{"id":"https://openalex.org/W2006122782","doi":"https://doi.org/10.1109/conielecomp.2013.6525777","title":"Using the EKV model to describe the DC operation in weak inversion of the multiple-input FGMOS transistor","display_name":"Using the EKV model to describe the DC operation in weak inversion of the multiple-input FGMOS transistor","publication_year":2013,"publication_date":"2013-03-01","ids":{"openalex":"https://openalex.org/W2006122782","doi":"https://doi.org/10.1109/conielecomp.2013.6525777","mag":"2006122782"},"language":"en","primary_location":{"id":"doi:10.1109/conielecomp.2013.6525777","is_oa":false,"landing_page_url":"https://doi.org/10.1109/conielecomp.2013.6525777","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"CONIELECOMP 2013, 23rd International Conference on Electronics, Communications and Computing","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058327693","display_name":"S. Rios-Salcedo","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"S. Rios-Salcedo","raw_affiliation_strings":["CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]},{"raw_affiliation_string":"Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110048803","display_name":"A. S. Medina\u2010Vazquez","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"A. S. Medina-Vazquez","raw_affiliation_strings":["CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]},{"raw_affiliation_string":"Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057166947","display_name":"C. Davila-Saldivar","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"C. Davila-Saldivar","raw_affiliation_strings":["CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]},{"raw_affiliation_string":"Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5004710549","display_name":"Marco A. Gurrola-Navarro","orcid":"https://orcid.org/0000-0001-8446-7764"},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"M. A. Gurrola-Navarro","raw_affiliation_strings":["CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"CUCEI, Electronics Departament, Universidad de Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]},{"raw_affiliation_string":"Electron. Dept., Univ. de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5058327693"],"corresponding_institution_ids":["https://openalex.org/I193181351"],"apc_list":null,"apc_paid":null,"fwci":0.2364,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.58928746,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"154","last_page":"157"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7934890985488892},{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.6818647384643555},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5951787233352661},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5835591554641724},{"id":"https://openalex.org/keywords/inversion","display_name":"Inversion (geology)","score":0.5450693368911743},{"id":"https://openalex.org/keywords/analogue-electronics","display_name":"Analogue electronics","score":0.5240371823310852},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5144743919372559},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.49154266715049744},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3211434781551361},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23754310607910156},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0808531641960144}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7934890985488892},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.6818647384643555},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5951787233352661},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5835591554641724},{"id":"https://openalex.org/C1893757","wikidata":"https://www.wikidata.org/wiki/Q3653001","display_name":"Inversion (geology)","level":3,"score":0.5450693368911743},{"id":"https://openalex.org/C29074008","wikidata":"https://www.wikidata.org/wiki/Q174925","display_name":"Analogue electronics","level":3,"score":0.5240371823310852},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5144743919372559},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.49154266715049744},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3211434781551361},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23754310607910156},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0808531641960144},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C109007969","wikidata":"https://www.wikidata.org/wiki/Q749565","display_name":"Structural basin","level":2,"score":0.0},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/conielecomp.2013.6525777","is_oa":false,"landing_page_url":"https://doi.org/10.1109/conielecomp.2013.6525777","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"CONIELECOMP 2013, 23rd International Conference on Electronics, Communications and Computing","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320321739","display_name":"Consejo Nacional de Ciencia y Tecnolog\u00eda","ror":"https://ror.org/059ex5q34"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2079826846","https://openalex.org/W2160142098","https://openalex.org/W2166288744"],"related_works":["https://openalex.org/W2965295431","https://openalex.org/W2254931227","https://openalex.org/W4319440797","https://openalex.org/W1980470275","https://openalex.org/W2225406648","https://openalex.org/W2086322839","https://openalex.org/W2375192119","https://openalex.org/W2172415194","https://openalex.org/W2588091141","https://openalex.org/W2153858402"],"abstract_inverted_index":{"The":[0,83],"Floating":[1],"Gate":[2],"MOS":[3,20],"Transistor":[4],"with":[5,15],"Multiple":[6],"Inputs":[7],"is":[8,26,47,81,98,120,127],"a":[9,27,59,87],"device":[10,46,96],"that":[11],"offers":[12],"some":[13],"advantages":[14],"regard":[16],"to":[17],"the":[18,35,39,63,69,75,78,92,116,131],"conventional":[19],"transistor.":[21],"However,":[22],"even":[23],"today,":[24],"there":[25],"lack":[28],"of":[29,44,77,94,102,133],"formal":[30],"and":[31],"detailed":[32],"analysis":[33],"about":[34],"analog":[36,54,111,138],"model":[37,43,80,97],"in":[38,68,74],"literature.":[40],"An":[41],"accurate":[42],"this":[45,57,95,124],"very":[48,106],"important":[49],"for":[50,61,85,108,130,137],"designing":[51],"high":[52,109],"performance":[53,110],"cells.":[55],"In":[56],"document":[58],"strategy":[60],"modeling":[62,93,103,125],"floating":[64],"gate":[65],"transistor":[66,117],"operating":[67],"weak":[70],"inversion":[71],"region":[72],"based":[73],"adaptation":[76],"EKV":[79],"proposed.":[82],"basis":[84],"developing":[86],"complete":[88],"theory":[89],"which":[90],"allows":[91],"introduced.":[99],"This":[100],"type":[101],"can":[104],"be":[105],"useful":[107,129],"integrated":[112],"circuits":[113,139],"designers":[114],"where":[115],"concerned":[118],"here":[119],"strongly":[121],"recommended.":[122],"Further,":[123],"process":[126],"also":[128],"development":[132],"new":[134],"computational":[135],"tools":[136],"simulation.":[140]},"counts_by_year":[{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}