{"id":"https://openalex.org/W2159036272","doi":"https://doi.org/10.1109/ddecs.2014.6868799","title":"A unified CMOS inverter model for planar and FinFET nanoscale technologies","display_name":"A unified CMOS inverter model for planar and FinFET nanoscale technologies","publication_year":2014,"publication_date":"2014-04-01","ids":{"openalex":"https://openalex.org/W2159036272","doi":"https://doi.org/10.1109/ddecs.2014.6868799","mag":"2159036272"},"language":"en","primary_location":{"id":"doi:10.1109/ddecs.2014.6868799","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ddecs.2014.6868799","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"17th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069176937","display_name":"Panagiotis Chaourani","orcid":"https://orcid.org/0000-0002-7534-9317"},"institutions":[{"id":"https://openalex.org/I21370196","display_name":"Aristotle University of Thessaloniki","ror":"https://ror.org/02j61yw88","country_code":"GR","type":"education","lineage":["https://openalex.org/I21370196"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Panagiotis Chaourani","raw_affiliation_strings":["Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece","institution_ids":["https://openalex.org/I21370196"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023894427","display_name":"S. Nikolaidis","orcid":"https://orcid.org/0000-0002-9794-8062"},"institutions":[{"id":"https://openalex.org/I21370196","display_name":"Aristotle University of Thessaloniki","ror":"https://ror.org/02j61yw88","country_code":"GR","type":"education","lineage":["https://openalex.org/I21370196"]}],"countries":["GR"],"is_corresponding":false,"raw_author_name":"Spyridon Nikolaidis","raw_affiliation_strings":["Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece","institution_ids":["https://openalex.org/I21370196"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I21370196"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"242","last_page":"245"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.7671676278114319},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.7557258605957031},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7415217757225037},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6898702383041382},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.5832555294036865},{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.5224482417106628},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5019114017486572},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4924079179763794},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3943786323070526},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.36143958568573},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3097136616706848},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2675918638706207},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18731608986854553},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16514074802398682}],"concepts":[{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.7671676278114319},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.7557258605957031},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7415217757225037},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6898702383041382},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.5832555294036865},{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.5224482417106628},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5019114017486572},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4924079179763794},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3943786323070526},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.36143958568573},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3097136616706848},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2675918638706207},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18731608986854553},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16514074802398682},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ddecs.2014.6868799","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ddecs.2014.6868799","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"17th International Symposium on Design and Diagnostics of Electronic Circuits & Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7200000286102295}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1527137186","https://openalex.org/W2090418340","https://openalex.org/W2091881407","https://openalex.org/W2129305518","https://openalex.org/W2154608845","https://openalex.org/W2166109397","https://openalex.org/W6678967884"],"related_works":["https://openalex.org/W1974895211","https://openalex.org/W2129841057","https://openalex.org/W3040712279","https://openalex.org/W2176409448","https://openalex.org/W2364769705","https://openalex.org/W2056136368","https://openalex.org/W2374664672","https://openalex.org/W4367555392","https://openalex.org/W98453623","https://openalex.org/W2340624421"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"a":[3],"new":[4],"analytical":[5],"model":[6],"for":[7,16,27,64],"describing":[8],"the":[9,13,28,58,72],"output":[10],"waveform":[11],"of":[12,46],"CMOS":[14],"inverter":[15],"planar":[17,66],"and":[18,41,67],"FinFET":[19,69],"nanoscale":[20],"technologies,":[21],"is":[22,31],"introduced.":[23],"A":[24],"modified":[25],"expression":[26],"transistor":[29],"current":[30,45],"adopted":[32],"taken":[33],"into":[34],"account":[35],"nano-scale":[36],"effects":[37],"like":[38],"DIBL,":[39],"CLM":[40],"NWE.":[42],"The":[43],"sub-threshold":[44],"both":[47],"transistors":[48],"as":[49,51],"well":[50],"their":[52],"drain-to-bulk":[53],"capacitances,":[54],"which":[55],"influence":[56],"significantly":[57],"accuracy,":[59],"are":[60],"also":[61],"considered.":[62],"Results":[63],"32nm":[65],"20nm":[68],"technologies":[70],"validate":[71],"proposed":[73],"model.":[74]},"counts_by_year":[{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}