{"id":"https://openalex.org/W1539880809","doi":"https://doi.org/10.1109/cicc.2005.1568699","title":"A capacitorless twin-transistor random access memory (TTRAM) on SOI","display_name":"A capacitorless twin-transistor random access memory (TTRAM) on SOI","publication_year":2006,"publication_date":"2006-01-18","ids":{"openalex":"https://openalex.org/W1539880809","doi":"https://doi.org/10.1109/cicc.2005.1568699","mag":"1539880809"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2005.1568699","is_oa":false,"landing_page_url":"http://doi.org/10.1109/cicc.2005.1568699","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005.","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021195159","display_name":"Fukashi Morishita","orcid":"https://orcid.org/0000-0002-3453-8701"},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"F. Morishita","raw_affiliation_strings":["Syst. Core Technol. Div., Renesas Technol. Corp., Hyogo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Syst. Core Technol. Div., Renesas Technol. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113507977","display_name":"Haruhiko Noda","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Noda","raw_affiliation_strings":["Syst. Core Technol. Div., Renesas Technol. Corp., Hyogo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Syst. Core Technol. Div., Renesas Technol. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079632800","display_name":"Takayuki Gyohten","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Gyohten","raw_affiliation_strings":["Syst. Core Technol. Div., Renesas Technol. Corp., Hyogo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Syst. Core Technol. Div., Renesas Technol. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019914869","display_name":"Masanori Okamoto","orcid":"https://orcid.org/0000-0003-0351-865X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Okamoto","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108363581","display_name":"T. Ipp\u014dshi","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Ipposhi","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110809239","display_name":"S. Maegawa","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Maegawa","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061347950","display_name":"K. Dosaka","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Dosaka","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]},{"author_position":"last","author":{"id":"https://openalex.org/A5040347203","display_name":"Kazutami Arimoto","orcid":"https://orcid.org/0000-0003-2871-7479"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Arimoto","raw_affiliation_strings":[],"raw_orcid":null,"affiliations":[]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.4509,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.91669253,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"428","last_page":"431"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7965043783187866},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6218658685684204},{"id":"https://openalex.org/keywords/random-access","display_name":"Random access","score":0.6011982560157776},{"id":"https://openalex.org/keywords/access-time","display_name":"Access time","score":0.5491951107978821},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5485445261001587},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.540772557258606},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.44394904375076294},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43671542406082153},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.421817421913147},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3483036756515503},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3033773601055145},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2314598560333252},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.2204122543334961},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.21838471293449402},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.20009112358093262},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.12718713283538818},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1026516854763031}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7965043783187866},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6218658685684204},{"id":"https://openalex.org/C101722063","wikidata":"https://www.wikidata.org/wiki/Q218825","display_name":"Random access","level":2,"score":0.6011982560157776},{"id":"https://openalex.org/C194080101","wikidata":"https://www.wikidata.org/wiki/Q46306","display_name":"Access time","level":2,"score":0.5491951107978821},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5485445261001587},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.540772557258606},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.44394904375076294},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43671542406082153},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.421817421913147},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3483036756515503},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3033773601055145},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2314598560333252},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.2204122543334961},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.21838471293449402},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.20009112358093262},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.12718713283538818},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1026516854763031}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2005.1568699","is_oa":false,"landing_page_url":"http://doi.org/10.1109/cicc.2005.1568699","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005.","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.7900000214576721,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1517280337","https://openalex.org/W1574719288","https://openalex.org/W1979146524","https://openalex.org/W2096700848","https://openalex.org/W2161029776","https://openalex.org/W2170310823","https://openalex.org/W2409475087","https://openalex.org/W4231699071","https://openalex.org/W6684791856"],"related_works":["https://openalex.org/W2079638770","https://openalex.org/W2375427054","https://openalex.org/W2040021470","https://openalex.org/W4390045048","https://openalex.org/W2063061014","https://openalex.org/W4401176878","https://openalex.org/W1920971936","https://openalex.org/W1619771466","https://openalex.org/W1554452560","https://openalex.org/W1983262605"],"abstract_inverted_index":{"We":[0,21],"propose":[1],"a":[2],"novel":[3],"capacitorless":[4],"twin-transistor":[5],"random":[6],"access":[7],"memory":[8],"(TTRAM).":[9],"The":[10],"2Mb":[11],"test":[12],"device":[13],"has":[14,26],"been":[15],"fabricated":[16],"on":[17],"130nm":[18],"SOI-CMOS":[19,48],"process.":[20],"demonstrate":[22],"the":[23,32,46],"TTRAM":[24,41],"cell":[25],"two":[27],"data-storage":[28],"states":[29],"and":[30,49,61],"confirm":[31],"data":[33],"retention":[34],"time":[35,58],"of":[36],"100ms":[37],"at":[38],"80/spl":[39],"deg/C.":[40],"process":[42],"is":[43,59],"compatible":[44],"with":[45],"conventional":[47],"never":[50],"requires":[51],"any":[52],"additional":[53],"processes.":[54],"A":[55],"6.1ns":[56],"row-access":[57],"achieved":[60],"250MHz":[62],"operation":[63],"can":[64],"be":[65],"realized":[66],"by":[67],"using":[68],"2bank":[69],"8b-burst":[70],"mode.":[71]},"counts_by_year":[{"year":2016,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}