{"id":"https://openalex.org/W2138861786","doi":"https://doi.org/10.1109/cicc.2004.1358820","title":"Analysis of SRAM neutron-induced errors based on the consideration of both charge-collection and parasitic-bipolar failure modes","display_name":"Analysis of SRAM neutron-induced errors based on the consideration of both charge-collection and parasitic-bipolar failure modes","publication_year":2004,"publication_date":"2004-01-01","ids":{"openalex":"https://openalex.org/W2138861786","doi":"https://doi.org/10.1109/cicc.2004.1358820","mag":"2138861786"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2004.1358820","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2004.1358820","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040106459","display_name":"Kensuke Osada","orcid":"https://orcid.org/0000-0001-9557-6851"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Osada","raw_affiliation_strings":["Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018573049","display_name":"Naoki Kitai","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Kitai","raw_affiliation_strings":["Hitachi ULSI Systems Co., Ltd., Kokubunji, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hitachi ULSI Systems Co., Ltd., Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063581783","display_name":"Shiro Kamohara","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Kamohara","raw_affiliation_strings":["Renesas Technology Corp., Kodaira, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Renesas Technology Corp., Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I4210153176"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042202496","display_name":"T. Kawahara","orcid":"https://orcid.org/0000-0002-7130-3397"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kawahara","raw_affiliation_strings":["Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hitachi, Ltd., Central Research Laboratory, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.25936656,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"e79 c","issue":null,"first_page":"357","last_page":"360"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.7825015187263489},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.7057576775550842},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6910693049430847},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.6455187201499939},{"id":"https://openalex.org/keywords/neutron","display_name":"Neutron","score":0.5239584445953369},{"id":"https://openalex.org/keywords/mode","display_name":"Mode (computer interface)","score":0.5035564303398132},{"id":"https://openalex.org/keywords/failure-mode-and-effects-analysis","display_name":"Failure mode and effects analysis","score":0.47016093134880066},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.46581459045410156},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.42941442131996155},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.39917629957199097},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3628457486629486},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3274555206298828},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22353744506835938},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.1795763373374939},{"id":"https://openalex.org/keywords/nuclear-physics","display_name":"Nuclear physics","score":0.17121621966362},{"id":"https://openalex.org/keywords/acoustics","display_name":"Acoustics","score":0.09810438752174377},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.09024462103843689}],"concepts":[{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.7825015187263489},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.7057576775550842},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6910693049430847},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.6455187201499939},{"id":"https://openalex.org/C152568617","wikidata":"https://www.wikidata.org/wiki/Q2348","display_name":"Neutron","level":2,"score":0.5239584445953369},{"id":"https://openalex.org/C48677424","wikidata":"https://www.wikidata.org/wiki/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.5035564303398132},{"id":"https://openalex.org/C66283442","wikidata":"https://www.wikidata.org/wiki/Q1389268","display_name":"Failure mode and effects analysis","level":2,"score":0.47016093134880066},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.46581459045410156},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.42941442131996155},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.39917629957199097},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3628457486629486},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3274555206298828},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22353744506835938},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.1795763373374939},{"id":"https://openalex.org/C185544564","wikidata":"https://www.wikidata.org/wiki/Q81197","display_name":"Nuclear physics","level":1,"score":0.17121621966362},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.09810438752174377},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.09024462103843689},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2004.1358820","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2004.1358820","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1874222854","https://openalex.org/W1967835393","https://openalex.org/W2031337541","https://openalex.org/W2037576944","https://openalex.org/W2114780624"],"related_works":["https://openalex.org/W4290647047","https://openalex.org/W1500230652","https://openalex.org/W2363504003","https://openalex.org/W2066033226","https://openalex.org/W2548582980","https://openalex.org/W2620706469","https://openalex.org/W2052914698","https://openalex.org/W2088929465","https://openalex.org/W2612883256","https://openalex.org/W4386933833"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"an":[3],"investigation":[4],"of":[5,8,23,48,56,79,93,121],"the":[6,20,24,41,44,70,83,91,96,111,115,119,128],"upsetting":[7],"values":[9,55],"in":[10,18,27],"cells":[11],"hit":[12],"by":[13],"alpha":[14],"particles":[15],"or":[16],"neutrons,":[17],"which":[19],"feedback":[21],"operation":[22],"cross-coupled":[25],"inverter":[26],"SRAM":[28],"is":[29],"accurately":[30],"modeled":[31],"through":[32],"simultaneous":[33],"device":[34],"and":[35,46,69,85,114],"circuit":[36],"simulation.":[37],"We":[38,75],"demonstrate,":[39],"for":[40,61,65,82,134],"first":[42],"time,":[43],"existence":[45],"mechanism":[47],"a":[49],"new":[50],"parasitic-bipolar-failure":[51],"(PBF)":[52],"mode.":[53,74],"Accurate":[54],"critical":[57,104],"charge":[58,94,105],"(Q/sub":[59,99],"cg/)":[60],"failure":[62],"are":[63,106],"calculated":[64],"both":[66],"this":[67],"mode":[68],"conventional":[71],"charge-collection-failure":[72],"(CCF)":[73],"identify":[76],"opposite":[77],"behaviors":[78],"Q/sub":[80],"cg/":[81],"CCF":[84],"PBF":[86],"modes":[87],"with":[88,118],"respect":[89],"to":[90,109,123],"amount":[92],"at":[95],"storage":[97],"node":[98],"node/).":[100],"The":[101],"results":[102,120],"on":[103,127],"also":[107],"used":[108],"predict":[110],"soft-error":[112],"rate":[113],"prediction":[116],"agrees":[117],"measurement":[122],"within":[124],"30%.":[125],"Based":[126],"results,":[129],"we":[130],"propose":[131],"design":[132],"techniques":[133],"reduced":[135],"SER.":[136]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}