{"id":"https://openalex.org/W2068721296","doi":"https://doi.org/10.1109/cicc.2013.6658544","title":"Detection of early-life failures in high-K metal-gate transistors and ultra low-K inter-metal dielectrics","display_name":"Detection of early-life failures in high-K metal-gate transistors and ultra low-K inter-metal dielectrics","publication_year":2013,"publication_date":"2013-09-01","ids":{"openalex":"https://openalex.org/W2068721296","doi":"https://doi.org/10.1109/cicc.2013.6658544","mag":"2068721296"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2013.6658544","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2013.6658544","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2013 Custom Integrated Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055211028","display_name":"Young Moon Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Young Moon Kim","raw_affiliation_strings":["Dept. of Electrical Engineering, Stanford University, Stanford, CA, USA","[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering, Stanford University, Stanford, CA, USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]","institution_ids":["https://openalex.org/I97018004"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039958474","display_name":"Jun Seomun","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jun Seomun","raw_affiliation_strings":["Design Technology Team, Samsung Electronics, Kiheung, Korea","Syst. LSI Div., Samsung Electron., Kiheung, South Korea"],"affiliations":[{"raw_affiliation_string":"Design Technology Team, Samsung Electronics, Kiheung, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst. LSI Div., Samsung Electron., Kiheung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075366309","display_name":"Hyung-Ock Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyung-Ock Kim","raw_affiliation_strings":["Design Technology Team, Samsung Electronics, Kiheung, Korea","Syst. LSI Div., Samsung Electron., Kiheung, South Korea"],"affiliations":[{"raw_affiliation_string":"Design Technology Team, Samsung Electronics, Kiheung, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst. LSI Div., Samsung Electron., Kiheung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002195641","display_name":"Kyung-Tae Do","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyung-Tae Do","raw_affiliation_strings":["Design Technology Team, Samsung Electronics, Kiheung, Korea","Syst. LSI Div., Samsung Electron., Kiheung, South Korea"],"affiliations":[{"raw_affiliation_string":"Design Technology Team, Samsung Electronics, Kiheung, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst. LSI Div., Samsung Electron., Kiheung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102199095","display_name":"Jung Yun Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jung Yun Choi","raw_affiliation_strings":["Design Technology Team, Samsung Electronics, Kiheung, Korea","Syst. LSI Div., Samsung Electron., Kiheung, South Korea"],"affiliations":[{"raw_affiliation_string":"Design Technology Team, Samsung Electronics, Kiheung, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst. LSI Div., Samsung Electron., Kiheung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028017891","display_name":"Kee Sup Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kee Sup Kim","raw_affiliation_strings":["Design Technology Team, Samsung Electronics, Kiheung, Korea","Syst. LSI Div., Samsung Electron., Kiheung, South Korea"],"affiliations":[{"raw_affiliation_string":"Design Technology Team, Samsung Electronics, Kiheung, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst. LSI Div., Samsung Electron., Kiheung, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111203264","display_name":"Matthias Sauer","orcid":null},"institutions":[{"id":"https://openalex.org/I161046081","display_name":"University of Freiburg","ror":"https://ror.org/0245cg223","country_code":"DE","type":"education","lineage":["https://openalex.org/I161046081"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Matthias Sauer","raw_affiliation_strings":["Dept. of Computer Science, University of Freiburg, Freiburg, Germany","Department of Computer Science , University of Freiburg , Freiburg, Germany"],"affiliations":[{"raw_affiliation_string":"Dept. of Computer Science, University of Freiburg, Freiburg, Germany","institution_ids":["https://openalex.org/I161046081"]},{"raw_affiliation_string":"Department of Computer Science , University of Freiburg , Freiburg, Germany","institution_ids":["https://openalex.org/I161046081"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038861833","display_name":"Bernd Becker","orcid":"https://orcid.org/0000-0003-4031-3258"},"institutions":[{"id":"https://openalex.org/I161046081","display_name":"University of Freiburg","ror":"https://ror.org/0245cg223","country_code":"DE","type":"education","lineage":["https://openalex.org/I161046081"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Bernd Becker","raw_affiliation_strings":["Dept. of Computer Science, University of Freiburg, Freiburg, Germany","Department of Computer Science , University of Freiburg , Freiburg, Germany"],"affiliations":[{"raw_affiliation_string":"Dept. of Computer Science, University of Freiburg, Freiburg, Germany","institution_ids":["https://openalex.org/I161046081"]},{"raw_affiliation_string":"Department of Computer Science , University of Freiburg , Freiburg, Germany","institution_ids":["https://openalex.org/I161046081"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036312663","display_name":"Subhasish Mitra","orcid":"https://orcid.org/0000-0002-5572-5194"},"institutions":[{"id":"https://openalex.org/I97018004","display_name":"Stanford University","ror":"https://ror.org/00f54p054","country_code":"US","type":"education","lineage":["https://openalex.org/I97018004"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Subhasish Mitra","raw_affiliation_strings":["Dept. of Computer Science, Stanford