{"id":"https://openalex.org/W4322577905","doi":"https://doi.org/10.1109/bcicts53451.2022.10051729","title":"Device modeling tools and their application to SiGe HBT development","display_name":"Device modeling tools and their application to SiGe HBT development","publication_year":2022,"publication_date":"2022-10-16","ids":{"openalex":"https://openalex.org/W4322577905","doi":"https://doi.org/10.1109/bcicts53451.2022.10051729"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts53451.2022.10051729","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts53451.2022.10051729","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5035970449","display_name":"M. Schr\u00f6ter","orcid":"https://orcid.org/0000-0002-5432-716X"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Michael Schr\u00f6ter","raw_affiliation_strings":["TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062"],"affiliations":[{"raw_affiliation_string":"TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061670215","display_name":"Markus M\u00fcller","orcid":"https://orcid.org/0000-0003-1058-1649"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Markus M\u00fcller","raw_affiliation_strings":["TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062"],"affiliations":[{"raw_affiliation_string":"TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5079216614","display_name":"Mario Krattenmacher","orcid":"https://orcid.org/0000-0003-1274-3429"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mario Krattenmacher","raw_affiliation_strings":["TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062"],"affiliations":[{"raw_affiliation_string":"TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062","institution_ids":["https://openalex.org/I78650965"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5035970449"],"corresponding_institution_ids":["https://openalex.org/I78650965"],"apc_list":null,"apc_paid":null,"fwci":0.5488,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.64708101,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9951000213623047,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11803","display_name":"Superconducting and THz Device Technology","score":0.9947999715805054,"subfield":{"id":"https://openalex.org/subfields/3103","display_name":"Astronomy and Astrophysics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.8659076690673828},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.709773063659668},{"id":"https://openalex.org/keywords/solver","display_name":"Solver","score":0.6927534341812134},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5527448058128357},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.5381207466125488},{"id":"https://openalex.org/keywords/boltzmann-equation","display_name":"Boltzmann equation","score":0.5062474608421326},{"id":"https://openalex.org/keywords/technology-cad","display_name":"Technology CAD","score":0.46294984221458435},{"id":"https://openalex.org/keywords/diffusion","display_name":"Diffusion","score":0.4595467448234558},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.45930513739585876},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.44206225872039795},{"id":"https://openalex.org/keywords/solid-modeling","display_name":"Solid modeling","score":0.44005072116851807},{"id":"https://openalex.org/keywords/development","display_name":"Development (topology)","score":0.4224264621734619},{"id":"https://openalex.org/keywords/process-development","display_name":"Process development","score":0.4127795696258545},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.38960325717926025},{"id":"https://openalex.org/keywords/computational-science","display_name":"Computational science","score":0.3781554102897644},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.308276891708374},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22954991459846497},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.2148570716381073},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2130965292453766},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20577788352966309},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2019091248512268},{"id":"https://openalex.org/keywords/engineering-drawing","display_name":"Engineering drawing","score":0.16132321953773499},{"id":"https://openalex.org/keywords/process-engineering","display_name":"Process engineering","score":0.15121790766716003},{"id":"https://openalex.org/keywords/cad","display_name":"CAD","score":0.13684803247451782},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.12073451280593872}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.8659076690673828},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.709773063659668},{"id":"https://openalex.org/C2778770139","wikidata":"https://www.wikidata.org/wiki/Q1966904","display_name":"Solver","level":2,"score":0.6927534341812134},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5527448058128357},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.5381207466125488},{"id":"https://openalex.org/C165995430","wikidata":"https://www.wikidata.org/wiki/Q891653","display_name":"Boltzmann