{"id":"https://openalex.org/W4406265215","doi":"https://doi.org/10.1109/cce62852.2024.10770889","title":"Effect of the Thermal Annealing Temperature on the Composition and Luminescent Properties of Silicon Rich-Nitride (SRN) and -Oxide (SRO) Films","display_name":"Effect of the Thermal Annealing Temperature on the Composition and Luminescent Properties of Silicon Rich-Nitride (SRN) and -Oxide (SRO) Films","publication_year":2024,"publication_date":"2024-10-23","ids":{"openalex":"https://openalex.org/W4406265215","doi":"https://doi.org/10.1109/cce62852.2024.10770889"},"language":"en","primary_location":{"id":"doi:10.1109/cce62852.2024.10770889","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cce62852.2024.10770889","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 21st International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050372596","display_name":"A. Morales\u2013S\u00e1nchez","orcid":"https://orcid.org/0000-0003-3656-2497"},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"Alfredo Morales S\u00e1nchez","raw_affiliation_strings":["INAOE,Electronic Department,Puebla,Mexico"],"affiliations":[{"raw_affiliation_string":"INAOE,Electronic Department,Puebla,Mexico","institution_ids":["https://openalex.org/I39824353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031026359","display_name":"Jos\u00e9 Juan Avil\u00e9s Bravo","orcid":null},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Jos\u00e9 Juan Avil\u00e9s Bravo","raw_affiliation_strings":["INAOE,Electronic Department,Puebla,Mexico"],"affiliations":[{"raw_affiliation_string":"INAOE,Electronic Department,Puebla,Mexico","institution_ids":["https://openalex.org/I39824353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5098733299","display_name":"Braulio Palacios M\u00e1rquez","orcid":null},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Braulio Palacios M\u00e1rquez","raw_affiliation_strings":["INAOE,Electronic Department,Puebla,Mexico"],"affiliations":[{"raw_affiliation_string":"INAOE,Electronic Department,Puebla,Mexico","institution_ids":["https://openalex.org/I39824353"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054910232","display_name":"Karim Monfil Leyva","orcid":"https://orcid.org/0000-0002-4370-5655"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Karim Monfil Leyva","raw_affiliation_strings":["BUAP,CIDS-ICUAP,Puebla,Mexico"],"affiliations":[{"raw_affiliation_string":"BUAP,CIDS-ICUAP,Puebla,Mexico","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086976474","display_name":"Mario Moreno","orcid":"https://orcid.org/0000-0001-5264-8296"},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Mario Moreno Moreno","raw_affiliation_strings":["INAOE,Electronic Department,Puebla,Mexico"],"affiliations":[{"raw_affiliation_string":"INAOE,Electronic Department,Puebla,Mexico","institution_ids":["https://openalex.org/I39824353"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021660565","display_name":"Luis Hern\u00e1ndez-Mart\u00ednez","orcid":"https://orcid.org/0000-0001-7178-7929"},"institutions":[{"id":"https://openalex.org/I39824353","display_name":"National Institute of Astrophysics, Optics and Electronics","ror":"https://ror.org/00bpmmc63","country_code":"MX","type":"facility","lineage":["https://openalex.org/I39824353"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Luis Hernandez Mart\u00ednez","raw_affiliation_strings":["INAOE,Electronic Department,Puebla,Mexico"],"affiliations":[{"raw_affiliation_string":"INAOE,Electronic Department,Puebla,Mexico","institution_ids":["https://openalex.org/I39824353"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5050372596"],"corresponding_institution_ids":["https://openalex.org/I39824353"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.23861202,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9847000241279602,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.71928870677948},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7020272016525269},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.6382640600204468},{"id":"https://openalex.org/keywords/luminescence","display_name":"Luminescence","score":0.6350823044776917},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"Silicon nitride","score":0.595811128616333},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5814683437347412},{"id":"https://openalex.org/keywords/silicon-oxide","display_name":"Silicon oxide","score":0.56833815574646},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.5672098398208618},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.4858536422252655},{"id":"https://openalex.org/keywords/chemical-engineering","display_name":"Chemical engineering","score":0.42518261075019836},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40465447306632996},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.25567108392715454},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.17252090573310852},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.0955430269241333},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.08888283371925354}],"concepts":[{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.71928870677948},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7020272016525269},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.6382640600204468},{"id":"https://openalex.org/C148869448","wikidata":"https://www.wikidata.org/wiki/Q184240","display_name":"Luminescence","level":2,"score":0.6350823044776917},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.595811128616333},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5814683437347412},{"id":"https://openalex.org/C2779105228","wikidata":"https://www.wikidata.org/wiki/Q2286029","display_name":"Silicon oxide","level":4,"score":0.56833815574646},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.5672098398208618},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.4858536422252655},{"id":"https://openalex.org/C42360764","wikidata":"https://www.wikidata.org/wiki/Q83588","display_name":"Chemical engineering","level":1,"score":0.42518261075019836},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40465447306632996},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.25567108392715454},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.17252090573310852},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0955430269241333},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.08888283371925354},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cce62852.2024.10770889","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cce62852.2024.10770889","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 21st International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2033858404","https://openalex.org/W2014623555","https://openalex.org/W4389250741","https://openalex.org/W1967028337","https://openalex.org/W2010802203","https://openalex.org/W2004499318","https://openalex.org/W2040574712","https://openalex.org/W2135033373","https://openalex.org/W2006846697","https://openalex.org/W1971277071"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"a":[3,120],"study":[4],"of":[5,9,57,89],"the":[6,39,58,74,87,95],"optical":[7],"properties":[8],"silicon":[10,15,96],"rich":[11,16],"oxide":[12],"(SRO)":[13],"and":[14,33,48,76,91],"nitride":[17],"(SRN)":[18],"films":[19,65,78,106,109,118],"deposited":[20],"by":[21,37,93],"low-pressure":[22],"chemical":[23],"vapor":[24],"deposition":[25],"(LPCVD)":[26],"is":[27],"presented.":[28],"Silicon":[29],"excess":[30],"in":[31,86,103],"SRO":[32,75,92,108],"SRN":[34,77,90,105,117],"was":[35,66,101],"obtained":[36],"changing":[38,94],"flow":[40],"ratio":[41],"between":[42],"N<inf":[43],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[44,46,50,52],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>O/SiH<inf":[45],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</inf>":[47],"NH<inf":[49],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</inf>/SiH<inf":[51],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">4</inf>,":[53],"respectively.":[54],"The":[55],"effect":[56],"annealing":[59],"temperature":[60],"on":[61],"both":[62],"Si-rich":[63],"dielectric":[64],"studied.":[67],"Infrared":[68],"spectroscopy":[69],"showed":[70],"microstructural":[71],"changes":[72],"within":[73],"after":[79],"thermal":[80],"annealing.":[81],"Transmittance":[82],"measurements":[83],"exhibit":[84],"variations":[85],"bandgap":[88],"excess.":[97],"Maximum":[98],"luminescence":[99],"intensity":[100],"observed":[102],"as-deposited":[104],"while":[107],"need":[110],"to":[111],"be":[112],"annealed":[113],"at":[114],"1150\u00b0C.":[115],"Therefore,":[116],"are":[119],"potential":[121],"candidate":[122],"for":[123],"optoelectronic":[124],"devices.":[125]},"counts_by_year":[],"updated_date":"2025-12-27T23:08:20.325037","created_date":"2025-10-10T00:00:00"}