,127,173,217],"effective":[64],"carrier":[65],"conversion":[66],"between":[67],"n-type":[68,154,168],"material":[71],"region":[72,102,195],"It":[78],"was":[79,177,196],"clearly":[80],"demonstrated":[81],"TJ":[83,109,180,183,187,202],"wide":[86],"bandgap":[87],"semiconductors":[88],"can":[89,220],"be":[90,122],"effectively":[91],"suppressed":[92],"by":[93,198,203,226],"making":[94],"use":[95],"piezoelectric":[98],"fields":[99],"junction":[105],"[1].":[106],"Low":[107],"were":[110,190],"investigated":[111],"realized":[113],"using":[114],"GaN/InGaN/GaN":[115],"heterostructures.":[116],"The":[117],"MBE":[118,218],"technology":[119],"seems":[120],"more":[123],"efficient":[124],"than":[125],"MOVPE":[126,136,199,213],"practical":[128],"realization":[129],"with":[133],"TJ.":[134],"For":[135],"it":[137],"activate":[141],"(In)GaN:Mg":[147],"layers":[148,155],"which":[149],"are":[150],"deeply":[151],"buried":[152],"below":[153],"due":[156],"fact":[159],"diffusion":[161],"hydrogen":[163],"completely":[165],"blocked":[166],"through":[167],"layers.":[169],"Therefore":[170],"several":[171],"attempts":[172],"hybrid":[174,227],"MOVPE/MBE":[175],"growth":[176],"performed":[178],"[2],":[182],"LDs":[184],"[3]":[185],"VCSELs":[188],"[4]":[189],"shown":[191],"where":[192],"active":[193],"p-i-n":[194],"grown":[197,225],"p-n":[201],"MBE.":[204],"However,":[205],"presence":[207],"impurities":[210],"surface":[215],"used":[216],"regrowth":[219],"deteriorate/limit":[221],"method.":[228]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}