{"id":"https://openalex.org/W3115653760","doi":"https://doi.org/10.1109/cce50788.2020.9299156","title":"A Method to Model the Volume Charge Density in a Multiple-Input Floating-Gate MOS Transistor","display_name":"A Method to Model the Volume Charge Density in a Multiple-Input Floating-Gate MOS Transistor","publication_year":2020,"publication_date":"2020-11-11","ids":{"openalex":"https://openalex.org/W3115653760","doi":"https://doi.org/10.1109/cce50788.2020.9299156","mag":"3115653760"},"language":"en","primary_location":{"id":"doi:10.1109/cce50788.2020.9299156","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cce50788.2020.9299156","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 17th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5063003898","display_name":"Francisco Plascencia J\u00e1uregui","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":true,"raw_author_name":"Francisco Plascencia Jauregui","raw_affiliation_strings":["Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077126714","display_name":"Santiago Medina Vazquez","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Santiago Medina Vazquez","raw_affiliation_strings":["Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062610888","display_name":"Edwin Becerra Alvarez","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Edwin Becerra Alvarez","raw_affiliation_strings":["Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007610921","display_name":"Jose Arce Zavala","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Jose Arce Zavala","raw_affiliation_strings":["Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"Centro Universitario de Ciencias Exactas e Ingenierias, Universidad de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075776498","display_name":"Sandra Flores Ruiz","orcid":null},"institutions":[{"id":"https://openalex.org/I193181351","display_name":"Universidad de Guadalajara","ror":"https://ror.org/043xj7k26","country_code":"MX","type":"education","lineage":["https://openalex.org/I193181351"]}],"countries":["MX"],"is_corresponding":false,"raw_author_name":"Sandra Flores Ruiz","raw_affiliation_strings":["Programa Universitario de Lenguas Extranjeras, Universidad de Guadalajara, Guadalajara, Mexico"],"affiliations":[{"raw_affiliation_string":"Programa Universitario de Lenguas Extranjeras, Universidad de Guadalajara, Guadalajara, Mexico","institution_ids":["https://openalex.org/I193181351"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5063003898"],"corresponding_institution_ids":["https://openalex.org/I193181351"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.13964891,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"8","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/poissons-equation","display_name":"Poisson's equation","score":0.7402770519256592},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6834739446640015},{"id":"https://openalex.org/keywords/charge-density","display_name":"Charge density","score":0.5748584270477295},{"id":"https://openalex.org/keywords/charge-control","display_name":"Charge control","score":0.5707680583000183},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5461413264274597},{"id":"https://openalex.org/keywords/charge","display_name":"Charge (physics)","score":0.5345648527145386},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5156273245811462},{"id":"https://openalex.org/keywords/volume","display_name":"Volume (thermodynamics)","score":0.45299291610717773},{"id":"https://openalex.org/keywords/electric-potential","display_name":"Electric potential","score":0.45046254992485046},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.4133871793746948},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36671000719070435},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35967883467674255},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3507540225982666},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3481956720352173},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33830830454826355},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3352260887622833},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1625763475894928},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.12728869915008545}],"concepts":[{"id":"https://openalex.org/C96716743","wikidata":"https://www.wikidata.org/wiki/Q827688","display_name":"Poisson's equation","level":2,"score":0.7402770519256592},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6834739446640015},{"id":"https://openalex.org/C150708132","wikidata":"https://www.wikidata.org/wiki/Q744771","display_name":"Charge