{"id":"https://openalex.org/W2053616004","doi":"https://doi.org/10.1109/dft.2012.6378203","title":"Hardening a memory cell for low power operation by gate leakage reduction","display_name":"Hardening a memory cell for low power operation by gate leakage reduction","publication_year":2012,"publication_date":"2012-10-01","ids":{"openalex":"https://openalex.org/W2053616004","doi":"https://doi.org/10.1109/dft.2012.6378203","mag":"2053616004"},"language":"en","primary_location":{"id":"doi:10.1109/dft.2012.6378203","is_oa":false,"landing_page_url":"https://doi.org/10.1109/dft.2012.6378203","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113560871","display_name":"Jianping Gong","orcid":null},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Jianping Gong","raw_affiliation_strings":["Department of ECE, Northeastern University, Boston, MA, USA","Northeastern University, Dept. of ECE Boston MA 02115, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of ECE, Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]},{"raw_affiliation_string":"Northeastern University, Dept. of ECE Boston MA 02115, USA#TAB#","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102913838","display_name":"Yong-Bin Kim","orcid":"https://orcid.org/0000-0002-7014-5630"},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yong-Bin Kim","raw_affiliation_strings":["Department of ECE, Northeastern University, Boston, MA, USA","Northeastern University, Dept. of ECE Boston MA 02115, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of ECE, Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]},{"raw_affiliation_string":"Northeastern University, Dept. of ECE Boston MA 02115, USA#TAB#","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001979328","display_name":"Fabrizio Lombardi","orcid":"https://orcid.org/0000-0003-3152-3245"},"institutions":[{"id":"https://openalex.org/I12912129","display_name":"Northeastern University","ror":"https://ror.org/04t5xt781","country_code":"US","type":"education","lineage":["https://openalex.org/I12912129"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Fabrizio Lombardi","raw_affiliation_strings":["Department of ECE, Northeastern University, Boston, MA, USA","Northeastern University, Dept. of ECE Boston MA 02115, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"Department of ECE, Northeastern University, Boston, MA, USA","institution_ids":["https://openalex.org/I12912129"]},{"raw_affiliation_string":"Northeastern University, Dept. of ECE Boston MA 02115, USA#TAB#","institution_ids":["https://openalex.org/I12912129"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5005550142","display_name":"Jie Han","orcid":"https://orcid.org/0000-0002-8849-4994"},"institutions":[{"id":"https://openalex.org/I154425047","display_name":"University of Alberta","ror":"https://ror.org/0160cpw27","country_code":"CA","type":"education","lineage":["https://openalex.org/I154425047"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Jie Han","raw_affiliation_strings":["Department of ECE, University of Alberta, Edmonton, Canada","University of Alberta, Dept of ECE, Edmonton, Canada"],"affiliations":[{"raw_affiliation_string":"Department of ECE, University of Alberta, Edmonton, Canada","institution_ids":["https://openalex.org/I154425047"]},{"raw_affiliation_string":"University of Alberta, Dept of ECE, Edmonton, Canada","institution_ids":["https://openalex.org/I154425047"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5113560871"],"corresponding_institution_ids":["https://openalex.org/I12912129"],"apc_list":null,"apc_paid":null,"fwci":0.7365,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.74359051,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"73","last_page":"78"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6383906602859497},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5936665534973145},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5907852053642273},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.5462959408760071},{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"Figure of merit","score":0.5320271849632263},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5284975171089172},{"id":"https://openalex.org/keywords/hardening","display_name":"Hardening (computing)","score":0.5002584457397461},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4933411180973053},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4800175726413727},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45958369970321655},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.43967145681381226},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.43731045722961426},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.4341539144515991},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.4300786256790161},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4017300009727478},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.35670092701911926},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3192840814590454},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.25417110323905945},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2467961609363556},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17371076345443726},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.086646169424057}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6383906602859497},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5936665534973145},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5907852053642273},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.5462959408760071},{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.5320271849632263},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5284975171089172},{"id":"https://openalex.org/C44255700","wikidata":"https://www.wikidata.org/wiki/Q978423","display_name":"Hardening (computing)","level":3,"score":0.5002584457397461},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4933411180973053},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4800175726413727},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45958369970321655},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.43967145681381226},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.43731045722961426},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.4341539144515991},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.4300786256790161},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4017300009727478},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35670092701911926},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3192840814590454},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.25417110323905945},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2467961609363556},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17371076345443726},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.086646169424057},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/dft.2012.6378203","is_oa":false,"landing_page_url":"https://doi.org/10.1109/dft.2012.6378203","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1966025033","https://openalex.org/W2030501553","https://openalex.org/W2050431855","https://openalex.org/W2083664225","https://openalex.org/W2084950024","https://openalex.org/W2096029841","https://openalex.org/W2099569658","https://openalex.org/W2105480662","https://openalex.org/W2105981249","https://openalex.org/W2113989694","https://openalex.org/W2126892355","https://openalex.org/W2132280722","https://openalex.org/W2141068710","https://openalex.org/W2142358791","https://openalex.org/W2143253204","https://openalex.org/W2161549238","https://openalex.org/W3149410719"],"related_works":["https://openalex.org/W2152101054","https://openalex.org/W1973117258","https://openalex.org/W3157076093","https://openalex.org/W2118243209","https://openalex.org/W4229455537","https://openalex.org/W4312057941","https://openalex.org/W2139774918","https://openalex.org/W2136334496","https://openalex.org/W2776347734","https://openalex.org/W2053616004"],"abstract_inverted_index":{"A":[0,32,101],"single":[1,161],"event":[2,162],"causing":[3],"multiple":[4],"node":[5,155,165],"upsets":[6],"is":[7,16,50,81,114],"a":[8,94,160],"significant":[9],"phenomenon":[10],"for":[11,57,65,88,97,131],"CMOS":[12],"memories;":[13],"its":[14],"occurrence":[15],"due":[17],"to":[18,43,76,84,159],"the":[19,24,30,78,85,107,123,149,153],"reduced":[20],"feature":[21,118],"size":[22],"and":[23,52,120,139],"lower":[25],"power":[26,34,46,99,112,135],"supply":[27],"voltage":[28,42],"in":[29],"nanoscales.":[31],"low":[33,98,111],"memory":[35],"cell":[36,87],"that":[37],"utilizes":[38],"positive":[39],"ground":[40,125],"level":[41,126],"reduce":[44,77],"leakage":[45,80],"(requiring":[47],"two":[48,53,74],"transistors),":[49],"considered":[51],"schemes":[54],"are":[55,69,144],"proposed":[56],"hardening.":[58],"These":[59],"designs":[60],"require":[61],"4":[62],"additional":[63],"transistors":[64,75],"hardening,":[66],"thus":[67],"they":[68],"12T.":[70],"The":[71],"addition":[72],"of":[73,106,109,122,129,152],"gate":[79],"also":[82],"applied":[83],"DICE":[86],"comparison":[89],"purposes":[90],"(thus":[91],"making":[92],"it":[93],"14T":[95],"scheme":[96],"operation).":[100],"comprehensive":[102],"simulation":[103],"based":[104],"assessment":[105],"performance":[108,132],"these":[110],"cells":[113],"pursued":[115],"under":[116],"different":[117],"sizes":[119],"values":[121],"(virtual)":[124],"voltage.":[127],"Figures":[128],"merit":[130],"such":[133],"as":[134,146,148],"dissipation,":[136],"write/read":[137],"times":[138],"static":[140],"noise":[141],"margin":[142],"(SNM)":[143],"reported":[145],"well":[147],"charge":[150],"plot":[151],"critical":[154],"pair":[156],"(for":[157],"tolerance":[158],"with":[163],"single/multiple":[164],"upset).":[166]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}