{"id":"https://openalex.org/W2103320147","doi":"https://doi.org/10.1109/cicc.2004.1358816","title":"Reviews and future prospects of low-voltage embedded RAMs","display_name":"Reviews and future prospects of low-voltage embedded RAMs","publication_year":2004,"publication_date":"2004-11-30","ids":{"openalex":"https://openalex.org/W2103320147","doi":"https://doi.org/10.1109/cicc.2004.1358816","mag":"2103320147"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2004.1358816","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2004.1358816","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065241509","display_name":"L. Itoh","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"L. Itoh","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Central Research Lab., Hitachi Ltd., Tokyo, Japan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Central Research Lab., Hitachi Ltd., Tokyo, Japan#TAB#","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040106459","display_name":"Kensuke Osada","orcid":"https://orcid.org/0000-0001-9557-6851"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Osada","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Central Research Lab., Hitachi Ltd., Tokyo, Japan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Central Research Lab., Hitachi Ltd., Tokyo, Japan#TAB#","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042202496","display_name":"T. Kawahara","orcid":"https://orcid.org/0000-0002-7130-3397"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kawahara","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Central Research Lab., Hitachi Ltd., Tokyo, Japan#TAB#"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Central Research Lab., Hitachi Ltd., Tokyo, Japan#TAB#","institution_ids":["https://openalex.org/I65143321"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I65143321"],"apc_list":null,"apc_paid":null,"fwci":5.3776,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.96530905,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"339","last_page":"344"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.7660976648330688},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.7527962327003479},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7217826247215271},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6356245279312134},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5719295740127563},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5065613985061646},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.389990895986557},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3891000747680664},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3531663119792938},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.1114911139011383}],"concepts":[{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.7660976648330688},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.7527962327003479},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7217826247215271},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6356245279312134},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5719295740127563},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5065613985061646},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.389990895986557},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3891000747680664},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3531663119792938},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.1114911139011383},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2004.1358816","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2004.1358816","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1501909045","https://openalex.org/W1517581114","https://openalex.org/W1527183359","https://openalex.org/W1557022270","https://openalex.org/W1595098459","https://openalex.org/W1896973036","https://openalex.org/W2088072859","https://openalex.org/W2111701388","https://openalex.org/W2123808925","https://openalex.org/W2156817051","https://openalex.org/W2159224789","https://openalex.org/W2161312910","https://openalex.org/W2173522374","https://openalex.org/W2461943447","https://openalex.org/W2788911864","https://openalex.org/W4211113724","https://openalex.org/W4244266552","https://openalex.org/W6678367577","https://openalex.org/W6718954112","https://openalex.org/W6748549738"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W4401568740","https://openalex.org/W3148568549","https://openalex.org/W2098207691","https://openalex.org/W1648516568","https://openalex.org/W3178732595","https://openalex.org/W1859921603","https://openalex.org/W1571481168","https://openalex.org/W1590748692","https://openalex.org/W2085813843"],"abstract_inverted_index":{"Low-voltage":[0],"high-density":[1],"embedded":[2],"(e-)":[3],"RAMs,":[4],"focusing":[5,47],"on":[6,24,48],"RAM":[7,29],"cells":[8,56],"and":[9,16,31,33,43,57],"peripheral":[10,37,58],"circuits,":[11],"are":[12,21,45,60],"described.":[13],"First,":[14],"challenges":[15],"trends":[17],"in":[18,62],"low-voltage":[19,41,65],"e-RAMs":[20],"described":[22],"based":[23],"the":[25],"S/N":[26],"issue":[27],"of":[28,36,64],"cells,":[30],"leakage":[32],"speed-variation":[34],"issues":[35],"circuits.":[38,50],"Next,":[39],"state-of-the-art":[40],"e-DRAMs":[42],"e-SRAMs":[44],"investigated,":[46],"leakage-reduction":[49],"Finally,":[51],"future":[52],"prospects":[53],"for":[54],"e-RAM":[55],"circuits":[59],"discussed":[61],"terms":[63],"designs.":[66]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}