{"id":"https://openalex.org/W1976822381","doi":"https://doi.org/10.1109/cicc.2014.6946002","title":"Reliability modeling of HK MG technologies","display_name":"Reliability modeling of HK MG technologies","publication_year":2014,"publication_date":"2014-09-01","ids":{"openalex":"https://openalex.org/W1976822381","doi":"https://doi.org/10.1109/cicc.2014.6946002","mag":"1976822381"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2014.6946002","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2014.6946002","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2014 Custom Integrated Circuits Conference","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109073494","display_name":"Tanya Nigam","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Tanya Nigam","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA 95050"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA 95050","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5091344436","display_name":"A. Kerber","orcid":"https://orcid.org/0000-0002-8753-873X"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andreas Kerber","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta NY, 12020","GLOBALFOUNDRIES, Malta, NY 12020"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta NY, 12020","institution_ids":["https://openalex.org/I35662394"]},{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY 12020","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.4079,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.47513474,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"98","issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6033011674880981},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5753501057624817},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.5484828948974609},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5000667572021484},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4931046664714813},{"id":"https://openalex.org/keywords/stack","display_name":"Stack (abstract data type)","score":0.46245312690734863},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41526883840560913},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40386852622032166},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3991445302963257},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.27700692415237427},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2673172056674957},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.12589094042778015},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10944095253944397},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.10847702622413635}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6033011674880981},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5753501057624817},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.5484828948974609},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5000667572021484},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4931046664714813},{"id":"https://openalex.org/C9395851","wikidata":"https://www.wikidata.org/wiki/Q177929","display_name":"Stack (abstract data type)","level":2,"score":0.46245312690734863},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41526883840560913},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40386852622032166},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3991445302963257},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.27700692415237427},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2673172056674957},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.12589094042778015},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10944095253944397},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.10847702622413635},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2014.6946002","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2014.6946002","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2014 Custom Integrated Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W196480767","https://openalex.org/W1486555480","https://openalex.org/W1927997555","https://openalex.org/W1972523103","https://openalex.org/W1984543154","https://openalex.org/W1988922865","https://openalex.org/W2001894083","https://openalex.org/W2025256982","https://openalex.org/W2029756691","https://openalex.org/W2053674573","https://openalex.org/W2059435272","https://openalex.org/W2062874667","https://openalex.org/W2066283267","https://openalex.org/W2068388649","https://openalex.org/W2069362588","https://openalex.org/W2094144417","https://openalex.org/W2094642598","https://openalex.org/W2103726685","https://openalex.org/W2112542663","https://openalex.org/W2114648586","https://openalex.org/W2134203846","https://openalex.org/W2143634842","https://openalex.org/W2159666080","https://openalex.org/W2160948012","https://openalex.org/W2166019732","https://openalex.org/W2171540755","https://openalex.org/W2173999255","https://openalex.org/W6607928285","https://openalex.org/W6673703536"],"related_works":["https://openalex.org/W2380576232","https://openalex.org/W2937054111","https://openalex.org/W2066223521","https://openalex.org/W2013178899","https://openalex.org/W373327546","https://openalex.org/W2321534397","https://openalex.org/W3014521742","https://openalex.org/W2058958858","https://openalex.org/W2895652696","https://openalex.org/W4327744209"],"abstract_inverted_index":{"It":[0],"has":[1],"been":[2],"demonstrated":[3],"that":[4],"the":[5,14,25,34,55,69,73,77],"introduction":[6,26],"of":[7,27,37,57,76],"HfO2gate":[8,64],"stacks":[9],"into":[10,33],"CMOS":[11],"technologies":[12],"provides":[13],"means":[15],"to":[16,72],"continue":[17],"with":[18],"traditional":[19],"device":[20],"gate":[21,31,35],"length":[22],"scaling.":[23,85],"However,":[24],"HfO2as":[28],"a":[29],"new":[30,41],"dielectric":[32,79],"stack":[36],"FETs":[38],"brings":[39],"about":[40],"challenges":[42],"for":[43,83],"understanding":[44],"reliability":[45],"physics":[46],"and":[47,60,80],"qualification.":[48],"This":[49,66],"review":[50],"summarizes":[51],"recent":[52],"advances":[53],"in":[54,63],"modeling":[56],"charge":[58],"trapping":[59],"defect":[61],"generation":[62],"stacks.":[65],"paper":[67],"relates":[68],"electrical":[70],"properties":[71,75],"chemical/physical":[74],"high-\u03ba":[78],"discusses":[81],"implication":[82],"technology":[84]},"counts_by_year":[{"year":2020,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}