{"id":"https://openalex.org/W2096355212","doi":"https://doi.org/10.1109/ccece.2009.5090262","title":"Self-powered supplies for SCR, IGBT, GTO and IGCT devices: A review of the state of the art","display_name":"Self-powered supplies for SCR, IGBT, GTO and IGCT devices: A review of the state of the art","publication_year":2009,"publication_date":"2009-05-01","ids":{"openalex":"https://openalex.org/W2096355212","doi":"https://doi.org/10.1109/ccece.2009.5090262","mag":"2096355212"},"language":"en","primary_location":{"id":"doi:10.1109/ccece.2009.5090262","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ccece.2009.5090262","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Canadian Conference on Electrical and Computer Engineering","raw_type":"proceedings-article"},"type":"review","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5002002379","display_name":"Jahangir Afsharian","orcid":"https://orcid.org/0000-0001-7913-2214"},"institutions":[{"id":"https://openalex.org/I530967","display_name":"Toronto Metropolitan University","ror":"https://ror.org/05g13zd79","country_code":"CA","type":"education","lineage":["https://openalex.org/I530967"]}],"countries":["CA"],"is_corresponding":true,"raw_author_name":"Jahangir Afsharian","raw_affiliation_strings":["Ryerson University, Toronto, ONT, Canada","Ryerson University Toronto ON Canada"],"affiliations":[{"raw_affiliation_string":"Ryerson University, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I530967"]},{"raw_affiliation_string":"Ryerson University Toronto ON Canada","institution_ids":["https://openalex.org/I530967"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100742653","display_name":"Bin Wu","orcid":"https://orcid.org/0000-0001-8166-6020"},"institutions":[{"id":"https://openalex.org/I530967","display_name":"Toronto Metropolitan University","ror":"https://ror.org/05g13zd79","country_code":"CA","type":"education","lineage":["https://openalex.org/I530967"]}],"countries":["CA"],"is_corresponding":false,"raw_author_name":"Bin Wu","raw_affiliation_strings":["Ryerson University, Toronto, ONT, Canada","Ryerson University Toronto ON Canada"],"affiliations":[{"raw_affiliation_string":"Ryerson University, Toronto, ONT, Canada","institution_ids":["https://openalex.org/I530967"]},{"raw_affiliation_string":"Ryerson University Toronto ON Canada","institution_ids":["https://openalex.org/I530967"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019055429","display_name":"Navid R. Zargari","orcid":"https://orcid.org/0000-0001-8747-1507"},"institutions":[{"id":"https://openalex.org/I4210127883","display_name":"Rockwell Automation (Canada)","ror":"https://ror.org/02qm4q539","country_code":"CA","type":"company","lineage":["https://openalex.org/I4210127883","https://openalex.org/I57053284"]},{"id":"https://openalex.org/I57053284","display_name":"Rockwell Automation (United States)","ror":"https://ror.org/01sx1pm50","country_code":"US","type":"company","lineage":["https://openalex.org/I57053284"]}],"countries":["CA","US"],"is_corresponding":false,"raw_author_name":"N. Zargari","raw_affiliation_strings":["Rockwell Automation Canada, Inc., Cambridge, ONT, Canada","Rockwell Autom. Canada, Cambridge, ON, Canada"],"affiliations":[{"raw_affiliation_string":"Rockwell Automation Canada, Inc., Cambridge, ONT, Canada","institution_ids":["https://openalex.org/I4210127883"]},{"raw_affiliation_string":"Rockwell Autom. Canada, Cambridge, ON, Canada","institution_ids":["https://openalex.org/I57053284"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5002002379"],"corresponding_institution_ids":["https://openalex.org/I530967"],"apc_list":null,"apc_paid":null,"fwci":1.5308,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.85653158,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"920","last_page":"925"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10223","display_name":"Microgrid Control and Optimization","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2207","display_name":"Control and Systems Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10223","display_name":"Microgrid Control and Optimization","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2207","display_name":"Control and Systems Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10663","display_name":"Advanced Battery Technologies Research","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2203","display_name":"Automotive Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/integrated-gate-commutated-thyristor","display_name":"Integrated gate-commutated thyristor","score":0.9057130217552185},{"id":"https://openalex.org/keywords/thyristor","display_name":"Thyristor","score":0.8382877111434937},{"id":"https://openalex.org/keywords/insulated-gate-bipolar-transistor","display_name":"Insulated-gate bipolar transistor","score":0.7642985582351685},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.7333278656005859},{"id":"https://openalex.org/keywords/gate-turn-off-thyristor","display_name":"Gate turn-off thyristor","score":0.6611176133155823},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5986664891242981},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5862101316452026},{"id":"https://openalex.org/keywords/current-injection-technique","display_name":"Current injection technique","score":0.49404147267341614},{"id":"https://openalex.org/keywords/safe-operating-area","display_name":"Safe