University, Stanford, CA, USA","[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]"],"affiliations":[{"raw_affiliation_string":"Dept. of Computer Science, Stanford University, Stanford, CA, USA","institution_ids":["https://openalex.org/I97018004"]},{"raw_affiliation_string":"[Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA]","institution_ids":["https://openalex.org/I97018004"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5055211028"],"corresponding_institution_ids":["https://openalex.org/I97018004"],"apc_list":null,"apc_paid":null,"fwci":0.7094,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.75102117,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.69573974609375},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6677352786064148},{"id":"https://openalex.org/keywords/redundancy","display_name":"Redundancy (engineering)","score":0.6550186276435852},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5904257297515869},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5377882122993469},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5017745494842529},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4980902671813965},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.4942646026611328},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4696829915046692},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42488521337509155},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.39733606576919556},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.363192617893219},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.35515525937080383},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2733076214790344},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23543593287467957},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11736705899238586},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.0955667793750763}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.69573974609375},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6677352786064148},{"id":"https://openalex.org/C152124472","wikidata":"https://www.wikidata.org/wiki/Q1204361","display_name":"Redundancy (engineering)","level":2,"score":0.6550186276435852},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5904257297515869},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5377882122993469},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5017745494842529},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4980902671813965},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.4942646026611328},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4696829915046692},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42488521337509155},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.39733606576919556},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.363192617893219},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.35515525937080383},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2733076214790344},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23543593287467957},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11736705899238586},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0955667793750763},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2013.6658544","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2013.6658544","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2013 Custom Integrated Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1719980635","https://openalex.org/W1911029421","https://openalex.org/W2015917466","https://openalex.org/W2018030332","https://openalex.org/W2035960619","https://openalex.org/W2061946964","https://openalex.org/W2066698193","https://openalex.org/W2077426659","https://openalex.org/W2081065829","https://openalex.org/W2081714388","https://openalex.org/W2099828501","https://openalex.org/W2102480715","https://openalex.org/W2102969696","https://openalex.org/W2103957451","https://openalex.org/W2107495488","https://openalex.org/W2122819799","https://openalex.org/W2124749186","https://openalex.org/W2125169487","https://openalex.org/W2127913861","https://openalex.org/W2133309037","https://openalex.org/W2135335377","https://openalex.org/W2135802341","https://openalex.org/W2139286506","https://openalex.org/W2156749776","https://openalex.org/W2164529645","https://openalex.org/W2169061104","https://openalex.org/W2171156763","https://openalex.org/W4237087767","https://openalex.org/W6640006728","https://openalex.org/W6675837356"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W4386230336","https://openalex.org/W4306968100","https://openalex.org/W2053668343","https://openalex.org/W2171986175","https://openalex.org/W1933211537","https://openalex.org/W2895652696","https://openalex.org/W4327744209"],"abstract_inverted_index":{"Using":[0],"28nm":[1],"test":[2,73],"chips,":[3],"we":[4],"derive":[5],"signatures":[6,27],"for":[7],"early-life":[8],"failures":[9],"(ELF)":[10],"in":[11,47],"both":[12],"high-K/metal-gate":[13],"transistors":[14],"and":[15],"ultra":[16],"low-K":[17],"inter-metal":[18],"dielectrics.":[19],"We":[20],"also":[21],"demonstrate":[22],"that":[23],"the":[24],"derived":[25],"ELF":[26,52,69],"can":[28,39],"be":[29,40],"successfully":[30],"detected":[31],"using":[32],"a":[33],"clock":[34],"control":[35],"technique.":[36],"Our":[37],"results":[38],"utilized":[41],"to":[42],"overcome":[43],"scaled-CMOS":[44],"reliability":[45],"challenges":[46],"several":[48],"ways:":[49],"1.":[50],"Low-cost":[51],"detection":[53,65],"during":[54,71],"on-line":[55],"operation":[56],"of":[57],"robust":[58],"systems":[59],"without":[60],"requiring":[61],"expensive":[62],"redundancy-based":[63],"error":[64],"techniques;":[66],"2.":[67],"Effective":[68],"screening":[70],"production":[72],"while":[74],"reducing":[75],"stress":[76,79,83],"time":[77],"and/or":[78],"levels":[80],"associated":[81],"with":[82],"tests":[84],"such":[85],"as":[86],"burn-in.":[87]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}