density","level":2,"score":0.5748584270477295},{"id":"https://openalex.org/C2777681924","wikidata":"https://www.wikidata.org/wiki/Q5074262","display_name":"Charge control","level":4,"score":0.5707680583000183},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5461413264274597},{"id":"https://openalex.org/C188082385","wikidata":"https://www.wikidata.org/wiki/Q73792","display_name":"Charge (physics)","level":2,"score":0.5345648527145386},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5156273245811462},{"id":"https://openalex.org/C20556612","wikidata":"https://www.wikidata.org/wiki/Q4469374","display_name":"Volume (thermodynamics)","level":2,"score":0.45299291610717773},{"id":"https://openalex.org/C58570533","wikidata":"https://www.wikidata.org/wiki/Q55451","display_name":"Electric potential","level":3,"score":0.45046254992485046},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.4133871793746948},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36671000719070435},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35967883467674255},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3507540225982666},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3481956720352173},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33830830454826355},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3352260887622833},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1625763475894928},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.12728869915008545},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C555008776","wikidata":"https://www.wikidata.org/wiki/Q267298","display_name":"Battery (electricity)","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/cce50788.2020.9299156","is_oa":false,"landing_page_url":"https://doi.org/10.1109/cce50788.2020.9299156","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 17th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.699999988079071,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W82478680","https://openalex.org/W432398127","https://openalex.org/W1533614470","https://openalex.org/W1607716758","https://openalex.org/W2044969095","https://openalex.org/W2064794740","https://openalex.org/W2079826846","https://openalex.org/W2080240036","https://openalex.org/W2097351633","https://openalex.org/W2129687167","https://openalex.org/W2160142098","https://openalex.org/W2175608591","https://openalex.org/W2794061657","https://openalex.org/W2798359519","https://openalex.org/W2919095146","https://openalex.org/W4301018393","https://openalex.org/W6631825456","https://openalex.org/W6636302668"],"related_works":["https://openalex.org/W2072916511","https://openalex.org/W1569383042","https://openalex.org/W1850091458","https://openalex.org/W2018255908","https://openalex.org/W4285292896","https://openalex.org/W4312332783","https://openalex.org/W4399977619","https://openalex.org/W2365176121","https://openalex.org/W2171169786","https://openalex.org/W2465471217"],"abstract_inverted_index":{"We":[0,30],"present":[1],"a":[2,38,84,91,123],"methodology":[3],"to":[4,64,89,94,116,153],"model":[5],"the":[6,11,14,23,48,58,72,77,96,100,105,132,135,140],"volume":[7,73,106,127,146],"charge":[8,74,107,128,147],"density":[9,75,108,148],"in":[10,76,119],"substrate":[12],"of":[13,126,134],"Multiple-input":[15],"Floating-Gate":[16],"MOS":[17],"(MIFGMOS)":[18],"transistor.":[19],"This":[20],"method":[21,85],"considers":[22],"MIFGMOS":[24,49,78],"as":[25],"an":[26],"analog":[27],"CMOS":[28],"device.":[29],"based":[31,86],"our":[32],"procedure":[33],"on":[34,42,57,87,99,110,131],"Maxwell's":[35],"Equations":[36],"through":[37],"Poisson":[39],"Equation":[40],"implementation":[41],"Matlab.":[43],"The":[44,137],"charges":[45],"generated":[46],"during":[47],"polarization,":[50],"which":[51,113,120],"is":[52],"made":[53],"by":[54],"applying":[55],"voltages":[56,133],"Control":[59],"Gates":[60],"(CG),":[61],"are":[62],"used":[63],"calculate":[65],"electric":[66,68],"fields,":[67],"potentials,":[69],"and":[70,145,149,155],"finally,":[71],"transistor":[79],"channel.":[80],"Moreover,":[81],"we":[82,103],"introduce":[83],"coordinates":[88],"generate":[90],"mathematical":[92],"function":[93],"describe":[95],"electric-potential":[97],"behavior":[98,109],"substrate.":[101],"Finally,":[102],"show":[104],"three":[111],"graphics,":[112],"allows":[114],"us":[115,152],"predict":[117],"regions":[118],"will":[121,150],"be":[122],"great":[124],"amount":[125],"density,":[129],"depending":[130],"terminals.":[136],"former":[138],"reveals":[139],"relationship":[141],"between":[142],"control":[143],"gates":[144],"allow":[151],"understand":[154],"analyze":[156],"some":[157],"superior":[158],"order":[159],"phenomena.":[160]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}