{"id":"https://openalex.org/W4388623768","doi":"https://doi.org/10.1109/bcicts54660.2023.10310790","title":"Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode","display_name":"Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode","publication_year":2023,"publication_date":"2023-10-16","ids":{"openalex":"https://openalex.org/W4388623768","doi":"https://doi.org/10.1109/bcicts54660.2023.10310790"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts54660.2023.10310790","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts54660.2023.10310790","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051119030","display_name":"Arman Ur Rashid","orcid":"https://orcid.org/0000-0002-6061-5934"},"institutions":[{"id":"https://openalex.org/I65760639","display_name":"Wolfram Research (United States)","ror":"https://ror.org/03k118f17","country_code":"US","type":"company","lineage":["https://openalex.org/I65760639"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Arman Ur Rashid","raw_affiliation_strings":["Power Research and Development, Wolfspeed, Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Research and Development, Wolfspeed, Inc","institution_ids":["https://openalex.org/I65760639"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012250499","display_name":"Britt Brooks","orcid":"https://orcid.org/0000-0003-2525-9150"},"institutions":[{"id":"https://openalex.org/I65760639","display_name":"Wolfram Research (United States)","ror":"https://ror.org/03k118f17","country_code":"US","type":"company","lineage":["https://openalex.org/I65760639"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Britt Brooks","raw_affiliation_strings":["Power Research and Development, Wolfspeed, Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Research and Development, Wolfspeed, Inc","institution_ids":["https://openalex.org/I65760639"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5093251680","display_name":"Steven Manz","orcid":null},"institutions":[{"id":"https://openalex.org/I65760639","display_name":"Wolfram Research (United States)","ror":"https://ror.org/03k118f17","country_code":"US","type":"company","lineage":["https://openalex.org/I65760639"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Steven Manz","raw_affiliation_strings":["Power Research and Development, Wolfspeed, Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Research and Development, Wolfspeed, Inc","institution_ids":["https://openalex.org/I65760639"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030518772","display_name":"Daniel J. Lichtenwalner","orcid":"https://orcid.org/0000-0002-6324-6118"},"institutions":[{"id":"https://openalex.org/I65760639","display_name":"Wolfram Research (United States)","ror":"https://ror.org/03k118f17","country_code":"US","type":"company","lineage":["https://openalex.org/I65760639"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Daniel J. Lichtenwalner","raw_affiliation_strings":["Power Research and Development, Wolfspeed, Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Research and Development, Wolfspeed, Inc","institution_ids":["https://openalex.org/I65760639"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019973006","display_name":"Sei\u2010Hyung Ryu","orcid":"https://orcid.org/0000-0002-3607-1199"},"institutions":[{"id":"https://openalex.org/I65760639","display_name":"Wolfram Research (United States)","ror":"https://ror.org/03k118f17","country_code":"US","type":"company","lineage":["https://openalex.org/I65760639"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sei-Hyung Ryu","raw_affiliation_strings":["Power Research and Development, Wolfspeed, Inc"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Power Research and Development, Wolfspeed, Inc","institution_ids":["https://openalex.org/I65760639"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.4909,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.6462056,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"310","last_page":"313"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12898","display_name":"Induction Heating and Inverter Technology","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7677571773529053},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.7145105600357056},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5260733962059021},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.49916791915893555},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.49630552530288696},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4664178788661957},{"id":"https://openalex.org/keywords/power-electronics","display_name":"Power electronics","score":0.46307313442230225},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4582672715187073},{"id":"https://openalex.org/keywords/pin-diode","display_name":"PIN diode","score":0.44944053888320923},{"id":"https://openalex.org/keywords/step-recovery-diode","display_name":"Step recovery