{"id":"https://openalex.org/W4322577833","doi":"https://doi.org/10.1109/bcicts53451.2022.10051762","title":"A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology","display_name":"A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology","publication_year":2022,"publication_date":"2022-10-16","ids":{"openalex":"https://openalex.org/W4322577833","doi":"https://doi.org/10.1109/bcicts53451.2022.10051762"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts53451.2022.10051762","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts53451.2022.10051762","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100717180","display_name":"Qiang Yu","orcid":"https://orcid.org/0009-0009-8474-8510"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Qiang Yu","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010144544","display_name":"Derek Thomson","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Derek Thomson","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079954157","display_name":"Han Wui Then","orcid":"https://orcid.org/0000-0003-4646-5906"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Han Wui Then","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5085019685","display_name":"Alvaro D. Latorre-Rey","orcid":"https://orcid.org/0000-0003-4603-9894"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Alvaro Latorre-Rey","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074180218","display_name":"M. Radosavljevi\u0107","orcid":"https://orcid.org/0009-0006-1359-601X"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marko Radosavljevic","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081823995","display_name":"Michael Beumer","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Michael Beumer","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022847304","display_name":"Pratik Koirala","orcid":"https://orcid.org/0000-0002-1476-3899"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pratik Koirala","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113924689","display_name":"N. Thomas","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nicole Thomas","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Nityan Nair","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nityan Nair","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018061777","display_name":"Heli Vora","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Heli Vora","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038497634","display_name":"Samuel James Bader","orcid":"https://orcid.org/0000-0002-9604-2074"},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Samuel Bader","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021093754","display_name":"Said Rami","orcid":null},"institutions":[{"id":"https://openalex.org/I1343180700","display_name":"Intel (United States)","ror":"https://ror.org/01ek73717","country_code":"US","type":"company","lineage":["https://openalex.org/I1343180700"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Said Rami","raw_affiliation_strings":["Intel Corporation,USA","Intel Corporation, USA"],"affiliations":[{"raw_affiliation_string":"Intel Corporation,USA","institution_ids":["https://openalex.org/I1343180700"]},{"raw_affiliation_string":"Intel Corporation, USA","institution_ids":["https://openalex.org/I1343180700"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":12,"corresponding_author_ids":["https://openalex.org/A5100717180"],"corresponding_institution_ids":["https://openalex.org/I1343180700"],"apc_list":null,"apc_paid":null,"fwci":0.7387,"has_fulltext":false,"cited_by_count":11,"citation_normalized_percentile":{"value":0.69916223,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"144","last_page":"147"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7962660193443298},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5929670333862305},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5871575474739075},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5751909613609314},{"id":"https://openalex.org/keywords/monolithic-microwave-integrated-circuit","display_name":"Monolithic microwave integrated circuit","score":0.46428409218788147},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4624742269515991},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.44240429997444153},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.44066786766052246},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4360677897930145},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.42706650495529175},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3708876073360443},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2876134216785431},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.22355130314826965}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7962660193443298},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5929670333862305},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5871575474739075},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5751909613609314},{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.46428409218788147},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4624742269515991},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.44240429997444153},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.44066786766052246},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4360677897930145},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.42706650495529175},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3708876073360443},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2876134216785431},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.22355130314826965}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts53451.2022.10051762","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts53451.2022.10051762","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8600000143051147,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2025134530","https://openalex.org/W2047048622","https://openalex.org/W2560891297","https://openalex.org/W2933312709","https://openalex.org/W3081200747"],"related_works":["https://openalex.org/W2062992686","https://openalex.org/W2216175200","https://openalex.org/W4281691147","https://openalex.org/W1723990645","https://openalex.org/W1669736425","https://openalex.org/W2600196889","https://openalex.org/W3012336578","https://openalex.org/W2070694218","https://openalex.org/W2532822217","https://openalex.org/W2115579119"],"abstract_inverted_index":{"This":[0,86,115],"paper":[1],"presents":[2],"the":[3,35,46,66,71,117],"design":[4,24,27],"and":[5,26,52,68],"characterization":[6],"of":[7,93,104,120],"a":[8,100],"fully":[9],"integrated":[10],"wide":[11,75],"band":[12,76],"Doherty":[13,31,60,88],"power":[14,53,113,124],"amplifier":[15,125],"(PA)":[16],"in":[17,45,126],"300mm":[18,127],"GaN-on-Si":[19,128],"technology":[20],"employing":[21],"CMOS-like":[22],"PDK,":[23],"rules":[25],"methodology.":[28],"A":[29,56,74],"new":[30],"PA":[32,89],"architecture":[33],"using":[34],"stacked":[36],"transistor":[37],"configuration":[38],"with":[39,107],"equal":[40],"voltage":[41],"distribution":[42],"is":[43,62,82,116],"implemented":[44,84],"auxiliary":[47],"path":[48],"to":[49,64,69],"improve":[50],"performance":[51],"utilization":[54],"factor.":[55],"lumped":[57,77],"element":[58,78],"based":[59,79],"combiner":[61],"designed":[63],"maximize":[65],"bandwidth":[67,103],"enhance":[70],"back-off":[72],"efficiency.":[73],"quadrature":[80],"coupler":[81],"also":[83],"on-chip.":[85],"compact":[87],"(small":[90],"core":[91],"area":[92],"1.66mm":[94],"<sup":[95],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[96],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[97],")":[98],"achieves":[99],"1-dB":[101],"fractional":[102],"38%":[105],"(3.2-4.7GHz)":[106],"over":[108],"39%":[109],"efficiency":[110],"at":[111],"6dB":[112],"back-off.":[114],"first":[118],"demonstration":[119],"Watt":[121],"level":[122],"RF":[123],"technology.":[129]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2}],"updated_date":"2026-04-17T18:11:37.981687","created_date":"2025-10-10T00:00:00"}