equation","level":2,"score":0.5062474608421326},{"id":"https://openalex.org/C34929307","wikidata":"https://www.wikidata.org/wiki/Q845636","display_name":"Technology CAD","level":3,"score":0.46294984221458435},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.4595467448234558},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.45930513739585876},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.44206225872039795},{"id":"https://openalex.org/C108882727","wikidata":"https://www.wikidata.org/wiki/Q2991685","display_name":"Solid modeling","level":2,"score":0.44005072116851807},{"id":"https://openalex.org/C2776542497","wikidata":"https://www.wikidata.org/wiki/Q5266672","display_name":"Development (topology)","level":2,"score":0.4224264621734619},{"id":"https://openalex.org/C2988729646","wikidata":"https://www.wikidata.org/wiki/Q838129","display_name":"Process development","level":2,"score":0.4127795696258545},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.38960325717926025},{"id":"https://openalex.org/C459310","wikidata":"https://www.wikidata.org/wiki/Q117801","display_name":"Computational science","level":1,"score":0.3781554102897644},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.308276891708374},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22954991459846497},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.2148570716381073},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2130965292453766},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20577788352966309},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2019091248512268},{"id":"https://openalex.org/C199639397","wikidata":"https://www.wikidata.org/wiki/Q1788588","display_name":"Engineering drawing","level":1,"score":0.16132321953773499},{"id":"https://openalex.org/C21880701","wikidata":"https://www.wikidata.org/wiki/Q2144042","display_name":"Process engineering","level":1,"score":0.15121790766716003},{"id":"https://openalex.org/C194789388","wikidata":"https://www.wikidata.org/wiki/Q17855283","display_name":"CAD","level":2,"score":0.13684803247451782},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.12073451280593872},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts53451.2022.10051729","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts53451.2022.10051729","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":40,"referenced_works":["https://openalex.org/W611825407","https://openalex.org/W1536879103","https://openalex.org/W1964404749","https://openalex.org/W1971790283","https://openalex.org/W1998107126","https://openalex.org/W2003810056","https://openalex.org/W2014208527","https://openalex.org/W2091811361","https://openalex.org/W2095843437","https://openalex.org/W2097797048","https://openalex.org/W2098680011","https://openalex.org/W2121881591","https://openalex.org/W2128123898","https://openalex.org/W2146094464","https://openalex.org/W2171725923","https://openalex.org/W2186871085","https://openalex.org/W2187400284","https://openalex.org/W2244539850","https://openalex.org/W2345283220","https://openalex.org/W2547020345","https://openalex.org/W2567862405","https://openalex.org/W2583356736","https://openalex.org/W2594624901","https://openalex.org/W2595011864","https://openalex.org/W2600222344","https://openalex.org/W2749068854","https://openalex.org/W2768710029","https://openalex.org/W2787949239","https://openalex.org/W2885771901","https://openalex.org/W2903960423","https://openalex.org/W3216026475","https://openalex.org/W4210505838","https://openalex.org/W4210548873","https://openalex.org/W4232139307","https://openalex.org/W4236154283","https://openalex.org/W4238664186","https://openalex.org/W4283800605","https://openalex.org/W4312352950","https://openalex.org/W6690408171","https://openalex.org/W6736259118"],"related_works":["https://openalex.org/W3169395230","https://openalex.org/W2111217742","https://openalex.org/W1878936288","https://openalex.org/W2003253702","https://openalex.org/W1492027935","https://openalex.org/W2140681148","https://openalex.org/W2140183546","https://openalex.org/W2137791713","https://openalex.org/W3094279528","https://openalex.org/W199635705"],"abstract_inverted_index":{"The":[0],"enabling":[1],"role":[2],"of":[3,14],"device":[4],"simulation":[5],"(TCAD)":[6],"and":[7,29,41,64],"compact":[8,39],"modeling":[9],"for":[10],"the":[11],"structural":[12],"optimization":[13],"SiGe":[15],"HBTs":[16],"during":[17],"process":[18,49],"development":[19],"is":[20,23],"discussed.":[21],"It":[22],"shown":[24],"that":[25],"employing":[26],"a":[27,37],"Boltzmann":[28],"an":[30],"augmented":[31],"drift-diffusion":[32],"solver":[33],"in":[34],"combination":[35],"with":[36,61],"physics-based":[38],"model":[40],"geometry":[42],"scalable":[43],"parameter":[44],"extraction":[45],"can":[46],"successfully":[47],"support":[48],"development.":[50],"As":[51],"application":[52],"examples,":[53,63],"two":[54],"particular":[55],"use":[56],"scenarios":[57],"are":[58,67],"discussed":[59],"along":[60],"practical":[62],"corresponding":[65],"results":[66],"presented.":[68]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":4}],"updated_date":"2025-12-21T01:58:51.020947","created_date":"2025-10-10T00:00:00"}