{"id":"https://openalex.org/W4386764212","doi":"https://doi.org/10.1109/dac56929.2023.10247975","title":"In-Memory Neural Network Accelerator based on eDRAM Cell with Enhanced Retention Time","display_name":"In-Memory Neural Network Accelerator based on eDRAM Cell with Enhanced Retention Time","publication_year":2023,"publication_date":"2023-07-09","ids":{"openalex":"https://openalex.org/W4386764212","doi":"https://doi.org/10.1109/dac56929.2023.10247975"},"language":"en","primary_location":{"id":"doi:10.1109/dac56929.2023.10247975","is_oa":false,"landing_page_url":"https://doi.org/10.1109/dac56929.2023.10247975","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 60th ACM/IEEE Design Automation Conference (DAC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5080096036","display_name":"Inhwan Lee","orcid":"https://orcid.org/0000-0002-1544-8305"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Inhwan Lee","raw_affiliation_strings":["Pohang University of Science and Technology,Pohang,Korea","Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology,Pohang,Korea","institution_ids":["https://openalex.org/I123900574"]},{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039908685","display_name":"Eunhwan Kim","orcid":"https://orcid.org/0009-0004-4304-0958"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Eunhwan Kim","raw_affiliation_strings":["Pohang University of Science and Technology,Pohang,Korea","Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology,Pohang,Korea","institution_ids":["https://openalex.org/I123900574"]},{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044606574","display_name":"Nameun Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Nameun Kang","raw_affiliation_strings":["Pohang University of Science and Technology,Pohang,Korea","Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology,Pohang,Korea","institution_ids":["https://openalex.org/I123900574"]},{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004988543","display_name":"Hyunmyung Oh","orcid":"https://orcid.org/0000-0003-1392-9364"},"institutions":[{"id":"https://openalex.org/I123900574","display_name":"Pohang University of Science and Technology","ror":"https://ror.org/04xysgw12","country_code":"KR","type":"education","lineage":["https://openalex.org/I123900574"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyunmyung Oh","raw_affiliation_strings":["Pohang University of Science and Technology,Pohang,Korea","Pohang University of Science and Technology, Pohang, Korea"],"affiliations":[{"raw_affiliation_string":"Pohang University of Science and Technology,Pohang,Korea","institution_ids":["https://openalex.org/I123900574"]},{"raw_affiliation_string":"Pohang University of Science and Technology, Pohang, Korea","institution_ids":["https://openalex.org/I123900574"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5003219699","display_name":"Jae\u2010Joon Kim","orcid":"https://orcid.org/0000-0001-5175-8258"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae-Joon Kim","raw_affiliation_strings":["Seoul National University,Seoul,Korea","Seoul National University, Seoul, Korea"],"affiliations":[{"raw_affiliation_string":"Seoul National University,Seoul,Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"Seoul National University, Seoul, Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5080096036"],"corresponding_institution_ids":["https://openalex.org/I123900574"],"apc_list":null,"apc_paid":null,"fwci":0.6643,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.68882961,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.7464354634284973},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7067623138427734},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6108971834182739},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4897048771381378},{"id":"https://openalex.org/keywords/capacitive-coupling","display_name":"Capacitive coupling","score":0.47997426986694336},{"id":"https://openalex.org/keywords/artificial-neural-network","display_name":"Artificial neural network","score":0.46997350454330444},{"id":"https://openalex.org/keywords/retention-time","display_name":"Retention time","score":0.42044132947921753},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.4127545952796936},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3887854814529419},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3753034770488739},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.279179185628891},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2133425772190094},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21313509345054626},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2013464868068695},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.07404237985610962}],"concepts":[{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.7464354634284973},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7067623138427734},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6108971834182739},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4897048771381378},{"id":"https://openalex.org/C68278764","wikidata":"https://www.wikidata.org/wiki/Q444167","display_name":"Capacitive coupling","level":3,"score":0.47997426986694336},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.46997350454330444},{"id":"https://openalex.org/C3020018676","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Retention time","level":2,"score":0.42044132947921753},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.4127545952796936},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3887854814529419},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3753034770488739},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.279179185628891},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2133425772190094},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21313509345054626},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2013464868068695},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.07404237985610962},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/dac56929.2023.10247975","is_oa":false,"landing_page_url":"https://doi.org/10.1109/dac56929.2023.10247975","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 60th ACM/IEEE Design Automation Conference (DAC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2002293402","https://openalex.org/W2070905822","https://openalex.org/W2161091390","https://openalex.org/W2971738511","https://openalex.org/W2998187558","https://openalex.org/W3026786299","https://openalex.org/W3135701542","https://openalex.org/W3184281067","https://openalex.org/W3185238080","https://openalex.org/W3210245573","https://openalex.org/W6802489415"],"related_works":["https://openalex.org/W2143400404","https://openalex.org/W2023834321","https://openalex.org/W2801267388","https://openalex.org/W2807138148","https://openalex.org/W1785301911","https://openalex.org/W1869904472","https://openalex.org/W4295791092","https://openalex.org/W2109360204","https://openalex.org/W2098745936","https://openalex.org/W2936288193"],"abstract_inverted_index":{"Logic":[0],"compatible":[1],"eDRAM":[2,65,83],"cell-based":[3],"computing-in-memory":[4],"(CIM)":[5],"neural":[6,16],"network":[7,17],"accelerators":[8,37],"have":[9],"been":[10],"actively":[11],"studied":[12],"as":[13],"an":[14],"energy-efficient":[15],"computing":[18],"platform":[19],"thanks":[20],"to":[21,31,87,93],"their":[22],"small":[23],"cell":[24,66,84],"size":[25],"and":[26,50],"low":[27],"static":[28],"power":[29],"compared":[30,92],"SRAM.":[32],"However,":[33],"previous":[34,75],"eDRAM-based":[35],"CIM":[36],"suffer":[38],"from":[39],"significant":[40],"accuracy":[41],"degradation":[42],"caused":[43],"by":[44],"process,":[45],"voltage,":[46],"temperature":[47],"(PVT)":[48],"variations":[49],"short":[51],"retention":[52,72,90],"time.":[53],"To":[54],"overcome":[55],"the":[56,81,94],"issues,":[57],"we":[58],"introduce":[59],"a":[60,69],"PVT-variation":[61],"tolerant":[62],"capacitive":[63],"coupling-based":[64],"that":[67,80],"has":[68,85],"much":[70],"longer":[71],"time":[73,91],"than":[74],"works.":[76],"Simulation":[77],"results":[78],"show":[79],"proposed":[82],"up":[86],"50\u00d7":[88],"higher":[89],"state-of-the-art":[95],"designs.":[96]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1}],"updated_date":"2026-03-12T08:34:05.389933","created_date":"2025-10-10T00:00:00"}