{"id":"https://openalex.org/W2170984960","doi":"https://doi.org/10.1109/cicc.2002.1012838","title":"A 1.2 Gbps SOI-BiCMOS write driver for hard disk drives","display_name":"A 1.2 Gbps SOI-BiCMOS write driver for hard disk drives","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W2170984960","doi":"https://doi.org/10.1109/cicc.2002.1012838","mag":"2170984960"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2002.1012838","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012838","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023544191","display_name":"Hirokazu Yoshizawa","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Yoshizawa","raw_affiliation_strings":["Device Development Center, Hitachi and Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Development Center, Hitachi and Limited, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048900789","display_name":"Yasuyuki Kobayashi","orcid":"https://orcid.org/0000-0003-2176-5005"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Kobayashi","raw_affiliation_strings":["Device Development Center, Hitachi and Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Development Center, Hitachi and Limited, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059974888","display_name":"Masahiro Yoshinaga","orcid":"https://orcid.org/0000-0002-7243-1761"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Yoshinaga","raw_affiliation_strings":["Device Development Center, Hitachi and Limited, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Device Development Center, Hitachi and Limited, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002658256","display_name":"Y. Ookuma","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Ookuma","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061633384","display_name":"K. Maio","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Maio","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5055996471","display_name":"Kazunori Irikura","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Irikura","raw_affiliation_strings":["Hitachi ULSI Systems Company, Limited, Ome, Tokyo, Japan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hitachi ULSI Systems Company, Limited, Ome, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I65143321"],"apc_list":null,"apc_paid":null,"fwci":1.7231,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.85578671,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"349","last_page":"352"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/preamplifier","display_name":"Preamplifier","score":0.8291473984718323},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.7495946884155273},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7477425932884216},{"id":"https://openalex.org/keywords/settling-time","display_name":"Settling time","score":0.6615456342697144},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.610673189163208},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5921922326087952},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.4611435532569885},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.43756014108657837},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.43465954065322876},{"id":"https://openalex.org/keywords/output-impedance","display_name":"Output impedance","score":0.4307451844215393},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.42158716917037964},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.39952516555786133},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3718131184577942},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28249746561050415},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2746436595916748},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2679089605808258},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.25808489322662354},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.1996869146823883},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.1393929421901703}],"concepts":[{"id":"https://openalex.org/C14245642","wikidata":"https://www.wikidata.org/wiki/Q399804","display_name":"Preamplifier","level":4,"score":0.8291473984718323},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.7495946884155273},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7477425932884216},{"id":"https://openalex.org/C14781684","wikidata":"https://www.wikidata.org/wiki/Q3983320","display_name":"Settling time","level":3,"score":0.6615456342697144},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.610673189163208},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5921922326087952},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.4611435532569885},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.43756014108657837},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.43465954065322876},{"id":"https://openalex.org/C58112919","wikidata":"https://www.wikidata.org/wiki/Q631203","display_name":"Output impedance","level":3,"score":0.4307451844215393},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42158716917037964},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.39952516555786133},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3718131184577942},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28249746561050415},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2746436595916748},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2679089605808258},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.25808489322662354},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.1996869146823883},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1393929421901703},{"id":"https://openalex.org/C160030872","wikidata":"https://www.wikidata.org/wiki/Q2142864","display_name":"Step response","level":2,"score":0.0},{"id":"https://openalex.org/C133731056","wikidata":"https://www.wikidata.org/wiki/Q4917288","display_name":"Control engineering","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2002.1012838","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012838","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8399999737739563,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W1590496430","https://openalex.org/W2122449891","https://openalex.org/W6635409141"],"related_works":["https://openalex.org/W2036834634","https://openalex.org/W2126751867","https://openalex.org/W4237282970","https://openalex.org/W4210809443","https://openalex.org/W3015406624","https://openalex.org/W2052286102","https://openalex.org/W3091913842","https://openalex.org/W2380585702","https://openalex.org/W4312456876","https://openalex.org/W4385302109"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"a":[3,8,46,55,65],"voltage-type":[4],"write":[5,57],"driver":[6],"for":[7],"+5/-5":[9],"V":[10],"preamplifier.":[11],"A":[12],"good":[13],"rise/fall":[14],"time":[15,48],"and":[16],"smooth":[17],"settling":[18],"are":[19],"achieved":[20],"with":[21,54],"full":[22],"or":[23],"partial":[24],"impedance":[25],"matching":[26],"by":[27],"maximizing":[28],"the":[29,34],"driving":[30],"voltage":[31],"up":[32],"to":[33],"power":[35],"source.":[36],"Designed":[37],"in":[38],"0.35":[39],"/spl":[40],"mu/m":[41],"SOI-BiCMOS,":[42],"it":[43],"has":[44],"demonstrated":[45],"rise":[47],"as":[49,51],"short":[50],"0.34":[52],"ns":[53],"peak-to-peak":[56],"current":[58],"of":[59,69],"more":[60],"than":[61],"150":[62],"mA":[63],"at":[64],"data":[66],"transfer":[67],"rate":[68],"1.2":[70],"Gbps.":[71]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}