{"id":"https://openalex.org/W4406265212","doi":"https://doi.org/10.1109/cce62852.2024.10771020","title":"Performance Assessment of Nanoscale SiGe High-k Negative Capacitance Junctionless GAA MOSFETs","display_name":"Performance Assessment of Nanoscale SiGe High-k Negative Capacitance Junctionless GAA MOSFETs","publication_year":2024,"publication_date":"2024-10-23","ids":{"openalex":"https://openalex.org/W4406265212","doi":"https://doi.org/10.1109/cce62852.2024.10771020"},"language":"en","primary_location":{"id":"doi:10.1109/cce62852.2024.10771020","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cce62852.2024.10771020","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 21st International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5091662091","display_name":"R. Ouchen","orcid":null},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":true,"raw_author_name":"R. Ouchen","raw_affiliation_strings":["University of Batna 2,LEA,Batna,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Batna 2,LEA,Batna,Algeria","institution_ids":["https://openalex.org/I162489102"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5039824660","display_name":"I. Rahmani","orcid":null},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]},{"id":"https://openalex.org/I4210086178","display_name":"Research Center in Industrial Technologies","ror":"https://ror.org/00qhvgf79","country_code":"DZ","type":"facility","lineage":["https://openalex.org/I4210086178"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"I. Rahmani","raw_affiliation_strings":["University of Batna 2, Research Center in Industrial Technologies CRTI,Cheraga,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Batna 2, Research Center in Industrial Technologies CRTI,Cheraga,Algeria","institution_ids":["https://openalex.org/I4210086178","https://openalex.org/I162489102"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029535671","display_name":"H. Ferhati","orcid":null},"institutions":[{"id":"https://openalex.org/I3132180716","display_name":"Larbi Ben M'hidi University of Oum El Bouaghi","ror":"https://ror.org/0034tbg85","country_code":"DZ","type":"education","lineage":["https://openalex.org/I3132180716"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"H. Ferhati","raw_affiliation_strings":["University of Larbi Ben M&#x0027;hidi,ISTA,Oum El Bouaghi,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Larbi Ben M&#x0027;hidi,ISTA,Oum El Bouaghi,Algeria","institution_ids":["https://openalex.org/I3132180716"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5044226348","display_name":"F. Djeffal","orcid":"https://orcid.org/0000-0003-0742-5864"},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"F. Djeffal","raw_affiliation_strings":["University of Batna 2,LEA,Batna,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Batna 2,LEA,Batna,Algeria","institution_ids":["https://openalex.org/I162489102"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5091662091"],"corresponding_institution_ids":["https://openalex.org/I162489102"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.23510035,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7322840094566345},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7084043025970459},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.6929604411125183},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6238890290260315},{"id":"https://openalex.org/keywords/negative-impedance-converter","display_name":"Negative impedance converter","score":0.5125489234924316},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.4669286906719208},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.42549705505371094},{"id":"https://openalex.org/keywords/high-\u03ba-dielectric","display_name":"High-\u03ba dielectric","score":0.4183671176433563},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.1950908899307251},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.17912650108337402},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.16438397765159607},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.0740543007850647},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07110768556594849},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.05492106080055237},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.042035847902297974}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7322840094566345},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7084043025970459},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.6929604411125183},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6238890290260315},{"id":"https://openalex.org/C7729237","wikidata":"https://www.wikidata.org/wiki/Q1724261","display_name":"Negative impedance converter","level":4,"score":0.5125489234924316},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.4669286906719208},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.42549705505371094},{"id":"https://openalex.org/C16317505","wikidata":"https://www.wikidata.org/wiki/Q132013","display_name":"High-\u03ba dielectric","level":3,"score":0.4183671176433563},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.1950908899307251},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.17912650108337402},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.16438397765159607},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0740543007850647},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07110768556594849},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.05492106080055237},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.042035847902297974},{"id":"https://openalex.org/C144655898","wikidata":"https://www.wikidata.org/wiki/Q1161128","display_name":"Voltage source","level":3,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cce62852.2024.10771020","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cce62852.2024.10771020","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 21st International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6299999952316284,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2354985527","https://openalex.org/W1753561925","https://openalex.org/W1993659809","https://openalex.org/W3160714115","https://openalex.org/W3086500945","https://openalex.org/W2044479636","https://openalex.org/W2390027245","https://openalex.org/W2294484858","https://openalex.org/W1965225743","https://openalex.org/W2883136681"],"abstract_inverted_index":{"Our":[0],"approach":[1],"in":[2,41,175],"this":[3],"paper":[4],"aims":[5],"at":[6],"investigating":[7],"the":[8,19,42,54,68,99,109,114,122,130,149,167],"impact":[9],"of":[10,21,47,67,108,124,140],"combining":[11],"high-k":[12,48,126],"dielectric":[13,127],"materials":[14,17,52,128],"with":[15,103,158],"ferroelectric":[16,51,153],"on":[18,113,129],"performance":[20,66,117,132],"silicon-germanium":[22],"(SiGe)":[23],"Junctionless":[24],"Gate-All-Around":[25],"(GAA)":[26],"Field-Effect":[27],"Transistors":[28],"(SiGe-High-k-NCJLGAA-FETs).":[29],"This":[30],"offers":[31],"unique":[32],"advantage":[33],"and":[34,50,78,88,155,177],"can":[35],"lead":[36],"to":[37],"a":[38],"significant":[39],"improvement":[40],"device":[43,55,70,115,131,170],"performance.":[44],"The":[45,64,85,106],"combination":[46],"dielectrics":[49],"enhances":[53],"electrical":[56,65,116],"properties":[57],"by":[58,74,97],"providing":[59],"enhanced":[60],"channel":[61,94,157],"electrostatic":[62],"behavior.":[63],"considered":[69],"(SiGe-High-k-NCJLGAA-FETs)":[71],"is":[72,118,133,143],"investigated":[73],"developing":[75],"combined":[76],"analytical":[77],"numerical":[79],"models":[80],"using":[81,148],"ATLAS":[82],"2D":[83],"simulator.":[84],"surface":[86],"potential":[87],"subthreshold":[89],"swing":[90,137],"models,":[91],"including":[92],"short":[93],"are":[95],"developed":[96],"solving":[98],"Landau-Khalatnikov":[100],"(L-K)":[101],"equation":[102],"Poisson's":[104],"equation.":[105],"effect":[107],"Ge":[110],"mole":[111],"fraction":[112],"investigated.":[119],"In":[120],"addition,":[121],"influence":[123],"various":[125],"analyzed.":[134],"A":[135],"minimum":[136],"factor":[138],"(SS)":[139],"31.2":[141],"mV/decade":[142],"recorded":[144],"for":[145,173],"L=30":[146],"nm":[147],"doped-hafnium":[150],"oxide":[151],"as":[152],"material":[154],"SiGe":[156],"TiO<inf":[159],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[160],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>":[161],"gate":[162],"oxide.":[163],"These":[164],"enhancements":[165],"make":[166],"optimized":[168],"transistor":[169],"highly":[171],"approriate":[172],"usage":[174],"low-power":[176],"digital":[178],"nanoelectronic":[179],"applications.":[180]},"counts_by_year":[],"updated_date":"2025-12-21T01:58:51.020947","created_date":"2025-10-10T00:00:00"}