{"id":"https://openalex.org/W2126011756","doi":"https://doi.org/10.1109/cicc.2003.1249460","title":"A 2-GHz wide band low phase noise voltage-controlled oscillator with on-chip LC tank","display_name":"A 2-GHz wide band low phase noise voltage-controlled oscillator with on-chip LC tank","publication_year":2004,"publication_date":"2004-02-03","ids":{"openalex":"https://openalex.org/W2126011756","doi":"https://doi.org/10.1109/cicc.2003.1249460","mag":"2126011756"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2003.1249460","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2003.1249460","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003.","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5031555537","display_name":"Je-Kwang Cho","orcid":"https://orcid.org/0000-0003-4065-4351"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Je-Kwang Cho","raw_affiliation_strings":["RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052303654","display_name":"Hanil Lee","orcid":"https://orcid.org/0000-0003-4792-684X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Han-Il Lee","raw_affiliation_strings":["RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111925270","display_name":"Kyung-Suc Nah","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyung-Suc Nah","raw_affiliation_strings":["RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5036392653","display_name":"Byeong-Ha Park","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Byeong-Ha Park","raw_affiliation_strings":["RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"RF PT, System-LSI Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Syst.-LSI Div., Samsung Electron., Kyounggi-Do, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.0688,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.93908545,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"54","issue":null,"first_page":"559","last_page":"562"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11417","display_name":"Advancements in PLL and VCO Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/voltage-controlled-oscillator","display_name":"Voltage-controlled oscillator","score":0.9089112281799316},{"id":"https://openalex.org/keywords/phase-noise","display_name":"Phase noise","score":0.8651843667030334},{"id":"https://openalex.org/keywords/dbc","display_name":"dBc","score":0.7164098620414734},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5741065740585327},{"id":"https://openalex.org/keywords/lc-circuit","display_name":"LC circuit","score":0.4989197254180908},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4920739531517029},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.48748779296875},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.43544477224349976},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37744027376174927},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3232061266899109},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2541765570640564}],"concepts":[{"id":"https://openalex.org/C5291336","wikidata":"https://www.wikidata.org/wiki/Q852341","display_name":"Voltage-controlled oscillator","level":3,"score":0.9089112281799316},{"id":"https://openalex.org/C89631360","wikidata":"https://www.wikidata.org/wiki/Q1428766","display_name":"Phase noise","level":2,"score":0.8651843667030334},{"id":"https://openalex.org/C193523891","wikidata":"https://www.wikidata.org/wiki/Q1771950","display_name":"dBc","level":3,"score":0.7164098620414734},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5741065740585327},{"id":"https://openalex.org/C34627536","wikidata":"https://www.wikidata.org/wiki/Q732473","display_name":"LC circuit","level":4,"score":0.4989197254180908},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4920739531517029},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.48748779296875},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.43544477224349976},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37744027376174927},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3232061266899109},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2541765570640564}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2003.1249460","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2003.1249460","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003.","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1485548677","https://openalex.org/W1963808541","https://openalex.org/W2082211203","https://openalex.org/W2099801150","https://openalex.org/W2104340505","https://openalex.org/W2108370022","https://openalex.org/W2128660367","https://openalex.org/W2144609941","https://openalex.org/W4300912179"],"related_works":["https://openalex.org/W2141726610","https://openalex.org/W2061664740","https://openalex.org/W1964543336","https://openalex.org/W4242529045","https://openalex.org/W2134439706","https://openalex.org/W2057338677","https://openalex.org/W2105518569","https://openalex.org/W4236967454","https://openalex.org/W2112742062","https://openalex.org/W2017334866"],"abstract_inverted_index":{"A":[0],"2":[1,76],"GHz":[2,77],"wide":[3,21,86],"band":[4,22],"low":[5],"phase":[6,16,62],"noise":[7,17,63],"voltage-controlled":[8],"oscillator":[9],"(VCO)":[10],"is":[11,56,64,84,97,124],"presented.":[12],"To":[13],"achieve":[14],"excellent":[15],"performance":[18],"while":[19],"maintaining":[20],"frequency":[23,70],"tuning":[24,82],"characteristic,":[25],"a":[26,75,127],"6-bit":[27],"digitally":[28],"controlled":[29],"switched-capacitor":[30],"bank":[31],"and":[32,91],"tail":[33],"current":[34],"control":[35],"scheme":[36],"are":[37],"used.":[38],"The":[39,60,80,107,122],"effect":[40],"of":[41,45,52,71],"the":[42,46,50,53,92,102,118],"gate":[43],"length":[44],"MOS":[47],"switches":[48],"on":[49],"Q-factor":[51],"LC":[54],"tank":[55],"also":[57],"analysed":[58],"qualitatively.":[59],"measured":[61,93],"-115":[65],"dBc/Hz":[66],"at":[67,101],"an":[68],"offset":[69],"100":[72],"kHz":[73],"from":[74,111],"operating":[78,120],"frequency.":[79,121],"total":[81],"range":[83],"as":[85,87],"550":[88],"MHz":[89],"(30%)":[90],"RF":[94],"output":[95,105],"power":[96],"about":[98],"-10":[99],"dBm":[100],"single":[103],"ended":[104],"buffer.":[106],"VCO":[108,123],"gain":[109],"varies":[110],"21":[112],"MHz/V":[113,116],"to":[114],"45":[115],"for":[117],"entire":[119],"implemented":[125],"using":[126],"0.5":[128],"/spl":[129],"mu/m":[130],"SiGe":[131],"BiCMOS":[132],"process.":[133]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}