{"id":"https://openalex.org/W1607616409","doi":"https://doi.org/10.1109/cicc.2002.1012883","title":"High speed, low power, optoelectronic InP-based HBT integrated circuits","display_name":"High speed, low power, optoelectronic InP-based HBT integrated circuits","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W1607616409","doi":"https://doi.org/10.1109/cicc.2002.1012883","mag":"1607616409"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2002.1012883","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012883","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063795582","display_name":"M. Sokolich","orcid":"https://orcid.org/0000-0002-4875-6857"},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"M. Sokolich","raw_affiliation_strings":["HRL Laboratories LLC, Malibu, CA, USA","Hughes Res. Labs., Malibu, CA, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"HRL Laboratories LLC, Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"Hughes Res. Labs., Malibu, CA, USA#TAB#","institution_ids":["https://openalex.org/I200576644"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5063795582"],"corresponding_institution_ids":["https://openalex.org/I200576644"],"apc_list":null,"apc_paid":null,"fwci":0.6954,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.69459339,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"483","last_page":"490"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10232","display_name":"Optical Network Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.9015240669250488},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5753116607666016},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5645633935928345},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.550160825252533},{"id":"https://openalex.org/keywords/transceiver","display_name":"Transceiver","score":0.5449955463409424},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5364037156105042},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.47141003608703613},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4507076144218445},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.4351784586906433},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4217897653579712},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.384702205657959},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.363914430141449},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24720817804336548},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1419723927974701},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.11886870861053467}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.9015240669250488},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5753116607666016},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5645633935928345},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.550160825252533},{"id":"https://openalex.org/C7720470","wikidata":"https://www.wikidata.org/wiki/Q954187","display_name":"Transceiver","level":3,"score":0.5449955463409424},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5364037156105042},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.47141003608703613},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4507076144218445},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4351784586906433},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4217897653579712},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.384702205657959},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.363914430141449},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24720817804336548},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1419723927974701},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.11886870861053467}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2002.1012883","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012883","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1509698782","https://openalex.org/W1510418700","https://openalex.org/W1925195366","https://openalex.org/W1945357642","https://openalex.org/W2022876490","https://openalex.org/W2060563482","https://openalex.org/W2099689722","https://openalex.org/W2110066180","https://openalex.org/W2112685885","https://openalex.org/W2127784089","https://openalex.org/W2135212724","https://openalex.org/W2154249635","https://openalex.org/W2154587784","https://openalex.org/W2155182795","https://openalex.org/W2166834825","https://openalex.org/W2168613959","https://openalex.org/W2169951092","https://openalex.org/W2170809518","https://openalex.org/W2536320253","https://openalex.org/W2537188592","https://openalex.org/W2987999835","https://openalex.org/W2989049547","https://openalex.org/W3216664630","https://openalex.org/W6630585540"],"related_works":["https://openalex.org/W1567282658","https://openalex.org/W2393767093","https://openalex.org/W112868940","https://openalex.org/W2102511360","https://openalex.org/W2370543964","https://openalex.org/W1169114565","https://openalex.org/W3151307272","https://openalex.org/W1013142806","https://openalex.org/W2066462051","https://openalex.org/W2351481448"],"abstract_inverted_index":{"The":[0],"next":[1],"generation":[2],"of":[3,67],"fiber":[4],"optic":[5],"communication":[6,59],"systems":[7],"will":[8],"require":[9],"circuits":[10],"operating":[11],"at":[12],"50":[13],"GHz":[14],"clock":[15],"rates.":[16],"InP-based":[17],"Heterojunction":[18],"Bipolar":[19],"Transistors":[20],"(HBTs)":[21],"are":[22,62],"ideally":[23],"suited":[24],"for":[25],"the":[26,53,64],"relatively":[27],"low":[28,35],"integration":[29],"levels":[30],"but":[31],"high":[32,68],"speed":[33,69],"and":[34,45,52],"power":[36],"required":[37],"in":[38],"optoelectronic":[39],"transceivers.":[40],"We":[41],"review":[42],"material,":[43],"device":[44],"circuit":[46],"issues":[47],"related":[48],"to":[49],"InP":[50],"HBT":[51],"significant":[54],"challenge":[55],"that":[56],"exists":[57],"because":[58],"system":[60],"requirements":[61],"approaching":[63],"performance":[65],"limits":[66],"technologies.":[70]},"counts_by_year":[{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}