{"id":"https://openalex.org/W4388623351","doi":"https://doi.org/10.1109/bcicts54660.2023.10310903","title":"A 12\u2013162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination","display_name":"A 12\u2013162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination","publication_year":2023,"publication_date":"2023-10-16","ids":{"openalex":"https://openalex.org/W4388623351","doi":"https://doi.org/10.1109/bcicts54660.2023.10310903"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts54660.2023.10310903","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts54660.2023.10310903","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5104197174","display_name":"Justin J. Kim","orcid":"https://orcid.org/0009-0007-3203-7165"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Justin J. Kim","raw_affiliation_strings":["University of California Santa Barbara,Santa Barbara,CA","University of California Santa Barbara, Santa Barbara, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California Santa Barbara,Santa Barbara,CA","institution_ids":["https://openalex.org/I154570441"]},{"raw_affiliation_string":"University of California Santa Barbara, Santa Barbara, CA","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101994619","display_name":"Wonho Lee","orcid":"https://orcid.org/0000-0001-8159-9067"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Wonho Lee","raw_affiliation_strings":["PRL PCR, Intel Labs,Hillsboro,OR","PRL PCR, Intel Labs, Hillsboro, OR"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"PRL PCR, Intel Labs,Hillsboro,OR","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"PRL PCR, Intel Labs, Hillsboro, OR","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024558404","display_name":"James F. Buckwalter","orcid":"https://orcid.org/0000-0002-9390-0897"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"James F. Buckwalter","raw_affiliation_strings":["University of California Santa Barbara,Santa Barbara,CA","University of California Santa Barbara, Santa Barbara, CA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of California Santa Barbara,Santa Barbara,CA","institution_ids":["https://openalex.org/I154570441"]},{"raw_affiliation_string":"University of California Santa Barbara, Santa Barbara, CA","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.1227,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.45529932,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"171","last_page":"174"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7736615538597107},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.7521308660507202},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.6301053762435913},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5591579079627991},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.5586884021759033},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5411533117294312},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5300207734107971},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5206674337387085},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4816128611564636},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.479894757270813},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.41664111614227295},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.39380133152008057},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3759644329547882},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.36991238594055176},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3518139123916626},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.34272879362106323},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2825670540332794},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.2351130247116089},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.19680452346801758},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.16696077585220337},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08185213804244995}],"concepts":[{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7736615538597107},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7521308660507202},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.6301053762435913},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5591579079627991},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.5586884021759033},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5411533117294312},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5300207734107971},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5206674337387085},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4816128611564636},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.479894757270813},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.41664111614227295},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.39380133152008057},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3759644329547882},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.36991238594055176},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3518139123916626},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34272879362106323},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2825670540332794},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.2351130247116089},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.19680452346801758},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.16696077585220337},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08185213804244995}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts54660.2023.10310903","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts54660.2023.10310903","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8799999952316284,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1615762817","https://openalex.org/W1927489521","https://openalex.org/W2113101755","https://openalex.org/W2121501688","https://openalex.org/W2177717147","https://openalex.org/W2476699116","https://openalex.org/W2513371118","https://openalex.org/W2582528974","https://openalex.org/W3018904982","https://openalex.org/W4210618620","https://openalex.org/W4308087278","https://openalex.org/W4376150558"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2048420745","https://openalex.org/W2082944690","https://openalex.org/W2263373136","https://openalex.org/W1914349328","https://openalex.org/W2160067645","https://openalex.org/W2023334077","https://openalex.org/W2005494397","https://openalex.org/W2104885411","https://openalex.org/W2339836056"],"abstract_inverted_index":{"A":[0],"low":[1],"power":[2,69],"12\u2013162":[3],"GHz":[4],"distributed":[5],"amplifier":[6],"(DA)":[7],"is":[8,19,74],"demonstrated":[9],"with":[10,21,77],"an":[11,44],"average":[12],"gain":[13],"of":[14,63,71,81],"25":[15],"dB.":[16],"This":[17],"circuit":[18,58],"realized":[20],"a":[22,27,64,78],"NMOS/HBT":[23],"cascode":[24],"cell":[25],"using":[26],"45-nm":[28],"BiCMOS":[29],"Silicon-on-Insulator":[30],"(SOI)":[31],"process.":[32,66],"The":[33,67],"DA":[34,73],"utilizes":[35],"the":[36,49,57,61,72],"high":[37],"<tex":[38,83],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[39,84],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\mathrm{f}_{\\max}$</tex>":[40],"CMOS":[41],"to":[42,53,59],"provide":[43],"active":[45],"bias":[46],"termination":[47],"on":[48],"input":[50],"in":[51,56],"order":[52],"add":[54],"tunability":[55],"mitigate":[60],"unknowns":[62],"new":[65],"total":[68],"consumption":[70],"215":[75],"mW":[76],"core":[79],"area":[80],"0.45":[82],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">$\\text{mm}^{2}$</tex>":[85],".":[86]},"counts_by_year":[{"year":2024,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}