{"id":"https://openalex.org/W2125983607","doi":"https://doi.org/10.1109/cicc.2009.5280839","title":"High voltage devices in advanced CMOS technologies","display_name":"High voltage devices in advanced CMOS technologies","publication_year":2009,"publication_date":"2009-09-01","ids":{"openalex":"https://openalex.org/W2125983607","doi":"https://doi.org/10.1109/cicc.2009.5280839","mag":"2125983607"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2009.5280839","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2009.5280839","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE Custom Integrated Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5110991989","display_name":"R.A. Bianchi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"R. A. Bianchi","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007782225","display_name":"C. Raynaud","orcid":"https://orcid.org/0000-0001-7913-6653"},"institutions":[{"id":"https://openalex.org/I4210150049","display_name":"Laboratoire d'\u00c9lectronique des Technologies de l'Information","ror":"https://ror.org/04mf0wv34","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I2738703131","https://openalex.org/I4210117989","https://openalex.org/I4210150049"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I2738703131","display_name":"Commissariat \u00e0 l'\u00c9nergie Atomique et aux \u00c9nergies Alternatives","ror":"https://ror.org/00jjx8s55","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131"]},{"id":"https://openalex.org/I3020098449","display_name":"CEA Grenoble","ror":"https://ror.org/02mg6n827","country_code":"FR","type":"government","lineage":["https://openalex.org/I2738703131","https://openalex.org/I3020098449"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Raynaud","raw_affiliation_strings":["CEA-LETI, Grenoble, France","STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"CEA-LETI, Grenoble, France","institution_ids":["https://openalex.org/I4210150049","https://openalex.org/I3020098449","https://openalex.org/I2738703131"]},{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083326734","display_name":"F. Blanchet","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Blanchet","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085479051","display_name":"F. Monsieur","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Monsieur","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5022174235","display_name":"O. Noblanc","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"O. Noblanc","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5110991989"],"corresponding_institution_ids":["https://openalex.org/I4210104693"],"apc_list":null,"apc_paid":null,"fwci":1.7945,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.86070797,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"363","last_page":"370"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.880410373210907},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5604168772697449},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5283216834068298},{"id":"https://openalex.org/keywords/baseband","display_name":"Baseband","score":0.5145577788352966},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5048921704292297},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.44257181882858276},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4207462668418884},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4149002432823181},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34493547677993774},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.33312365412712097},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.31448274850845337},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2112434208393097},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.18278434872627258},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06413903832435608}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.880410373210907},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5604168772697449},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5283216834068298},{"id":"https://openalex.org/C65165936","wikidata":"https://www.wikidata.org/wiki/Q575784","display_name":"Baseband","level":3,"score":0.5145577788352966},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5048921704292297},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.44257181882858276},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4207462668418884},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4149002432823181},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34493547677993774},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.33312365412712097},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.31448274850845337},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2112434208393097},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.18278434872627258},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06413903832435608},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2009.5280839","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2009.5280839","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE Custom Integrated Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1601087262","https://openalex.org/W1978055712","https://openalex.org/W1987959016","https://openalex.org/W2097181920","https://openalex.org/W2108930055","https://openalex.org/W2111447034","https://openalex.org/W2117720632","https://openalex.org/W2138717099","https://openalex.org/W2156395653","https://openalex.org/W2164654368","https://openalex.org/W6674732903","https://openalex.org/W6676582523"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W1982605029","https://openalex.org/W108567394","https://openalex.org/W1986134302","https://openalex.org/W135418979","https://openalex.org/W2139774918","https://openalex.org/W168551152","https://openalex.org/W1682500832","https://openalex.org/W1975823115","https://openalex.org/W2142885403"],"abstract_inverted_index":{"CMOS":[0,52],"technologies":[1],"for":[2],"mobile":[3],"systems":[4],"require":[5],"integrated":[6],"high":[7],"voltage":[8],"devices":[9,49],"to":[10,27],"address":[11],"analog":[12],"baseband":[13],"and":[14,19,34,68],"RF":[15],"power":[16],"applications.":[17],"Technology":[18],"device":[20],"architecture":[21],"evolution,":[22],"from":[23],"0.5":[24],"mum":[25],"BCD-like":[26],"advanced":[28,51],"45":[29],"nm":[30],"CMOS,":[31],"on":[32,62,71],"bulk":[33],"thin":[35],"SOI":[36],"substrates,":[37],"are":[38,53,74],"reviewed":[39],"in":[40,50],"this":[41],"paper.":[42],"Main":[43],"challenges":[44],"encountered":[45],"when":[46],"integrating":[47],"these":[48],"explained.":[54],"The":[55],"influence":[56],"of":[57,66],"the":[58,63],"gate":[59],"oxide":[60],"thickness":[61],"relevant":[64],"figures":[65],"merit":[67],"some":[69],"considerations":[70],"performance-reliability":[72],"trade-off":[73],"provided.":[75]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":4},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}