{"id":"https://openalex.org/W2040864640","doi":"https://doi.org/10.1109/cicc.2010.5617440","title":"Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistor","display_name":"Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistor","publication_year":2010,"publication_date":"2010-09-01","ids":{"openalex":"https://openalex.org/W2040864640","doi":"https://doi.org/10.1109/cicc.2010.5617440","mag":"2040864640"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2010.5617440","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2010.5617440","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Custom Integrated Circuits Conference 2010","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110178896","display_name":"Kentaro Honda","orcid":null},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Kentaro Honda","raw_affiliation_strings":["University of Tokyo, Tokyo, Japan","University of Tokyo, , Japan"],"affiliations":[{"raw_affiliation_string":"University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"University of Tokyo, , Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103441049","display_name":"Kousuke Miyaji","orcid":null},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kousuke Miyaji","raw_affiliation_strings":["University of Tokyo, Tokyo, Japan","University of Tokyo, , Japan"],"affiliations":[{"raw_affiliation_string":"University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"University of Tokyo, , Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030358122","display_name":"Shuhei Tanakamaru","orcid":null},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shuhei Tanakamaru","raw_affiliation_strings":["University of Tokyo, Tokyo, Japan","University of Tokyo, , Japan"],"affiliations":[{"raw_affiliation_string":"University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"University of Tokyo, , Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103578844","display_name":"Shinji Miyano","orcid":null},"institutions":[{"id":"https://openalex.org/I4210125918","display_name":"Semiconductor Energy Laboratory (Japan)","ror":"https://ror.org/02vszc135","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210125918"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinji Miyano","raw_affiliation_strings":["Semiconductor Technology Academic Research Center, Yokohama, Japan","Semiconductor Technology Academic Research Center (STARC), Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Technology Academic Research Center, Yokohama, Japan","institution_ids":["https://openalex.org/I4210125918"]},{"raw_affiliation_string":"Semiconductor Technology Academic Research Center (STARC), Yokohama, Japan","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032914719","display_name":"Ken Takeuchi","orcid":"https://orcid.org/0000-0002-9345-6503"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ken Takeuchi","raw_affiliation_strings":["University of Tokyo, Tokyo, Japan","University of Tokyo, , Japan"],"affiliations":[{"raw_affiliation_string":"University of Tokyo, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"University of Tokyo, , Japan","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5110178896"],"corresponding_institution_ids":["https://openalex.org/I74801974"],"apc_list":null,"apc_paid":null,"fwci":2.6469,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.90174193,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"110","issue":"344","first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9164944887161255},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.666731595993042},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.563217043876648},{"id":"https://openalex.org/keywords/margin","display_name":"Margin (machine learning)","score":0.5309951305389404},{"id":"https://openalex.org/keywords/scheme","display_name":"Scheme (mathematics)","score":0.4979996681213379},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4868163764476776},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.43321722745895386},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.38113635778427124},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.27185481786727905},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2562072277069092},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2179645299911499},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18366682529449463},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.09751167893409729},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09646949172019958}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9164944887161255},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.666731595993042},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.563217043876648},{"id":"https://openalex.org/C774472","wikidata":"https://www.wikidata.org/wiki/Q6760393","display_name":"Margin (machine learning)","level":2,"score":0.5309951305389404},{"id":"https://openalex.org/C77618280","wikidata":"https://www.wikidata.org/wiki/Q1155772","display_name":"Scheme (mathematics)","level":2,"score":0.4979996681213379},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4868163764476776},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.43321722745895386},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.38113635778427124},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.27185481786727905},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2562072277069092},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2179645299911499},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18366682529449463},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.09751167893409729},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09646949172019958},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/cicc.2010.5617440","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2010.5617440","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Custom Integrated Circuits Conference 2010","raw_type":"proceedings-article"},{"id":"mag:2639532838","is_oa":false,"landing_page_url":"https://www.ieice.org/ken/paper/20101216v02F/eng/","pdf_url":null,"source":{"id":"https://openalex.org/S4306512848","display_name":"IEICE Technical Report; IEICE Tech. Rep.","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":null,"raw_source_name":"IEICE Technical Report; IEICE Tech. Rep.","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2145602424","https://openalex.org/W2168101540","https://openalex.org/W3157415316","https://openalex.org/W4248956746","https://openalex.org/W4365799988"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2012045996","https://openalex.org/W3024050170","https://openalex.org/W2109451123","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W2967161359","https://openalex.org/W4308090481","https://openalex.org/W3211992815","https://openalex.org/W1559639976"],"abstract_inverted_index":{"8T-SRAM":[0,41,74],"cell":[1,42,75],"with":[2,55,76,127],"asymmetric":[3],"pass":[4],"gate":[5],"transistor":[6],"by":[7,64,108],"local":[8,57],"electron":[9,21],"injection":[10,22,26,32,81],"is":[11,83],"proposed":[12,73,102,118],"to":[13,86],"solve":[14,87],"half":[15,92],"select":[16,93],"disturb.":[17],"Two":[18],"types":[19],"of":[20,90],"scheme:":[23],"both":[24],"side":[25,31,80],"scheme":[27,33,82,119],"and":[28,43,97],"self-repair":[29,78],"one":[30,79],"are":[34],"analyzed":[35],"comprehensively":[36],"for":[37,45],"65nm":[38],"technology":[39],"node":[40],"also":[44],"6T-SRAM":[46,54],"cell.":[47],"This":[48],"paper":[49],"shows":[50],"that":[51],"in":[52],"the":[53,56,60,72,77,88,91,101,104,128],"injected":[58],"electrons":[59],"read":[61,98,114],"speed":[62,115],"degrades":[63],"as":[65,67],"much":[66],"6.3":[68],"times.":[69],"In":[70,100],"contrast,":[71],"most":[84],"suitable":[85],"conflict":[89],"disturb,":[94],"write":[95,111],"disturb":[96,105],"speed.":[99],"8T-SRAM,":[103],"margin":[106,112],"increases":[107],"141%":[109],"without":[110],"or":[113,123],"degradation.":[116],"The":[117],"has":[120],"no":[121],"process":[122],"area":[124],"penalty":[125],"compared":[126],"standard":[129],"CMOS-process":[130],"8T-SRAM.":[131]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":5}],"updated_date":"2026-04-05T17:49:38.594831","created_date":"2025-10-10T00:00:00"}