{"id":"https://openalex.org/W2889240649","doi":"https://doi.org/10.1109/drc.2018.8442150","title":"High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach","display_name":"High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach","publication_year":2018,"publication_date":"2018-06-01","ids":{"openalex":"https://openalex.org/W2889240649","doi":"https://doi.org/10.1109/drc.2018.8442150","mag":"2889240649"},"language":"en","primary_location":{"id":"doi:10.1109/drc.2018.8442150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442150","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://eprints.gla.ac.uk/169680/","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086980120","display_name":"David Alan John Millar","orcid":null},"institutions":[{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"D. A. J. Millar","raw_affiliation_strings":["School of Engineering, University of Glasgow, Glasgow, United Kingdom"],"affiliations":[{"raw_affiliation_string":"School of Engineering, University of Glasgow, Glasgow, United Kingdom","institution_ids":["https://openalex.org/I7882870"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052744244","display_name":"X. Li","orcid":"https://orcid.org/0009-0002-4958-1523"},"institutions":[{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"X. Li","raw_affiliation_strings":["School of Engineering, University of Glasgow, Glasgow, United Kingdom"],"affiliations":[{"raw_affiliation_string":"School of Engineering, University of Glasgow, Glasgow, United Kingdom","institution_ids":["https://openalex.org/I7882870"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066899300","display_name":"Uthayasankaran Peralagu","orcid":"https://orcid.org/0000-0001-9166-4408"},"institutions":[{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"U. Peralagu","raw_affiliation_strings":["School of Engineering, University of Glasgow, Glasgow, United Kingdom"],"affiliations":[{"raw_affiliation_string":"School of Engineering, University of Glasgow, Glasgow, United Kingdom","institution_ids":["https://openalex.org/I7882870"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110449889","display_name":"Matthew J. Steer","orcid":null},"institutions":[{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"M. J. Steer","raw_affiliation_strings":["University of Glasgow, Glasgow, Glasgow, GB"],"affiliations":[{"raw_affiliation_string":"University of Glasgow, Glasgow, Glasgow, GB","institution_ids":["https://openalex.org/I7882870"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045175201","display_name":"I.M. Pavey","orcid":null},"institutions":[{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"I.M. Pavey","raw_affiliation_strings":["School of Engineering, University of Glasgow, Glasgow, United Kingdom"],"affiliations":[{"raw_affiliation_string":"School of Engineering, University of Glasgow, Glasgow, United Kingdom","institution_ids":["https://openalex.org/I7882870"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040375397","display_name":"Guilherme Gaspar","orcid":"https://orcid.org/0000-0003-1285-5826"},"institutions":[{"id":"https://openalex.org/I7882870","display_name":"University of Glasgow","ror":"https://ror.org/00vtgdb53","country_code":"GB","type":"education","lineage":["https://openalex.org/I7882870"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"G. Gaspar","raw_affiliation_strings":["School of Engineering, University of Glasgow, Glasgow, United Kingdom"],"affiliations":[{"raw_affiliation_string":"School of Engineering, University of Glasgow, Glasgow, United Kingdom","institution_ids":["https://openalex.org/I7882870"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101835074","display_name":"Michael Schmidt","orcid":"https://orcid.org/0000-0002-5601-460X"},"institutions":[{"id":"https://openalex.org/I181231927","display_name":"National University of Ireland","ror":"https://ror.org/00shsf120","country_code":"IE","type":"education","lineage":["https://openalex.org/I181231927"]},{"id":"https://openalex.org/I27577105","display_name":"University College Cork","ror":"https://ror.org/03265fv13","country_code":"IE","type":"education","lineage":["https://openalex.org/I27577105"]}],"countries":["IE"],"is_corresponding":false,"raw_author_name":"M. Schmidt","raw_affiliation_strings":["University College Cork National University of Ireland, Cork, IE"],"affiliations":[{"raw_affiliation_string":"University College Cork National University of Ireland, Cork, IE","institution_ids":["https://openalex.org/I181231927","https://openalex.org/I27577105"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053550415","display_name":"Paul K. Hurley","orcid":"https://orcid.org/0000-0001-5137-721X"},"institutions":[{"id":"https://openalex.org/I27577105","display_name":"University College Cork","ror":"https://ror.org/03265fv13","country_code":"IE","type":"education","lineage":["https://openalex.org/I27577105"]}],"countries":["IE"],"is_corresponding":false,"raw_author_name":"P.K. Hurley","raw_affiliation_strings":["Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland"],"affiliations":[{"raw_affiliation_string":"Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland","institution_ids":["https://openalex.org/I27577105"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045081240","display_name":"Iain Thayne","orcid":"https://orcid.org/0000-0002-9197-5393"},"institutions":[{"id":"https://openalex.org/I27577105","display_name":"University College Cork","ror":"https://ror.org/03265fv13","country_code":"IE","type":"education","lineage":["https://openalex.org/I27577105"]}],"countries":["IE"],"is_corresponding":false,"raw_author_name":"I. G. Thayne","raw_affiliation_strings":["Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland"],"affiliations":[{"raw_affiliation_string":"Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, Ireland","institution_ids":["https://openalex.org/I27577105"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5086980120"],"corresponding_institution_ids":["https://openalex.org/I7882870"],"apc_list":null,"apc_paid":null,"fwci":0.2575,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.57045327,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"69","issue":null,"first_page":"1","last_page":"2"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7197505831718445},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6165239810943604},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6005190014839172},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5981987118721008},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.5749437212944031},{"id":"https://openalex.org/keywords/aspect-ratio","display_name":"Aspect ratio (aeronautics)","score":0.5745395421981812},{"id":"https://openalex.org/keywords/scattering","display_name":"Scattering","score":0.5185375809669495},{"id":"https://openalex.org/keywords/fin","display_name":"Fin","score":0.4897010624408722},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.4402676224708557},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.4249917268753052},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.4157383441925049},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.35169607400894165},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.35146909952163696},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2643977105617523},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2447342574596405},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1474267542362213},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.12971624732017517},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.12079477310180664},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09606501460075378},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09129542112350464}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7197505831718445},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6165239810943604},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6005190014839172},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5981987118721008},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5749437212944031},{"id":"https://openalex.org/C82558694","wikidata":"https://www.wikidata.org/wiki/Q1545619","display_name":"Aspect ratio (aeronautics)","level":2,"score":0.5745395421981812},{"id":"https://openalex.org/C191486275","wikidata":"https://www.wikidata.org/wiki/Q210028","display_name":"Scattering","level":2,"score":0.5185375809669495},{"id":"https://openalex.org/C91721477","wikidata":"https://www.wikidata.org/wiki/Q778612","display_name":"Fin","level":2,"score":0.4897010624408722},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4402676224708557},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.4249917268753052},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.4157383441925049},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.35169607400894165},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.35146909952163696},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2643977105617523},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2447342574596405},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1474267542362213},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.12971624732017517},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.12079477310180664},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09606501460075378},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09129542112350464},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/drc.2018.8442150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/drc.2018.8442150","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 76th Device Research Conference (DRC)","raw_type":"proceedings-article"},{"id":"pmh:oai:eprints.gla.ac.uk:169680","is_oa":true,"landing_page_url":"http://eprints.gla.ac.uk/169680/","pdf_url":null,"source":{"id":"https://openalex.org/S4210235606","display_name":"ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)","issn_l":"2622-8912","issn":["2622-8912","2622-8920"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"PeerReviewed"}],"best_oa_location":{"id":"pmh:oai:eprints.gla.ac.uk:169680","is_oa":true,"landing_page_url":"http://eprints.gla.ac.uk/169680/","pdf_url":null,"source":{"id":"https://openalex.org/S4210235606","display_name":"ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam)","issn_l":"2622-8912","issn":["2622-8912","2622-8920"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"PeerReviewed"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2082348723","https://openalex.org/W2119378720","https://openalex.org/W2229585412","https://openalex.org/W2289723832"],"related_works":["https://openalex.org/W2560063780","https://openalex.org/W3014521742","https://openalex.org/W2113765940","https://openalex.org/W2092177242","https://openalex.org/W4295791167","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W2000473227","https://openalex.org/W2019513361","https://openalex.org/W4386230336"],"abstract_inverted_index":{"The":[0,18],"junctionless":[1,141],"MOSFET":[2,100],"(JLFET)":[3],"architecture":[4],"has":[5],"attracted":[6],"much":[7],"attention":[8],"as":[9,43,53],"an":[10,39],"enabling":[11],"technology":[12],"for":[13,47,50],"ultra-scaled":[14],"CMOS":[15,67,123],"devices":[16,68],"[1].":[17,34],"dominant":[19],"scattering":[20,26,63],"mechanism":[21],"in":[22,200],"JLFETs":[23,48],"is":[24],"impurity":[25,62],"due":[27,60],"to":[28,61,79,118,132,189,205],"its":[29],"necessarily":[30],"highly":[31],"doped":[32],"channel":[33,45],"Accordingly,":[35],"III-V's":[36],"may":[37],"offer":[38],"even":[40],"greater":[41],"advantage":[42],"the":[44,81,104,153,168,176,179],"material":[46],"than":[49,152],"conventional":[51],"MOSFETs":[52],"they":[54],"suffer":[55],"less":[56],"from":[57],"mobility":[58],"degradation":[59],"[2].":[64],"Current":[65],"Si":[66,122],"employ":[69],"non-planar":[70],"architectures":[71],"with":[72,121],"high":[73,191],"aspect":[74,192],"ratio":[75],"fins":[76],"which":[77,149,196],"serve":[78],"increase":[80],"on":[82],"current":[83],"(Ion)":[84],"per":[85],"chip":[86],"surface":[87],"area":[88],"[3].":[89],"This":[90,125],"necessitates":[91],"that":[92],"any":[93],"incarnation":[94],"of":[95,157,178,202],"a":[96,114,127,184],"III":[97],"-":[98],"V":[99],"must":[101,109],"also":[102],"exploit":[103],"vertical":[105],"dimension.":[106],"Additionally,":[107],"it":[108],"do":[110],"so":[111],"by":[112,167],"employing":[113],"`top-down'":[115],"fabrication":[116],"approach":[117],"remain":[119],"compatible":[120],"processing.":[124],"requires":[126],"low":[128,185],"Dit":[129],"dielectric":[130],"interface":[131],"etched":[133],"III-V":[134,140],"fin":[135,147,206],"sidewalls.":[136,181],"To":[137],"date,":[138],"all":[139],"FinFETs":[142],"(JLFinFETs)":[143],"demonstrated":[144],"have":[145,197],"employed":[146],"heights":[148],"are":[150],"smaller":[151],"maximum":[154],"depletion":[155],"width":[156],"their":[158],"respective":[159],"channels,":[160],"and":[161],"therefore":[162],"can":[163],"be":[164],"well":[165],"modulated":[166],"top":[169],"gate":[170],"only:":[171],"offering":[172],"little":[173],"insight":[174],"into":[175],"effectiveness":[177],"gated":[180],"We":[182],"implement":[183],"damage":[186],"etch":[187],"process":[188],"form":[190],"ratio,":[193],"In053Ga047As":[194],"JLFinFETs":[195],"record":[198],"performance":[199],"terms":[201],"Ion":[203],"normalized":[204],"width.":[207]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}