{"id":"https://openalex.org/W2154003070","doi":"https://doi.org/10.1109/cicc.2004.1358884","title":"A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 \u03bcm CMOS","display_name":"A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 \u03bcm CMOS","publication_year":2004,"publication_date":"2004-11-30","ids":{"openalex":"https://openalex.org/W2154003070","doi":"https://doi.org/10.1109/cicc.2004.1358884","mag":"2154003070"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2004.1358884","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2004.1358884","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061348524","display_name":"A. Komijani","orcid":null},"institutions":[{"id":"https://openalex.org/I122411786","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055","country_code":"US","type":"education","lineage":["https://openalex.org/I122411786"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Komijani","raw_affiliation_strings":["Department of Electrical Engineering, California Institute of Technology, Pasadena, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, California Institute of Technology, Pasadena, CA, USA","institution_ids":["https://openalex.org/I122411786"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5079016793","display_name":"Ali Hajimiri","orcid":"https://orcid.org/0000-0001-6736-8019"},"institutions":[{"id":"https://openalex.org/I122411786","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055","country_code":"US","type":"education","lineage":["https://openalex.org/I122411786"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A. Hajimiri","raw_affiliation_strings":["Department of Electrical Engineering, California Institute of Technology, Pasadena, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, California Institute of Technology, Pasadena, CA, USA","institution_ids":["https://openalex.org/I122411786"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I122411786"],"apc_list":null,"apc_paid":null,"fwci":4.4078,"has_fulltext":false,"cited_by_count":28,"citation_normalized_percentile":{"value":0.94593131,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"561","last_page":"564"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7290486693382263},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6733678579330444},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6426173448562622},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.511856734752655},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5086125135421753},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.5042060613632202},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.47306764125823975},{"id":"https://openalex.org/keywords/power-gain","display_name":"Power gain","score":0.46548524498939514},{"id":"https://openalex.org/keywords/power-bandwidth","display_name":"Power bandwidth","score":0.46466386318206787},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.4645395576953888},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.44629180431365967},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4240683913230896},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2988341450691223},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.2730841636657715},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.25408053398132324},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07588633894920349}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7290486693382263},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6733678579330444},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6426173448562622},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.511856734752655},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5086125135421753},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.5042060613632202},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.47306764125823975},{"id":"https://openalex.org/C98377741","wikidata":"https://www.wikidata.org/wiki/Q7236514","display_name":"Power gain","level":4,"score":0.46548524498939514},{"id":"https://openalex.org/C191907038","wikidata":"https://www.wikidata.org/wiki/Q7236476","display_name":"Power bandwidth","level":5,"score":0.46466386318206787},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.4645395576953888},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.44629180431365967},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4240683913230896},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2988341450691223},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.2730841636657715},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.25408053398132324},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07588633894920349}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2004.1358884","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2004.1358884","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[{"id":"https://openalex.org/F4320309398","display_name":"California Institute of Technology","ror":"https://ror.org/05dxps055"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W35967389","https://openalex.org/W1482286080","https://openalex.org/W1606694637","https://openalex.org/W2097385544","https://openalex.org/W2101450067","https://openalex.org/W2115152088","https://openalex.org/W2129500778","https://openalex.org/W2150359611","https://openalex.org/W2170045763","https://openalex.org/W2170902588","https://openalex.org/W2798875205","https://openalex.org/W4229594554","https://openalex.org/W4240988206","https://openalex.org/W6684754457"],"related_works":["https://openalex.org/W2795275420","https://openalex.org/W3108616848","https://openalex.org/W4362501562","https://openalex.org/W3010230242","https://openalex.org/W2144336680","https://openalex.org/W2591212050","https://openalex.org/W2512837728","https://openalex.org/W2385846443","https://openalex.org/W4294086117","https://openalex.org/W2000328692"],"abstract_inverted_index":{"A":[0],"24":[1],"GHz,":[2,69],"+14.5":[3,60],"dBm":[4,61],"fully-integrated":[5],"power":[6,44,48,58],"amplifier":[7,45],"with":[8,62],"50":[9],"/spl":[10,20],"Omega/":[11],"input":[12],"and":[13,40,53],"output":[14,57],"matching":[15],"is":[16,34,82],"fabricated":[17],"using":[18],"0.18":[19],"mu/m":[21],"CMOS":[22],"transistors.":[23],"To":[24],"enable":[25],"this,":[26],"a":[27,47,54,63,75],"shielded-substrate":[28],"coplanar":[29],"waveguide":[30],"transmission":[31],"line":[32],"structure":[33],"used":[35],"to":[36],"achieve":[37],"low":[38],"loss":[39],"small":[41],"area.":[42],"The":[43,79],"achieves":[46],"gain":[49],"of":[50,59,67],"7":[51],"dB":[52,65],"maximum":[55],"single-ended":[56],"3":[64],"bandwidth":[66],"3.1":[68],"while":[70],"drawing":[71],"100":[72],"mA":[73],"from":[74],"2.8":[76],"V":[77],"supply.":[78],"chip":[80],"area":[81],"1.26":[83],"mm/sup":[84],"2/.":[85]},"counts_by_year":[{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}