{"id":"https://openalex.org/W4322577838","doi":"https://doi.org/10.1109/bcicts53451.2022.10051755","title":"A 220-294 GHz Power Amplifier with 10-dBm P<sub>sat</sub> and 2.2% PAE in 250-nm InP DHBT","display_name":"A 220-294 GHz Power Amplifier with 10-dBm P<sub>sat</sub> and 2.2% PAE in 250-nm InP DHBT","publication_year":2022,"publication_date":"2022-10-16","ids":{"openalex":"https://openalex.org/W4322577838","doi":"https://doi.org/10.1109/bcicts53451.2022.10051755"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts53451.2022.10051755","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts53451.2022.10051755","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038583344","display_name":"Teruo Jyo","orcid":"https://orcid.org/0000-0001-8297-3911"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Teruo Jyo","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087581054","display_name":"Hiroshi Hamada","orcid":"https://orcid.org/0000-0002-8637-1843"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Hamada","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","NTT DOCOMO, INC"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT DOCOMO, INC","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003666823","display_name":"Munehiko Nagatani","orcid":"https://orcid.org/0000-0003-2744-3058"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Munehiko Nagatani","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004773469","display_name":"Hitoshi Wakita","orcid":"https://orcid.org/0000-0001-9732-7111"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hitoshi Wakita","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082456070","display_name":"Ibrahim Abdo","orcid":"https://orcid.org/0000-0001-6024-8540"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ibrahim Abdo","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101070170","display_name":"Miwa Mutoh","orcid":null},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Miwa Mutoh","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052347171","display_name":"Yuta Shiratori","orcid":"https://orcid.org/0000-0002-1304-6484"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yuta Shiratori","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064086312","display_name":"Kenichi Okada","orcid":"https://orcid.org/0000-0002-1082-7672"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenichi Okada","raw_affiliation_strings":["Tokyo Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5028333708","display_name":"Atsushi Shirane","orcid":"https://orcid.org/0000-0001-8172-4323"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Atsushi Shirane","raw_affiliation_strings":["Tokyo Institute of Technology"],"affiliations":[{"raw_affiliation_string":"Tokyo Institute of Technology","institution_ids":["https://openalex.org/I114531698"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019417876","display_name":"Hiroyuki Takahashi","orcid":"https://orcid.org/0000-0002-9700-6067"},"institutions":[{"id":"https://openalex.org/I2251713219","display_name":"NTT (Japan)","ror":"https://ror.org/00berct97","country_code":"JP","type":"company","lineage":["https://openalex.org/I2251713219"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroyuki Takahashi","raw_affiliation_strings":["NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"NTT Device Technology Labs,NTT Corporation,Kanagawa,Japan","institution_ids":["https://openalex.org/I2251713219"]},{"raw_affiliation_string":"NTT Corporation, NTT Device Technology Labs, Kanagawa, Japan","institution_ids":["https://openalex.org/I2251713219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":10,"corresponding_author_ids":["https://openalex.org/A5038583344"],"corresponding_institution_ids":["https://openalex.org/I2251713219"],"apc_list":null,"apc_paid":null,"fwci":0.7317,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.6960559,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"152","last_page":"155"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7580978870391846},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.6577110290527344},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.607657253742218},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.5968887209892273},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5572992563247681},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"Indium phosphide","score":0.5154036283493042},{"id":"https://openalex.org/keywords/ohm","display_name":"Ohm","score":0.5118152499198914},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5102200508117676},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.48569926619529724},{"id":"https://openalex.org/keywords/w-band","display_name":"W