{"id":"https://openalex.org/W2939158967","doi":"https://doi.org/10.1109/dcis.2018.8681497","title":"Optimal Accelerated Test Regions for Time- Dependent Dielectric Breakdown Lifetime Parameters Estimation in FinFET Technology","display_name":"Optimal Accelerated Test Regions for Time- Dependent Dielectric Breakdown Lifetime Parameters Estimation in FinFET Technology","publication_year":2018,"publication_date":"2018-11-01","ids":{"openalex":"https://openalex.org/W2939158967","doi":"https://doi.org/10.1109/dcis.2018.8681497","mag":"2939158967"},"language":"en","primary_location":{"id":"doi:10.1109/dcis.2018.8681497","is_oa":false,"landing_page_url":"https://doi.org/10.1109/dcis.2018.8681497","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 Conference on Design of Circuits and Integrated Systems (DCIS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025591564","display_name":"Kexin Yang","orcid":"https://orcid.org/0000-0002-3630-1003"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Kexin Yang","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100422096","display_name":"Rui Zhang","orcid":"https://orcid.org/0000-0002-8273-5769"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Rui Zhang","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014655929","display_name":"Taizhi Liu","orcid":"https://orcid.org/0000-0001-5057-4916"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Taizhi Liu","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100733983","display_name":"Dae-Hyun Kim","orcid":"https://orcid.org/0000-0003-0801-0230"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dae-Hyun Kim","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032107826","display_name":"Linda Milor","orcid":"https://orcid.org/0000-0002-8244-4793"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Linda Milor","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5025591564"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.2575,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.60079687,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.8778027296066284},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6555468440055847},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.6246728301048279},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5799931287765503},{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.5016193389892578},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.4854589104652405},{"id":"https://openalex.org/keywords/test-method","display_name":"Test method","score":0.4654584228992462},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.43364134430885315},{"id":"https://openalex.org/keywords/approximation-error","display_name":"Approximation error","score":0.41899892687797546},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3845825493335724},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3598194122314453},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32980877161026},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3221595585346222},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.30721715092658997},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.21573418378829956},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.18897926807403564},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.1836279332637787},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.14431220293045044},{"id":"https://openalex.org/keywords/statistics","display_name":"Statistics","score":0.12070900201797485},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07825076580047607}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.8778027296066284},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6555468440055847},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.6246728301048279},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5799931287765503},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.5016193389892578},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.4854589104652405},{"id":"https://openalex.org/C132519959","wikidata":"https://www.wikidata.org/wiki/Q3077373","display_name":"Test method","level":2,"score":0.4654584228992462},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.43364134430885315},{"id":"https://openalex.org/C122383733","wikidata":"https://www.wikidata.org/wiki/Q865920","display_name":"Approximation error","level":2,"score":0.41899892687797546},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3845825493335724},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3598194122314453},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32980877161026},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3221595585346222},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.30721715092658997},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.21573418378829956},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.18897926807403564},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.1836279332637787},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.14431220293045044},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.12070900201797485},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07825076580047607},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/dcis.2018.8681497","is_oa":false,"landing_page_url":"https://doi.org/10.1109/dcis.2018.8681497","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 Conference on Design of Circuits and Integrated Systems (DCIS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.699999988079071,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W1532099256","https://openalex.org/W1998810909","https://openalex.org/W2020018978","https://openalex.org/W2032069904","https://openalex.org/W2033768202","https://openalex.org/W2043294426","https://openalex.org/W2043496087","https://openalex.org/W2047631474","https://openalex.org/W2098045174","https://openalex.org/W2107073052","https://openalex.org/W2116960104","https://openalex.org/W2123300395","https://openalex.org/W2136143459","https://openalex.org/W2150056343","https://openalex.org/W2164966443","https://openalex.org/W2170333286","https://openalex.org/W2460271409","https://openalex.org/W2724130738","https://openalex.org/W2731798629","https://openalex.org/W2793395449","https://openalex.org/W2794171470","https://openalex.org/W2803645833","https://openalex.org/W2804152127","https://openalex.org/W2806512482","https://openalex.org/W2885858489","https://openalex.org/W2917856904","https://openalex.org/W4236375101","https://openalex.org/W4243639737","https://openalex.org/W4251383832","https://openalex.org/W6661287525","https://openalex.org/W6680329133"],"related_works":["https://openalex.org/W2019750744","https://openalex.org/W2613535449","https://openalex.org/W2051048385","https://openalex.org/W1995809631","https://openalex.org/W2104699544","https://openalex.org/W2099681566","https://openalex.org/W2162808514","https://openalex.org/W2027836115","https://openalex.org/W2129336955","https://openalex.org/W2132669716"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"a":[3,114],"methodology":[4,58],"to":[5,47],"find":[6,48],"optimal":[7,50,73],"accelerated":[8],"test":[9,51,74],"regions":[10,52,75],"for":[11,15,68],"lifetime":[12,95,127],"parameter":[13,96],"estimation":[14,118],"not":[16],"only":[17],"the":[18,29,49,55,78,84,90,110],"traditional":[19],"reliability":[20],"concern,":[21],"frontend-of-line":[22],"dielectric":[23,37],"breakdown":[24,38],"(FEOL":[25],"TDDB),":[26],"but":[27],"also":[28],"newly":[30],"emerging":[31],"wearout":[32],"mechanism,":[33],"middle-of-line":[34,134],"time":[35],"dependent":[36],"(MOL":[39],"TDDB)":[40],"in":[41,61,89],"14nm":[42],"FinFET":[43],"technology.":[44],"The":[45,72],"framework":[46],"is":[53,59],"introduced;":[54],"error":[56,99,103],"estimating":[57],"discussed":[60],"detail.":[62],"Three":[63],"digital":[64],"circuits":[65],"are":[66],"presented":[67],"evaluation":[69],"and":[70,102],"comparison.":[71],"depend":[76],"on":[77],"circuit":[79],"size":[80],"as":[81,83],"well":[82],"types":[85],"of":[86],"standard":[87],"cells":[88],"circuits.":[91],"To":[92],"ensure":[93],"accurate":[94],"estimation,":[97],"both":[98],"from":[100,104],"sampling":[101],"selectivity":[105],"should":[106],"be":[107,121],"considered":[108],"at":[109,129,136],"same":[111],"time.":[112],"As":[113],"general":[115],"guideline,":[116],"higher":[117,130,137],"accuracy":[119],"will":[120],"achieved":[122],"by":[123],"testing":[124,133],"gate":[125],"TDDB":[126,135],"parameters":[128],"voltages,":[131],"while":[132],"temperatures.":[138]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}