{"id":"https://openalex.org/W2593977752","doi":"https://doi.org/10.1109/ccwc.2017.7868477","title":"SEU tolerance of FinFET 6T SRAM, 8T SRAM and DICE memory cells","display_name":"SEU tolerance of FinFET 6T SRAM, 8T SRAM and DICE memory cells","publication_year":2017,"publication_date":"2017-01-01","ids":{"openalex":"https://openalex.org/W2593977752","doi":"https://doi.org/10.1109/ccwc.2017.7868477","mag":"2593977752"},"language":"en","primary_location":{"id":"doi:10.1109/ccwc.2017.7868477","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ccwc.2017.7868477","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 7th Annual Computing and Communication Workshop and Conference (CCWC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109454293","display_name":"Ahmed Sattar Sajit","orcid":null},"institutions":[{"id":"https://openalex.org/I142934699","display_name":"California State University, Fullerton","ror":"https://ror.org/02avqqw26","country_code":"US","type":"education","lineage":["https://openalex.org/I142934699"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Ahmed S. Sajit","raw_affiliation_strings":["College of Engineering and Computer Science, California State University, Fullerton Fullerton, CA, U.S.A"],"affiliations":[{"raw_affiliation_string":"College of Engineering and Computer Science, California State University, Fullerton Fullerton, CA, U.S.A","institution_ids":["https://openalex.org/I142934699"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5068960788","display_name":"Michael A. Turi","orcid":"https://orcid.org/0000-0002-9171-5305"},"institutions":[{"id":"https://openalex.org/I142934699","display_name":"California State University, Fullerton","ror":"https://ror.org/02avqqw26","country_code":"US","type":"education","lineage":["https://openalex.org/I142934699"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael A. Turi","raw_affiliation_strings":["College of Engineering and Computer Science, California State University, Fullerton Fullerton, CA, U.S.A"],"affiliations":[{"raw_affiliation_string":"College of Engineering and Computer Science, California State University, Fullerton Fullerton, CA, U.S.A","institution_ids":["https://openalex.org/I142934699"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5109454293"],"corresponding_institution_ids":["https://openalex.org/I142934699"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.01578329,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dice","display_name":"Dice","score":0.8204823732376099},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.685463547706604},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5726282596588135},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5645413994789124},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.515338122844696},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.48914316296577454},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4771520495414734},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4559015929698944},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45509833097457886},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.45433172583580017},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4370039999485016},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36857104301452637},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2417621910572052},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2408420741558075},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20541667938232422},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.1594860851764679}],"concepts":[{"id":"https://openalex.org/C22029948","wikidata":"https://www.wikidata.org/wiki/Q45089","display_name":"Dice","level":2,"score":0.8204823732376099},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.685463547706604},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5726282596588135},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5645413994789124},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.515338122844696},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.48914316296577454},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4771520495414734},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4559015929698944},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45509833097457886},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.45433172583580017},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4370039999485016},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36857104301452637},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2417621910572052},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2408420741558075},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20541667938232422},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.1594860851764679},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ccwc.2017.7868477","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ccwc.2017.7868477","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 