{"id":"https://openalex.org/W3140899244","doi":"https://doi.org/10.1109/date.2009.5090694","title":"Impact of voltage scaling on nanoscale SRAM reliability","display_name":"Impact of voltage scaling on nanoscale SRAM reliability","publication_year":2009,"publication_date":"2009-04-01","ids":{"openalex":"https://openalex.org/W3140899244","doi":"https://doi.org/10.1109/date.2009.5090694","mag":"3140899244"},"language":"en","primary_location":{"id":"doi:10.1109/date.2009.5090694","is_oa":false,"landing_page_url":"https://doi.org/10.1109/date.2009.5090694","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Design, Automation &amp; Test in Europe Conference &amp; Exhibition","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5016704219","display_name":"Vikas Chandra","orcid":"https://orcid.org/0009-0005-4996-8455"},"institutions":[{"id":"https://openalex.org/I2801109035","display_name":"ARM (United Kingdom)","ror":"https://ror.org/04mmhzs81","country_code":"GB","type":"company","lineage":["https://openalex.org/I2801109035"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"V. Chandra","raw_affiliation_strings":["ARM R and D, UK"],"affiliations":[{"raw_affiliation_string":"ARM R and D, UK","institution_ids":["https://openalex.org/I2801109035"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112951545","display_name":"R Aitken","orcid":null},"institutions":[{"id":"https://openalex.org/I2801109035","display_name":"ARM (United Kingdom)","ror":"https://ror.org/04mmhzs81","country_code":"GB","type":"company","lineage":["https://openalex.org/I2801109035"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"R. Aitken","raw_affiliation_strings":["ARM R and D, UK"],"affiliations":[{"raw_affiliation_string":"ARM R and D, UK","institution_ids":["https://openalex.org/I2801109035"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5016704219"],"corresponding_institution_ids":["https://openalex.org/I2801109035"],"apc_list":null,"apc_paid":null,"fwci":2.6917,"has_fulltext":false,"cited_by_count":28,"citation_normalized_percentile":{"value":0.90711852,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"387","last_page":"392"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6407936811447144},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5603442788124084},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.4965816140174866},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.48975372314453125},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.47881656885147095},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.47780710458755493},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.47002124786376953},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.46263378858566284},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.45607760548591614},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4388739764690399},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.43703776597976685},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42868319153785706},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.35850679874420166},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.28333601355552673},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.2501181364059448},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23366880416870117},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.15673914551734924}],"concepts":[{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6407936811447144},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5603442788124084},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.4965816140174866},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.48975372314453125},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.47881656885147095},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.47780710458755493},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.47002124786376953},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.46263378858566284},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.45607760548591614},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4388739764690399},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43703776597976685},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42868319153785706},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.35850679874420166},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.28333601355552673},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.2501181364059448},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23366880416870117},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.15673914551734924},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/date.2009.5090694","is_oa":false,"landing_page_url":"https://doi.org/10.1109/date.2009.5090694","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Design, Automation &amp; Test in Europe Conference &amp; Exhibition","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7599999904632568,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1712958038","https://openalex.org/W1923733561","https://openalex.org/W2032069904","https://openalex.org/W2070588354","https://openalex.org/W2102434753","https://openalex.org/W2109458212","https://openalex.org/W2114840932","https://openalex.org/W2119632986","https://openalex.org/W2122646436","https://openalex.org/W2124085954","https://openalex.org/W2124536119","https://openalex.org/W2125220969","https://openalex.org/W2134490163","https://openalex.org/W2154509298","https://openalex.org/W2155051493","https://openalex.org/W2157732684","https://openalex.org/W2160155636","https://openalex.org/W2161549238","https://openalex.org/W2168525368","https://openalex.org/W2537423926","https://openalex.org/W6637529790","https://openalex.org/W6640349510","https://openalex.org/W6676534250"],"related_works":["https://openalex.org/W1500230652","https://openalex.org/W4290647047","https://openalex.org/W2363504003","https://openalex.org/W2066033226","https://openalex.org/W2548582980","https://openalex.org/W2620706469","https://openalex.org/W2052914698","https://openalex.org/W2612883256","https://openalex.org/W4386933833","https://openalex.org/W1030007664"],"abstract_inverted_index":{"Low":[0],"voltage":[1,14,40,117,143],"SRAMs":[2,16,45,57,100],"are":[3,58,81,171],"critical":[4],"for":[5,52],"power":[6],"constrained":[7],"designs.":[8],"Currently,":[9],"the":[10,32,36,42,76,95,105,114,120,151,175,183,191,205,223],"choice":[11,37],"of":[12,38,44,89,99,116,124,174,177,185,193,225],"supply":[13,39],"in":[15,31,104],"is":[17,135,155],"governed":[18],"by":[19],"bit":[20,152],"cell":[21,153],"read":[22],"static":[23],"noise":[24],"margin,":[25],"writability,":[26],"data":[27],"retention":[28],"etc.":[29],"However,":[30],"nanometer":[33,106],"technology":[34,186,206],"nodes,":[35],"impacts":[41],"reliability":[43,50,224],"as":[46],"well.":[47],"Two":[48],"important":[49],"challenges":[51],"current":[53,67],"and":[54,62,79,166,189,198,216],"future":[55],"generation":[56,68],"gate":[59,72,125,132],"oxide":[60,126,133,178],"degradation":[61,134],"soft":[63,96,121],"error":[64,97,122],"susceptibility.":[65],"The":[66],"transistors":[69],"have":[70,112],"ultra-thin":[71],"oxides":[73],"to":[74,83,86,209],"improve":[75],"device":[77],"performance":[78],"they":[80],"prone":[82],"breakdown":[84],"due":[85],"higher":[87],"level":[88,176],"electric":[90],"field":[91],"stress.":[92],"In":[93,108],"addition,":[94],"susceptibility":[98,123],"has":[101],"significantly":[102,221],"increased":[103],"regime.":[107],"this":[109],"work,":[110],"we":[111,158,181],"quantified":[113],"impact":[115,184],"scaling":[118,188],"on":[119],"degraded":[127],"SRAMs.We":[128],"show":[129,159],"that":[130,160],"when":[131],"taken":[136],"into":[137],"account,":[138],"there":[139],"exists":[140],"an":[141],"optimal":[142],"(V":[144],"<sub":[145,163,168,195,200,213],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[146,164,169,196,201,214],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">opt</sub>":[147,165,197,215],")":[148],"at":[149],"which":[150],"Qcrit":[154,167,199],"maximized.":[156],"Further,":[157],"both":[161,211],"V":[162,194,212],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">max</sub>":[170,202],"a":[172],"function":[173],"degradation.":[179],"Finally,":[180],"investigate":[182],"node":[187,207],"analyze":[190],"trend":[192],".":[203],"As":[204],"shrinks":[208],"sub-45nm,":[210],"Qcritmax":[217],"decrease":[218],"sharply,":[219],"thus":[220],"decreasing":[222],"SRAMs.":[226]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":5}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}