{"id":"https://openalex.org/W4402474231","doi":"https://doi.org/10.1109/ccece59415.2024.10667237","title":"Measurement and Modeling of GaN HEMTs Operating at 500 \u00b0C","display_name":"Measurement and Modeling of GaN HEMTs Operating at 500 \u00b0C","publication_year":2024,"publication_date":"2024-08-06","ids":{"openalex":"https://openalex.org/W4402474231","doi":"https://doi.org/10.1109/ccece59415.2024.10667237"},"language":"en","primary_location":{"id":"doi:10.1109/ccece59415.2024.10667237","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ccece59415.2024.10667237","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114245307","display_name":"Hao Xue","orcid":"https://orcid.org/0009-0000-3369-8511"},"institutions":[{"id":"https://openalex.org/I4210159778","display_name":"National Research Council Canada","ror":"https://ror.org/04mte1k06","country_code":"CA","type":"government","lineage":["https://openalex.org/I4210159778"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Hao Xue","raw_affiliation_strings":["National Research Council Canada,Ottawa,Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Research Council Canada,Ottawa,Canada","institution_ids":["https://openalex.org/I4210159778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010888392","display_name":"C. Storey","orcid":null},"institutions":[{"id":"https://openalex.org/I4210159778","display_name":"National Research Council Canada","ror":"https://ror.org/04mte1k06","country_code":"CA","type":"government","lineage":["https://openalex.org/I4210159778"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Craig Storey","raw_affiliation_strings":["National Research Council Canada,Ottawa,Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Research Council Canada,Ottawa,Canada","institution_ids":["https://openalex.org/I4210159778"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110830891","display_name":"J.-P. No\u00ebl","orcid":null},"institutions":[{"id":"https://openalex.org/I4210159778","display_name":"National Research Council Canada","ror":"https://ror.org/04mte1k06","country_code":"CA","type":"government","lineage":["https://openalex.org/I4210159778"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Jean-Paul No\u00ebl","raw_affiliation_strings":["National Research Council Canada,Ottawa,Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Research Council Canada,Ottawa,Canada","institution_ids":["https://openalex.org/I4210159778"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029782395","display_name":"Ryan Griffin","orcid":"https://orcid.org/0000-0003-4173-023X"},"institutions":[{"id":"https://openalex.org/I4210159778","display_name":"National Research Council Canada","ror":"https://ror.org/04mte1k06","country_code":"CA","type":"government","lineage":["https://openalex.org/I4210159778"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Ryan Griffin","raw_affiliation_strings":["National Research Council Canada,Ottawa,Canada"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Research Council Canada,Ottawa,Canada","institution_ids":["https://openalex.org/I4210159778"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210159778"],"apc_list":null,"apc_paid":null,"fwci":3.6195,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.9183908,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"532","last_page":"536"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5683624744415283},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5566890835762024},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5029298663139343},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.433931827545166},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09524288773536682}],"concepts":[{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5683624744415283},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5566890835762024},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5029298663139343},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.433931827545166},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09524288773536682},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ccece59415.2024.10667237","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ccece59415.2024.10667237","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Canadian Conference on Electrical and Computer Engineering (CCECE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.49000000953674316,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320314062","display_name":"National Research Council","ror":"https://ror.org/02eq2w707"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W2046724649","https://openalex.org/W2107745940","https://openalex.org/W2110545923","https://openalex.org/W2113460488","https://openalex.org/W2169346090","https://openalex.org/W2179756078","https://openalex.org/W2327579965","https://openalex.org/W2863325548","https://openalex.org/W2931638260","https://openalex.org/W3042517697","https://openalex.org/W3187044735","https://openalex.org/W4221051311","https://openalex.org/W4235405531","https://openalex.org/W4323644387","https://openalex.org/W4327725273","https://openalex.org/W4377964908","https://openalex.org/W4385223290","https://openalex.org/W4386737446","https://openalex.org/W4387197165","https://openalex.org/W6674871632","https://openalex.org/W6734451732"],"related_works":["https://openalex.org/W2004911196","https://openalex.org/W2000487630","https://openalex.org/W2654716541","https://openalex.org/W1988167421","https://openalex.org/W2109359929","https://openalex.org/W2037936622","https://openalex.org/W2533157014","https://openalex.org/W4297582192","https://openalex.org/W4385624134","https://openalex.org/W1989313672"],"abstract_inverted_index":{"Device":[0],"characterization":[1],"and":[2,58,74,88],"modeling,":[3],"including":[4],"RF":[5],"performance,":[6],"of":[7,32,52],"AlGaN/GaN":[8],"high-electron-mobility":[9],"transistors":[10],"(HEMTs)":[11],"from":[12,44],"22":[13,45,56],"\u00b0C":[14,17,37,57],"to":[15,76,97],"500":[16,36,62],"are":[18],"presented":[19],"in":[20,107],"this":[21],"paper.":[22],"The":[23,81],"HEMTs":[24],"measured":[25],"achieved":[26],"a":[27,91],"maximum":[28],"drain":[29],"current":[30],"density":[31],"580":[33],"mA/mm":[34],"at":[35,55,61,84],"which":[38],"is":[39,72,86],"less":[40],"than":[41],"50%":[42],"reduction":[43],"\u00b0C.":[46,63],"Small-signal":[47],"on-wafer":[48],"measurement":[49],"shows":[50],"fT/fMAXvalues":[51],"18.8/14.1":[53],"GHz":[54,60],"5.3/3.3":[59],"An":[64],"MIT":[65],"Virtual":[66],"Source":[67],"GaN":[68],"FET":[69],"(MVSG)":[70],"model":[71,100],"extracted":[73],"optimized":[75],"capture":[77],"the":[78,98],"device":[79,82],"behavior.":[80],"operation":[83],"high-temperature":[85],"studied":[87],"analyzed.":[89],"Adding":[90],"temperature":[92],"dependent":[93],"extrinsic":[94],"RC":[95],"network":[96],"MVSG":[99],"greatly":[101],"improved":[102],"small-signal":[103],"modeling":[104],"for":[105],"devices":[106],"extreme":[108],"environments.":[109]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}