{"id":"https://openalex.org/W2118933001","doi":"https://doi.org/10.1109/cicc.2009.5280807","title":"A 29 dBm CMOS class-E power amplifier with 63% PAE using negative capacitance","display_name":"A 29 dBm CMOS class-E power amplifier with 63% PAE using negative capacitance","publication_year":2009,"publication_date":"2009-09-01","ids":{"openalex":"https://openalex.org/W2118933001","doi":"https://doi.org/10.1109/cicc.2009.5280807","mag":"2118933001"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2009.5280807","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2009.5280807","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE Custom Integrated Circuits Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5005782344","display_name":"Yonghoon Song","orcid":"https://orcid.org/0000-0002-3279-6432"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yonghoon Song","raw_affiliation_strings":["INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100402793","display_name":"Sung-Ho Lee","orcid":"https://orcid.org/0000-0003-3553-761X"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sungho Lee","raw_affiliation_strings":["INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054893048","display_name":"Jaechun Lee","orcid":"https://orcid.org/0000-0003-1220-8282"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaejun Lee","raw_affiliation_strings":["INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea","institution_ids":["https://openalex.org/I139264467"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5048849212","display_name":"Sangwook Nam","orcid":"https://orcid.org/0000-0003-3598-1497"},"institutions":[{"id":"https://openalex.org/I139264467","display_name":"Seoul National University","ror":"https://ror.org/04h9pn542","country_code":"KR","type":"education","lineage":["https://openalex.org/I139264467"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sangwook Nam","raw_affiliation_strings":["INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Seoul, South Korea","institution_ids":["https://openalex.org/I139264467"]},{"raw_affiliation_string":"INMC, School of Electrical Engineering and Computer Science, Seoul National University, Korea","institution_ids":["https://openalex.org/I139264467"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.6103,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.72863499,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"399","last_page":"402"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12791","display_name":"Full-Duplex Wireless Communications","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.8237221240997314},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.8212599754333496},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7549451589584351},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.7105555534362793},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6630771160125732},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6560970544815063},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.6288384199142456},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.4989967346191406},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4732523560523987},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4029105305671692},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3414660692214966},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2618712782859802},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15255069732666016},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.06245425343513489}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.8237221240997314},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.8212599754333496},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7549451589584351},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.7105555534362793},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6630771160125732},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6560970544815063},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.6288384199142456},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.4989967346191406},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4732523560523987},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4029105305671692},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3414660692214966},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2618712782859802},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15255069732666016},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.06245425343513489},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2009.5280807","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2009.5280807","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE Custom Integrated Circuits Conference","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8799999952316284}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W161028521","https://openalex.org/W1970580595","https://openalex.org/W1990737460","https://openalex.org/W2108930055","https://openalex.org/W2123169932","https://openalex.org/W2151107544","https://openalex.org/W2164527282","https://openalex.org/W2258905030","https://openalex.org/W2788359119"],"related_works":["https://openalex.org/W2058545256","https://openalex.org/W4396689093","https://openalex.org/W2394034449","https://openalex.org/W2904654231","https://openalex.org/W4210807885","https://openalex.org/W2051045034","https://openalex.org/W2248915580","https://openalex.org/W2999380399","https://openalex.org/W4304890870","https://openalex.org/W2212797913"],"abstract_inverted_index":{"This":[0],"paper":[1],"proposes":[2],"class-E":[3,39],"power":[4,41],"amplifier":[5,42],"including":[6,43],"negative":[7,15],"capacitance":[8,16,24],"to":[9],"optimize":[10],"shunt":[11,22],"drain":[12,23,59],"capacitance.":[13],"The":[14],"improves":[17],"efficiency,":[18],"compensates":[19],"for":[20],"surplus":[21],"resulting":[25],"from":[26],"parasitic":[27],"capacitance,":[28],"and":[29,61],"is":[30,46],"implemented":[31],"without":[32],"an":[33],"external":[34],"circuit.":[35],"A":[36],"cascode":[37],"single-ended":[38],"RF":[40],"driver":[44],"stage":[45],"fabricated":[47],"using":[48],"a":[49],"0.13-mum":[50],"standard":[51],"CMOS":[52],"technology":[53],"delivering":[54],"29":[55],"dBm":[56],"with":[57],"66%":[58],"efficiency":[60,64],"63%":[62],"power-added":[63],"at":[65],"1.8":[66],"GHz.":[67]},"counts_by_year":[{"year":2021,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}