{"id":"https://openalex.org/W2099015279","doi":"https://doi.org/10.1109/cicc.2002.1012798","title":"Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs","display_name":"Modeling the gate-related high-frequency and noise characteristics of deep-submicron MOSFETs","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W2099015279","doi":"https://doi.org/10.1109/cicc.2002.1012798","mag":"2099015279"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2002.1012798","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012798","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008520282","display_name":"R. Kraus","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]},{"id":"https://openalex.org/I40527276","display_name":"Universit\u00e4t der Bundeswehr M\u00fcnchen","ror":"https://ror.org/05kkv3f82","country_code":"DE","type":"education","lineage":["https://openalex.org/I1315109972","https://openalex.org/I40527276","https://openalex.org/I4387152969"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"R. Kraus","raw_affiliation_strings":["Bundeswehr University of Munich, Neubiberg, Germany","Infineon Technologies AG, CFE TD SIM PX1, Munich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bundeswehr University of Munich, Neubiberg, Germany","institution_ids":["https://openalex.org/I40527276"]},{"raw_affiliation_string":"Infineon Technologies AG, CFE TD SIM PX1, Munich, Germany","institution_ids":["https://openalex.org/I137594350"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030193902","display_name":"G. Knoblinger","orcid":null},"institutions":[{"id":"https://openalex.org/I137594350","display_name":"Infineon Technologies (Germany)","ror":"https://ror.org/005kw6t15","country_code":"DE","type":"company","lineage":["https://openalex.org/I137594350"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"G. Knoblinger","raw_affiliation_strings":["Infineon Technologies AG, CFE TD SIM PX1, Munich, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Infineon Technologies AG, CFE TD SIM PX1, Munich, Germany","institution_ids":["https://openalex.org/I137594350"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.1538,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.87367078,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"209","last_page":"212"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.6812412738800049},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6004178524017334},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5754647850990295},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49654442071914673},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4541054666042328},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4529288709163666},{"id":"https://openalex.org/keywords/flicker-noise","display_name":"Flicker noise","score":0.4502781927585602},{"id":"https://openalex.org/keywords/infrasound","display_name":"Infrasound","score":0.44075673818588257},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.4389909505844116},{"id":"https://openalex.org/keywords/and-gate","display_name":"AND gate","score":0.42658331990242004},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4217957854270935},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40215203166007996},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3958277702331543},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.3173901438713074},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2717854976654053},{"id":"https://openalex.org/keywords/acoustics","display_name":"Acoustics","score":0.2693571448326111},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2412300705909729},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2361384630203247},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13628050684928894},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.09408733248710632},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.07237541675567627}],"concepts":[{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.6812412738800049},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6004178524017334},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5754647850990295},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49654442071914673},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4541054666042328},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4529288709163666},{"id":"https://openalex.org/C113873419","wikidata":"https://www.wikidata.org/wiki/Q1410810","display_name":"Flicker noise","level":5,"score":0.4502781927585602},{"id":"https://openalex.org/C207240575","wikidata":"https://www.wikidata.org/wiki/Q212082","display_name":"Infrasound","level":2,"score":0.44075673818588257},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4389909505844116},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.42658331990242004},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4217957854270935},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40215203166007996},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3958277702331543},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.3173901438713074},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2717854976654053},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.2693571448326111},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2412300705909729},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2361384630203247},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13628050684928894},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.09408733248710632},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.07237541675567627},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2002.1012798","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012798","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W1483625982","https://openalex.org/W1533614470","https://openalex.org/W1749561684","https://openalex.org/W2040457706","https://openalex.org/W2129137228","https://openalex.org/W2144546776","https://openalex.org/W2154116205","https://openalex.org/W2544772612","https://openalex.org/W2789053020","https://openalex.org/W6637551014","https://openalex.org/W6729700805"],"related_works":["https://openalex.org/W2695582473","https://openalex.org/W2975489134","https://openalex.org/W2026941555","https://openalex.org/W2095193959","https://openalex.org/W202152615","https://openalex.org/W2368066921","https://openalex.org/W2352885854","https://openalex.org/W2365204855","https://openalex.org/W2081877870","https://openalex.org/W2087375872"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3],"compact":[4],"model":[5,54,78],"considering":[6],"the":[7,13,22,28,47,51,57,74,77],"high-frequency":[8],"and":[9,40,79,84],"noise":[10,43,49,60],"effects":[11],"at":[12],"gate":[14,29,42,59],"of":[15,34,56,76],"MOS":[16],"transistors":[17],"which":[18],"are":[19,50],"caused":[20],"by":[21],"channel":[23,68,86],"resistance":[24],"in":[25],"series":[26],"to":[27,46],"capacitance.":[30],"The":[31],"real":[32],"part":[33],"input":[35],"impedance,":[36],"nonquasistatic":[37],"charge":[38],"variations":[39],"induced":[41,58],"with":[44,65,71],"correlation":[45],"drain":[48],"results.":[52],"A":[53],"equation":[55],"is":[61],"developed":[62],"for":[63,82],"MOSFETs":[64],"very":[66],"short":[67,83],"lengths.":[69],"Comparisons":[70],"measurements":[72],"verify":[73],"accuracy":[75],"its":[80],"validity":[81],"long":[85],"transistors.":[87]},"counts_by_year":[{"year":2022,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}