diode","score":0.44267672300338745},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.4424527585506439},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.38506388664245605},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.325797438621521},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.31880301237106323},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.29135170578956604},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.28219735622406006},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2469768524169922},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.09396544098854065},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.08637875318527222}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7677571773529053},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.7145105600357056},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5260733962059021},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.49916791915893555},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.49630552530288696},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4664178788661957},{"id":"https://openalex.org/C178911571","wikidata":"https://www.wikidata.org/wiki/Q593143","display_name":"Power electronics","level":3,"score":0.46307313442230225},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4582672715187073},{"id":"https://openalex.org/C52236655","wikidata":"https://www.wikidata.org/wiki/Q2628074","display_name":"PIN diode","level":3,"score":0.44944053888320923},{"id":"https://openalex.org/C188855776","wikidata":"https://www.wikidata.org/wiki/Q120271","display_name":"Step recovery diode","level":4,"score":0.44267672300338745},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.4424527585506439},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38506388664245605},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.325797438621521},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.31880301237106323},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.29135170578956604},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.28219735622406006},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2469768524169922},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.09396544098854065},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.08637875318527222},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts54660.2023.10310790","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts54660.2023.10310790","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6700000166893005}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":11,"referenced_works":["https://openalex.org/W2098200501","https://openalex.org/W2143885659","https://openalex.org/W2159134406","https://openalex.org/W2270386405","https://openalex.org/W2403746207","https://openalex.org/W2770396603","https://openalex.org/W2771423200","https://openalex.org/W2904665315","https://openalex.org/W3133731472","https://openalex.org/W3216929759","https://openalex.org/W4237856744"],"related_works":["https://openalex.org/W2534763128","https://openalex.org/W4200190098","https://openalex.org/W3088400299","https://openalex.org/W1810291627","https://openalex.org/W2109246801","https://openalex.org/W1949455064","https://openalex.org/W3133623847","https://openalex.org/W2568603120","https://openalex.org/W4223962616","https://openalex.org/W2020461329"],"abstract_inverted_index":{"Different":[0],"reverse":[1,27,60,122],"recovery":[2,28,47,123],"modes":[3],"of":[4,77,92,117,124],"the":[5,19,43,51,56,74,83,89,113,118,125,136,157],"SiC":[6,78],"MOSFET's":[7],"body":[8,75,126],"diode":[9,68,76,127],"are":[10,34],"investigated":[11],"in":[12,30,55],"this":[13],"paper.":[14],"Using":[15],"semiconductor":[16],"device":[17],"simulation,":[18],"operating":[20],"conditions":[21],"under":[22],"which":[23],"snappy,":[24,119],"and":[25,86,105,108,120,149],"soft":[26,46,121],"occur":[29],"power":[31,158],"electronics":[32,159],"applications":[33],"better":[35],"explained.":[36],"The":[37,62,94,133],"work":[38],"presented":[39],"here":[40],"verifies":[41,135],"that":[42],"snappy":[44],"or":[45],"is":[48,70],"dependent":[49],"on":[50,129],"dynamic":[52,90],"carrier":[53],"distribution":[54,91],"drift":[57],"region":[58],"during":[59],"bias.":[61],"Compact":[63],"Modeling":[64],"Coalition":[65],"(CMC)":[66],"p-i-n":[67],"model":[69,73,96,114,137],"used":[71],"to":[72,142],"MOSFET":[79],"because":[80],"it":[81],"contains":[82],"requisite":[84],"equations":[85],"parameters":[87,98],"for":[88,99],"carriers.":[93],"physics-based":[95],"includes":[97],"bias-dependent":[100],"depletion":[101],"layer,":[102],"separate":[103],"anode":[104],"cathode":[106],"injection,":[107],"non-quasi-static":[109],"charge":[110],"distribution.":[111],"Consequently,":[112],"permits":[115],"simulation":[116,140],"based":[128],"external":[130],"circuit":[131],"conditions.":[132],"paper":[134],"by":[138],"comparing":[139],"results":[141],"measured":[143],"switching":[144],"data":[145],"at":[146],"various":[147],"temperatures,":[148],"gate":[150],"resistances.":[151],"This":[152],"modeling":[153],"exercise":[154],"can":[155],"facilitate":[156],"system's":[160],"optimal":[161],"design.":[162]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}