7th Annual Computing and Communication Workshop and Conference (CCWC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.44999998807907104}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W289624287","https://openalex.org/W1590134320","https://openalex.org/W1963564212","https://openalex.org/W1966553657","https://openalex.org/W1980738663","https://openalex.org/W2050431855","https://openalex.org/W2058283199","https://openalex.org/W2074673023","https://openalex.org/W2105874609","https://openalex.org/W2107503597","https://openalex.org/W2113775750","https://openalex.org/W2126810113","https://openalex.org/W2141741891","https://openalex.org/W2157588392","https://openalex.org/W2168424560","https://openalex.org/W2291736381","https://openalex.org/W2320182080","https://openalex.org/W2511494427","https://openalex.org/W3151144990","https://openalex.org/W4285719527","https://openalex.org/W6697251056","https://openalex.org/W6700605506","https://openalex.org/W6725784854"],"related_works":["https://openalex.org/W2534277296","https://openalex.org/W3115561514","https://openalex.org/W1639957441","https://openalex.org/W2030745981","https://openalex.org/W2546203629","https://openalex.org/W2112776829","https://openalex.org/W1504951709","https://openalex.org/W4323831463","https://openalex.org/W2907793170","https://openalex.org/W2136142018"],"abstract_inverted_index":{"FinFET":[0],"6T,":[1],"8T,":[2],"Dual":[3],"Interlocked":[4],"Storage":[5],"Cell":[6],"(DICE)":[7],"SRAM":[8,110],"cells":[9,120,131],"and":[10,38,59,129,180,191,202],"Single":[11],"Events":[12],"Upsets":[13],"(SEUs)":[14],"implementations":[15],"are":[16,156],"presented":[17],"in":[18,45,63,88,102,123,249],"this":[19,216,238],"paper.":[20],"Technology":[21],"scaling":[22],"has":[23,113,187],"faced":[24],"many":[25],"challenges":[26],"such":[27,90],"as":[28,91],"higher":[29],"sensitivity":[30,53],"to":[31,54,79,84,134,144,159,227],"SEUs,":[32],"short":[33],"channel":[34],"effects,":[35],"dielectric":[36],"leakage,":[37],"more.":[39],"SEUs":[40,55,61,81,136,160],"play":[41],"a":[42,85,99,141,145,149,219,244,250],"vital":[43],"role":[44],"memory":[46],"system":[47],"stability.":[48],"Memory":[49],"systems":[50],"with":[51,173],"lower":[52],"offer":[56],"better":[57],"stability":[58],"reliability.":[60],"arise":[62],"smaller":[64],"technology":[65],"sizes":[66],"because":[67,212],"of":[68,121,137,148,195,207,215],"reduced":[69],"circuit":[70],"node":[71,76],"capacitance,":[72],"which":[73,222],"makes":[74,239],"the":[75,115,152,162,166,169,199,204,213,225,236,240],"more":[77,157],"prone":[78],"SEUs.":[80],"might":[82],"lead":[83],"catastrophic":[86],"situation":[87],"fields":[89],"medicine,":[92],"aerospace,":[93],"etc.":[94],"Generally,":[95],"FinFETs":[96],"have":[97],"shown":[98,114,188],"great":[100,189],"reduction":[101],"leakage":[103],"current":[104],"for":[105,203,247],"all":[106],"cells.":[107],"The":[108],"8T":[109,130],"LP_INV":[111],"cell":[112,172,217,221,226,243],"best":[116],"overall":[117],"performance":[118,190],"among":[119],"interest":[122],"non-radiated":[124],"environment.":[125,252],"However,":[126],"while":[127],"6T":[128],"were":[132],"able":[133],"resist":[135],"different":[138],"amplitudes":[139],"from":[140],"few":[142,146],"picoseconds":[143],"tenths":[147],"nanosecond":[150],"during":[151,161,198],"hold":[153,200],"state,":[154],"they":[155],"susceptible":[158],"read":[163,208],"operation.":[164],"On":[165],"other":[167],"hand,":[168],"LP":[170,241],"DICE":[171,242],"1":[174],"fin":[175],"per":[176,183],"each":[177,184],"pass":[178],"transistor":[179,186],"2":[181],"fins":[182],"inverter":[185],"immunity":[192],"against":[193],"SEUs-resistance":[194],"several":[196],"nanoseconds":[197],"state":[201,230],"whole":[205],"duration":[206],"state.":[209],"This":[210],"is":[211],"structure":[214],"provides":[218],"backup":[220],"can":[223],"recover":[224],"its":[228],"steady":[229],"even":[231],"if":[232],"an":[233],"SEU":[234],"hits":[235],"cell;":[237],"good":[245],"candidate":[246],"use":[248],"radiated":[251]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}