{"id":"https://openalex.org/W3143677618","doi":"https://doi.org/10.1109/date.2010.5457168","title":"Analytical model for TDDB-based performance degradation in combinational logic","display_name":"Analytical model for TDDB-based performance degradation in combinational logic","publication_year":2010,"publication_date":"2010-03-01","ids":{"openalex":"https://openalex.org/W3143677618","doi":"https://doi.org/10.1109/date.2010.5457168","mag":"3143677618"},"language":"en","primary_location":{"id":"doi:10.1109/date.2010.5457168","is_oa":false,"landing_page_url":"https://doi.org/10.1109/date.2010.5457168","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5059471428","display_name":"Mihir Choudhury","orcid":null},"institutions":[{"id":"https://openalex.org/I74775410","display_name":"Rice University","ror":"https://ror.org/008zs3103","country_code":"US","type":"education","lineage":["https://openalex.org/I74775410"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Mihir Choudhury","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Rice University, Houston, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Rice University, Houston, USA","institution_ids":["https://openalex.org/I74775410"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016704219","display_name":"Vikas Chandra","orcid":"https://orcid.org/0009-0005-4996-8455"},"institutions":[{"id":"https://openalex.org/I4210156213","display_name":"American Rock Mechanics Association","ror":"https://ror.org/05vfrxy92","country_code":"US","type":"nonprofit","lineage":["https://openalex.org/I4210156213"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vikas Chandra","raw_affiliation_strings":["ARM Research and Development, San Jose, USA"],"affiliations":[{"raw_affiliation_string":"ARM Research and Development, San Jose, USA","institution_ids":["https://openalex.org/I4210156213"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021693439","display_name":"Kartik Mohanram","orcid":null},"institutions":[{"id":"https://openalex.org/I74775410","display_name":"Rice University","ror":"https://ror.org/008zs3103","country_code":"US","type":"education","lineage":["https://openalex.org/I74775410"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kartik Mohanram","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Rice University, Houston, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Rice University, Houston, USA","institution_ids":["https://openalex.org/I74775410"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110751786","display_name":"Robert Aitken","orcid":null},"institutions":[{"id":"https://openalex.org/I74775410","display_name":"Rice University","ror":"https://ror.org/008zs3103","country_code":"US","type":"education","lineage":["https://openalex.org/I74775410"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert Aitken","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Rice University, Houston, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Rice University, Houston, USA","institution_ids":["https://openalex.org/I74775410"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5059471428"],"corresponding_institution_ids":["https://openalex.org/I74775410"],"apc_list":null,"apc_paid":null,"fwci":3.1751,"has_fulltext":false,"cited_by_count":34,"citation_normalized_percentile":{"value":0.92387453,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"49","issue":null,"first_page":"423","last_page":"428"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.996999979019165,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/time-dependent-gate-oxide-breakdown","display_name":"Time-dependent gate oxide breakdown","score":0.9499421119689941},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6571285724639893},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.6458963751792908},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.618082582950592},{"id":"https://openalex.org/keywords/combinational-logic","display_name":"Combinational logic","score":0.5578064918518066},{"id":"https://openalex.org/keywords/dielectric-strength","display_name":"Dielectric strength","score":0.5459765791893005},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5422398447990417},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5173941850662231},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5148812532424927},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4896681606769562},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4177852272987366},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.29172536730766296},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2855740785598755},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26023632287979126},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.25821250677108765},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.2570788860321045},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1963914930820465},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.11043182015419006}],"concepts":[{"id":"https://openalex.org/C152909973","wikidata":"https://www.wikidata.org/wiki/Q7804816","display_name":"Time-dependent gate oxide breakdown","level":5,"score":0.9499421119689941},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6571285724639893},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.6458963751792908},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.618082582950592},{"id":"https://openalex.org/C81409106","wikidata":"https://www.wikidata.org/wiki/Q76505","display_name":"Combinational logic","level":3,"score":0.5578064918518066},{"id":"https://openalex.org/C70401718","wikidata":"https://www.wikidata.org/wiki/Q343241","display_name":"Dielectric strength","level":3,"score":0.5459765791893005},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5422398447990417},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5173941850662231},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5148812532424927},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4896681606769562},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4177852272987366},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.29172536730766296},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2855740785598755},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26023632287979126},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25821250677108765},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.2570788860321045},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1963914930820465},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.11043182015419006},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/date.2010.5457168","is_oa":false,"landing_page_url":"https://doi.org/10.1109/date.2010.5457168","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1712958038","https://openalex.org/W1923733561","https://openalex.org/W2001894083","https://openalex.org/W2032069904","https://openalex.org/W2070588354","https://openalex.org/W2114840932","https://openalex.org/W2122646436","https://openalex.org/W2125220969","https://openalex.org/W2126232622","https://openalex.org/W2134067926","https://openalex.org/W2145750057","https://openalex.org/W2156003850","https://openalex.org/W2157732684","https://openalex.org/W2163137406","https://openalex.org/W2537423926","https://openalex.org/W6637529790"],"related_works":["https://openalex.org/W2099624314","https://openalex.org/W3160961382","https://openalex.org/W2546473172","https://openalex.org/W3107547302","https://openalex.org/W2392567938","https://openalex.org/W2373803844","https://openalex.org/W2243340867","https://openalex.org/W2210936481","https://openalex.org/W1199668799","https://openalex.org/W2325891409"],"abstract_inverted_index":{"With":[0],"aggressive":[1],"gate":[2,9,19,23],"oxide":[3,10,20,24,99],"scaling,":[4],"latent":[5],"defects":[6],"in":[7,15,46,85,129],"the":[8,39,59,115],"manifest":[11],"as":[12,29,36],"traps":[13],"that,":[14],"time,":[16],"lead":[17],"to":[18,28,57,66,81,119],"breakdown.":[21,100],"Progressive":[22],"breakdown,":[25],"also":[26],"referred":[27],"time-dependent":[30],"dielectric":[31],"breakdown":[32],"(TDDB),":[33],"is":[34,117],"emerging":[35],"one":[37],"of":[38,43,61,93,98,107,122,126],"most":[40],"important":[41],"sources":[42],"performance":[44],"degradation":[45],"nanoscale":[47],"CMOS":[48],"devices.":[49],"This":[50],"paper":[51],"describes":[52],"an":[53,104,108],"accurate":[54,118],"analytical":[55,69],"model":[56,70,116],"predict":[58],"delay":[60],"combinational":[62,87],"logic":[63,88],"gates":[64],"subject":[65],"TDDB.":[67],"The":[68],"can":[71],"be":[72],"seamlessly":[73],"integrated":[74],"into":[75],"a":[76,91],"static":[77],"timing":[78],"analysis":[79],"tool":[80],"analyze":[82],"TDDB":[83],"effects":[84],"large":[86],"circuits":[89],"across":[90],"range":[92],"supply":[94],"voltages":[95],"and":[96],"severity":[97],"Simulation":[101],"results":[102],"for":[103],"early":[105],"version":[106],"industrial":[109],"32":[110],"nm":[111],"library":[112],"show":[113],"that":[114],"within":[120],"3%":[121],"SPICE":[123],"with":[124],"orders":[125],"magnitude":[127],"improvement":[128],"runtime.":[130]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":5},{"year":2012,"cited_by_count":6}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}