{"id":"https://openalex.org/W1549920774","doi":"https://doi.org/10.1109/cicc.2003.1249415","title":"Scaling beyond the 65 nm node with FinFET-DGCMOS","display_name":"Scaling beyond the 65 nm node with FinFET-DGCMOS","publication_year":2004,"publication_date":"2004-02-03","ids":{"openalex":"https://openalex.org/W1549920774","doi":"https://doi.org/10.1109/cicc.2003.1249415","mag":"1549920774"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2003.1249415","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2003.1249415","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003.","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5078572020","display_name":"E. Nowak","orcid":"https://orcid.org/0009-0006-5217-8005"},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"E.J. Nowak","raw_affiliation_strings":["IBM Microelectronics Division, Essex Junction, VT, U.S.A"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, Essex Junction, VT, U.S.A","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077731724","display_name":"Thomas Ludwig","orcid":"https://orcid.org/0000-0002-9996-1084"},"institutions":[{"id":"https://openalex.org/I4210095996","display_name":"IBM (Germany)","ror":"https://ror.org/00pm7rm97","country_code":"DE","type":"company","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210095996"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"T. Ludwig","raw_affiliation_strings":["IBM Systems Group, Boeblingen, Germany"],"affiliations":[{"raw_affiliation_string":"IBM Systems Group, Boeblingen, Germany","institution_ids":["https://openalex.org/I4210095996"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033150827","display_name":"I. Aller","orcid":null},"institutions":[{"id":"https://openalex.org/I4210095996","display_name":"IBM (Germany)","ror":"https://ror.org/00pm7rm97","country_code":"DE","type":"company","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210095996"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"I. Aller","raw_affiliation_strings":["IBM Systems Group, Boeblingen, Germany"],"affiliations":[{"raw_affiliation_string":"IBM Systems Group, Boeblingen, Germany","institution_ids":["https://openalex.org/I4210095996"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087915051","display_name":"J. Kedzierski","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Kedzierski","raw_affiliation_strings":["IBM Systems Group, IBM T.J. Watson Research Center, Yorktown Heights, N.Y., U.S.A"],"affiliations":[{"raw_affiliation_string":"IBM Systems Group, IBM T.J. Watson Research Center, Yorktown Heights, N.Y., U.S.A","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113933644","display_name":"M.S. Leong","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Leong","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013437447","display_name":"B.A. Rainey","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"B. Rainey","raw_affiliation_strings":["IBM Microelectronics Division, Essex Junction, VT, U.S.A"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, Essex Junction, VT, U.S.A","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080331723","display_name":"M. Breitwisch","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Breitwisch","raw_affiliation_strings":["IBM Microelectronics Division, Essex Junction, VT, U.S.A"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, Essex Junction, VT, U.S.A","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021251233","display_name":"V. Gemhoefer","orcid":null},"institutions":[{"id":"https://openalex.org/I4210095996","display_name":"IBM (Germany)","ror":"https://ror.org/00pm7rm97","country_code":"DE","type":"company","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210095996"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"V. Gemhoefer","raw_affiliation_strings":["IBM Systems Group, Boeblingen, Germany"],"affiliations":[{"raw_affiliation_string":"IBM Systems Group, Boeblingen, Germany","institution_ids":["https://openalex.org/I4210095996"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013196486","display_name":"Joachim Keinert","orcid":"https://orcid.org/0000-0003-1857-3862"},"institutions":[{"id":"https://openalex.org/I4210095996","display_name":"IBM (Germany)","ror":"https://ror.org/00pm7rm97","country_code":"DE","type":"company","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210095996"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"J. Keinert","raw_affiliation_strings":["IBM Systems Group, Boeblingen, Germany"],"affiliations":[{"raw_affiliation_string":"IBM Systems Group, Boeblingen, Germany","institution_ids":["https://openalex.org/I4210095996"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063819904","display_name":"David Fried","orcid":"https://orcid.org/0000-0001-6376-0080"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D.M. Fried","raw_affiliation_strings":["IBM Microelectronics Division, Essex Junction, VT, U.S.A"],"affiliations":[{"raw_affiliation_string":"IBM Microelectronics Division, Essex Junction, VT, U.S.A","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5078572020"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":6.2541,"has_fulltext":false,"cited_by_count":36,"citation_normalized_percentile":{"value":0.96519982,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"339","last_page":"342"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7175162434577942},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.7107238173484802},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6574673056602478},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.6024590730667114},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.5848994851112366},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.5839695334434509},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4821431338787079},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4778827726840973},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.44122034311294556},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.43152594566345215},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4178425073623657},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.41469836235046387},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38841208815574646},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.33508479595184326},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3267485499382019},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.31132933497428894},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19037023186683655},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.06890437006950378}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7175162434577942},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.7107238173484802},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6574673056602478},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.6024590730667114},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.5848994851112366},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.5839695334434509},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4821431338787079},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4778827726840973},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.44122034311294556},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43152594566345215},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4178425073623657},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.41469836235046387},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38841208815574646},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.33508479595184326},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3267485499382019},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31132933497428894},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19037023186683655},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.06890437006950378},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2003.1249415","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2003.1249415","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003.","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1540105840","https://openalex.org/W1564694322","https://openalex.org/W1590842594","https://openalex.org/W2044807699","https://openalex.org/W2111050400","https://openalex.org/W2128355458","https://openalex.org/W2150952982","https://openalex.org/W2426176540","https://openalex.org/W2536956513","https://openalex.org/W2545107937","https://openalex.org/W6632503203","https://openalex.org/W6635215854","https://openalex.org/W6676374691","https://openalex.org/W6717857783"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W1982303956","https://openalex.org/W4240211787","https://openalex.org/W2210735515","https://openalex.org/W3127857378","https://openalex.org/W1855946819","https://openalex.org/W2545571326","https://openalex.org/W2581156470","https://openalex.org/W2059929644","https://openalex.org/W2143114492"],"abstract_inverted_index":{"Exponential":[0],"growth":[1],"in":[2],"leakage":[3],"power":[4],"density":[5],"with":[6,67],"physical":[7,91],"scaling":[8,53],"is":[9,57],"driving":[10],"ULSI":[11],"technology":[12],"towards":[13],"innovative":[14],"device":[15],"architectures.":[16],"Double-gate":[17],"CMOS":[18,65],"(DGCMOS),":[19],"achieved":[20],"through":[21],"use":[22],"of":[23,62],"the":[24,47,63,72],"Delta":[25],"Device":[26],"(D.Hisamoto":[27],"et":[28,36],"al,":[29,37],"IEDM":[30,38],"1989,":[31],"p.833-836),":[32],"or":[33],"FinFET":[34,55],"(X.Huang":[35],"1999,":[39],"p.67-70),":[40],"provides":[41],"both":[42],"a":[43,51,75],"tactical":[44],"solution":[45],"to":[46,60,78,86,90],"gate-leakage":[48],"challenge":[49],"and":[50],"strategic":[52],"advantage.":[54],"fabrication":[56],"very":[58],"close":[59],"that":[61],"conventional":[64],"process,":[66],"only":[68],"minor":[69],"disruptions,":[70],"yielding":[71],"potential":[73],"for":[74],"rapid":[76],"deployment":[77],"manufacturing.":[79],"Planar":[80],"circuit":[81],"designs":[82],"have":[83],"been":[84],"converted":[85],"FinFET-DGCMOS":[87],"without":[88],"disruption":[89],"area.":[92]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}