band","score":0.4385848939418793},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4234631657600403},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3537445068359375},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3023979663848877},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2479342520236969},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.24534308910369873},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.1917828619480133},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1870517134666443},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1756591796875},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.164282888174057},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07296732068061829}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7580978870391846},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.6577110290527344},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.607657253742218},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.5968887209892273},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5572992563247681},{"id":"https://openalex.org/C2776152967","wikidata":"https://www.wikidata.org/wiki/Q416291","display_name":"Indium phosphide","level":3,"score":0.5154036283493042},{"id":"https://openalex.org/C32211213","wikidata":"https://www.wikidata.org/wiki/Q47083","display_name":"Ohm","level":2,"score":0.5118152499198914},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5102200508117676},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.48569926619529724},{"id":"https://openalex.org/C2781183794","wikidata":"https://www.wikidata.org/wiki/Q3772984","display_name":"W band","level":2,"score":0.4385848939418793},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4234631657600403},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3537445068359375},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3023979663848877},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2479342520236969},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.24534308910369873},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1917828619480133},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1870517134666443},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1756591796875},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.164282888174057},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07296732068061829},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts53451.2022.10051755","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts53451.2022.10051755","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1602297169","https://openalex.org/W2078544403","https://openalex.org/W2101010201","https://openalex.org/W2121186100","https://openalex.org/W2332415292","https://openalex.org/W2582457364","https://openalex.org/W2763575512","https://openalex.org/W2775755776","https://openalex.org/W2921640134","https://openalex.org/W2965898247","https://openalex.org/W3005579525","https://openalex.org/W3043281468","https://openalex.org/W3131863105","https://openalex.org/W3152846588","https://openalex.org/W3184295128"],"related_works":["https://openalex.org/W4298203396","https://openalex.org/W3145579886","https://openalex.org/W2732217704","https://openalex.org/W1989685390","https://openalex.org/W2913043219","https://openalex.org/W2220553444","https://openalex.org/W2145450284","https://openalex.org/W1989223323","https://openalex.org/W2524770572","https://openalex.org/W2145205288"],"abstract_inverted_index":{"We":[0,68],"designed":[1],"and":[2,16,63,83,98,108,134],"fabricated":[3,112],"a":[4,10,70,105,115],"300-GHz-band":[5],"power":[6,62,65,73,82,129],"amplifier":[7],"(PA)":[8],"with":[9,75],"wide":[11],"bandwidth,":[12],"high":[13,17,41,106,109],"output":[14,61,81],"power,":[15],"power-added":[18],"efficiency":[19],"(PAE)":[20],"in":[21,56],"in-house":[22],"250-nm":[23],"indium":[24],"phosphide":[25],"(InP)":[26],"double":[27],"heterojunction":[28],"bipolar":[29],"transistor":[30],"(DHBT)":[31],"technology":[32],"having":[33],"an":[34,45,53],"f<inf>max</inf>":[35],"of":[36,119,131,136],"480":[37],"GHz.":[38],"To":[39],"obtain":[40],"PAE,":[42],"we":[43,87],"investigated":[44],"optimization":[46],"method":[47],"for":[48],"designing":[49],"the":[50,57,60,80,84,96,101],"PA":[51,113],"at":[52],"optimum":[54],"point":[55],"trade-off":[58],"between":[59],"DC":[64],"consumption":[66],"(P<inf>DC</inf>).":[67],"proposed":[69],"low-loss":[71],"T-junction":[72],"combiner":[74],"impedance":[76],"convertors":[77],"to":[78,94,99,103,125],"maximize":[79],"PAE.":[85,110],"Furthermore,":[86],"used":[88],"dense":[89],"through":[90],"substrate":[91],"vias":[92],"(TSVs)":[93],"stabilize":[95],"ground":[97],"suppress":[100],"oscillation":[102],"ensure":[104],"gain":[107],"The":[111],"achieved":[114],"-3":[116],"dB":[117],"bandwidth":[118],"74":[120],"GHz":[121,124],"from":[122],"220":[123],"294":[126],"GHz,":[127],"saturation":[128],"(P<inf>sat</inf>)":[130],"10.6":[132],"dBm,":[133],"PAE":[135],"2.24%.":[137]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":4}],"updated_date":"2025-12-24T23:09:58.560324","created_date":"2025-10-10T00:00:00"}