operating area","score":0.4469800591468811},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.44613415002822876},{"id":"https://openalex.org/keywords/state","display_name":"State (computer science)","score":0.4381561577320099},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4012622535228729},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.396767795085907},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3726325035095215},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3535201847553253},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2126922607421875},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17401745915412903},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.1704775094985962},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07044869661331177}],"concepts":[{"id":"https://openalex.org/C194777113","wikidata":"https://www.wikidata.org/wiki/Q1066563","display_name":"Integrated gate-commutated thyristor","level":4,"score":0.9057130217552185},{"id":"https://openalex.org/C121922863","wikidata":"https://www.wikidata.org/wiki/Q180805","display_name":"Thyristor","level":3,"score":0.8382877111434937},{"id":"https://openalex.org/C28285623","wikidata":"https://www.wikidata.org/wiki/Q176110","display_name":"Insulated-gate bipolar transistor","level":3,"score":0.7642985582351685},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.7333278656005859},{"id":"https://openalex.org/C161638520","wikidata":"https://www.wikidata.org/wiki/Q1189770","display_name":"Gate turn-off thyristor","level":5,"score":0.6611176133155823},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5986664891242981},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5862101316452026},{"id":"https://openalex.org/C25230419","wikidata":"https://www.wikidata.org/wiki/Q5195101","display_name":"Current injection technique","level":5,"score":0.49404147267341614},{"id":"https://openalex.org/C186339688","wikidata":"https://www.wikidata.org/wiki/Q233523","display_name":"Safe operating area","level":4,"score":0.4469800591468811},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.44613415002822876},{"id":"https://openalex.org/C48103436","wikidata":"https://www.wikidata.org/wiki/Q599031","display_name":"State (computer science)","level":2,"score":0.4381561577320099},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4012622535228729},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.396767795085907},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3726325035095215},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3535201847553253},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2126922607421875},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17401745915412903},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.1704775094985962},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07044869661331177},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ccece.2009.5090262","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ccece.2009.5090262","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 Canadian Conference on Electrical and Computer Engineering","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8100000023841858,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1484058601","https://openalex.org/W1496805429","https://openalex.org/W1559676058","https://openalex.org/W1579357411","https://openalex.org/W1582882118","https://openalex.org/W1588259706","https://openalex.org/W1600586906","https://openalex.org/W1940084057","https://openalex.org/W2101765521","https://openalex.org/W2116883763","https://openalex.org/W2120250479","https://openalex.org/W2133319228","https://openalex.org/W2138518238","https://openalex.org/W2149691906","https://openalex.org/W2158190196","https://openalex.org/W2161603915","https://openalex.org/W2167914840","https://openalex.org/W2169439183","https://openalex.org/W2397295659","https://openalex.org/W4307768418","https://openalex.org/W6629572585","https://openalex.org/W6633474451","https://openalex.org/W6677914064","https://openalex.org/W6846662291"],"related_works":["https://openalex.org/W1944107569","https://openalex.org/W2112248490","https://openalex.org/W2126068003","https://openalex.org/W2027318559","https://openalex.org/W2189570643","https://openalex.org/W1924233543","https://openalex.org/W4242065833","https://openalex.org/W4245047671","https://openalex.org/W2543739606","https://openalex.org/W1968581984"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"self-powered":[3],"supply":[4],"(SPS)":[5],"techniques":[6,67],"for":[7],"gate":[8],"drivers":[9],"of":[10,31,49,58,65],"different":[11],"high":[12],"power":[13,43,59],"switches":[14],"such":[15],"as":[16],"SCRs,":[17],"IGBTs,":[18],"GTOs,":[19],"IGCTs,":[20],"MOSFETs,":[21],"and":[22,28,53,55,63],"ETOs":[23],"are":[24,37,68],"surveyed.":[25],"System":[26],"configurations":[27],"operation":[29],"principles":[30],"selected":[32],"proposals":[33],"in":[34],"the":[35,41,47],"literature":[36],"demonstrated.":[38],"Compared":[39],"to":[40],"external":[42],"supplies,":[44],"SPSs":[45],"bear":[46],"advantages":[48],"lower":[50],"system":[51],"cost":[52],"size,":[54],"increased":[56],"reliability":[57],"devices.":[60],"The":[61],"merits":[62],"drawbacks":[64],"some":[66],"also":[69],"discussed.":[70]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}