{"id":"https://openalex.org/W2124206621","doi":"https://doi.org/10.1109/cicc.2002.1012775","title":"A simple 1-transistor capacitor-less memory cell for high performance embedded DRAMs","display_name":"A simple 1-transistor capacitor-less memory cell for high performance embedded DRAMs","publication_year":2003,"publication_date":"2003-06-25","ids":{"openalex":"https://openalex.org/W2124206621","doi":"https://doi.org/10.1109/cicc.2002.1012775","mag":"2124206621"},"language":"en","primary_location":{"id":"doi:10.1109/cicc.2002.1012775","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012775","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113576343","display_name":"P. Fazan","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P.C. Fazan","raw_affiliation_strings":["Innovative Silicon Solutions, Le Landeron, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Innovative Silicon Solutions, Le Landeron, Switzerland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019338444","display_name":"S. Okhonin","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Okhonin","raw_affiliation_strings":["Innovative Silicon Solutions, Le Landeron, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Innovative Silicon Solutions, Le Landeron, Switzerland","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090585144","display_name":"M. Nagoga","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Nagoga","raw_affiliation_strings":["Innovative Silicon Solutions, Le Landeron, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Innovative Silicon Solutions, Le Landeron, Switzerland","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112012298","display_name":"J.-M. Sallese","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J.-M. Sallese","raw_affiliation_strings":["Innovative Silicon Solutions, Le Landeron, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Innovative Silicon Solutions, Le Landeron, Switzerland","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":0,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.8615,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.72957349,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"99","last_page":"102"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.6414909958839417},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.5962138772010803},{"id":"https://openalex.org/keywords/dynamic-random-access-memory","display_name":"Dynamic random-access memory","score":0.582527220249176},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.56855708360672},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.5603837370872498},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5322555899620056},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5299984812736511},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.49563300609588623},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.48229196667671204},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4352225363254547},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.4199162423610687},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4115905165672302},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3942492604255676},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.3845469057559967},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.3803336024284363},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2750242054462433},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.26879316568374634},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.25899916887283325},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.21380969882011414},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.20601516962051392},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16814395785331726},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.15055102109909058},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10582396388053894}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.6414909958839417},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.5962138772010803},{"id":"https://openalex.org/C118702147","wikidata":"https://www.wikidata.org/wiki/Q189396","display_name":"Dynamic random-access memory","level":3,"score":0.582527220249176},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.56855708360672},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.5603837370872498},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5322555899620056},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5299984812736511},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.49563300609588623},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.48229196667671204},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4352225363254547},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.4199162423610687},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4115905165672302},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3942492604255676},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.3845469057559967},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.3803336024284363},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2750242054462433},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.26879316568374634},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.25899916887283325},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.21380969882011414},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.20601516962051392},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16814395785331726},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.15055102109909058},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10582396388053894},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cicc.2002.1012775","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cicc.2002.1012775","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.7699999809265137}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W1517280337","https://openalex.org/W1999581116","https://openalex.org/W2141161586","https://openalex.org/W2533445658","https://openalex.org/W2537599394"],"related_works":["https://openalex.org/W2011998170","https://openalex.org/W1966671390","https://openalex.org/W2056061410","https://openalex.org/W4232117715","https://openalex.org/W4234756210","https://openalex.org/W2276660454","https://openalex.org/W2799605989","https://openalex.org/W2534660380","https://openalex.org/W2066774071","https://openalex.org/W1555400472"],"abstract_inverted_index":{"A":[0],"new":[1],"compact":[2],"memory":[3,12,31],"architecture":[4],"is":[5],"proposed":[6],"for":[7,58],"embedded":[8],"dynamic":[9],"random":[10],"access":[11],"(eDRAM)":[13],"cells.":[14],"By":[15],"exploiting":[16],"the":[17,65],"floating":[18],"body":[19],"effect":[20],"of":[21,71],"partially":[22],"depleted":[23],"silicon":[24],"on":[25],"insulator":[26],"(SOI)":[27],"devices,":[28],"a":[29,37,69],"one-transistor":[30],"cell":[32,66],"can":[33],"be":[34],"integrated":[35],"in":[36],"pure":[38],"logic":[39],"SOI":[40],"technology":[41],"without":[42],"adding":[43],"any":[44],"process":[45],"step.":[46],"The":[47],"data":[48],"retention,":[49],"device":[50],"operation":[51],"principles":[52],"and":[53],"reliability":[54],"make":[55],"it":[56],"ideal":[57],"high":[59],"performance":[60],"eDRAM":[61],"applications":[62],"while":[63],"reducing":[64],"area":[67],"by":[68],"factor":[70],"two.":[72]},"counts_by_year":[{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}