{"id":"https://openalex.org/W4322577874","doi":"https://doi.org/10.1109/bcicts53451.2022.10051706","title":"SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process","display_name":"SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate Process","publication_year":2022,"publication_date":"2022-10-16","ids":{"openalex":"https://openalex.org/W4322577874","doi":"https://doi.org/10.1109/bcicts53451.2022.10051706"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts53451.2022.10051706","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts53451.2022.10051706","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5086895963","display_name":"T. Vasen","orcid":"https://orcid.org/0000-0001-7632-1052"},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Timothy Vasen","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048604501","display_name":"Brian Novak","orcid":"https://orcid.org/0000-0002-8624-7631"},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Brian Novak","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011042927","display_name":"Marc Scimonelli","orcid":null},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Marc Scimonelli","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066215997","display_name":"Kevin Frey","orcid":null},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kevin Frey","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079318644","display_name":"Mustapha Saad","orcid":null},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mustapha Saad","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033233909","display_name":"Abbey Saia","orcid":null},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Abbey Saia","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046247866","display_name":"Benjamin Grisafe","orcid":null},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benjamin Grisafe","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023874563","display_name":"Ken A. Nagamatsu","orcid":"https://orcid.org/0000-0001-7344-8971"},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ken A. Nagamatsu","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036418117","display_name":"Josephine Chang","orcid":"https://orcid.org/0000-0002-7920-5281"},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Josephine Chang","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025972217","display_name":"Virginia D. Wheeler","orcid":"https://orcid.org/0000-0002-6024-9516"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Virginia Wheeler","raw_affiliation_strings":["US Naval Research Laboratory,Washington D.C,20375"],"affiliations":[{"raw_affiliation_string":"US Naval Research Laboratory,Washington D.C,20375","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000745448","display_name":"Karl D. Hobart","orcid":"https://orcid.org/0000-0002-3840-8357"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Karl Hobart","raw_affiliation_strings":["US Naval Research Laboratory,Washington D.C,20375"],"affiliations":[{"raw_affiliation_string":"US Naval Research Laboratory,Washington D.C,20375","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005899193","display_name":"Andrew D. Koehler","orcid":"https://orcid.org/0000-0003-3894-312X"},"institutions":[{"id":"https://openalex.org/I1288214837","display_name":"United States Naval Research Laboratory","ror":"https://ror.org/04d23a975","country_code":"US","type":"facility","lineage":["https://openalex.org/I1288214837","https://openalex.org/I1330347796","https://openalex.org/I175003984","https://openalex.org/I3130687028"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Andrew D. Koehler","raw_affiliation_strings":["US Naval Research Laboratory,Washington D.C,20375"],"affiliations":[{"raw_affiliation_string":"US Naval Research Laboratory,Washington D.C,20375","institution_ids":["https://openalex.org/I1288214837"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042241322","display_name":"Patrick B. Shea","orcid":null},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Patrick Shea","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110190763","display_name":"Stephen Van Campen","orcid":null},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Stephen Van Campen","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090000825","display_name":"Robert S. Howell","orcid":"https://orcid.org/0009-0003-6540-5391"},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Robert S. Howell","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002205027","display_name":"Shamima Afroz","orcid":"https://orcid.org/0009-0007-8773-5518"},"institutions":[{"id":"https://openalex.org/I2948394018","display_name":"Northrop Grumman (United States)","ror":"https://ror.org/05kewds18","country_code":"US","type":"company","lineage":["https://openalex.org/I2948394018"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shamima Afroz","raw_affiliation_strings":["Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090"],"affiliations":[{"raw_affiliation_string":"Advanced Technology Laboratory Northrop Grumman Mission Systems,Linthicum MD,21090","institution_ids":["https://openalex.org/I2948394018"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":16,"corresponding_author_ids":["https://openalex.org/A5086895963"],"corresponding_institution_ids":["https://openalex.org/I2948394018"],"apc_list":null,"apc_paid":null,"fwci":0.2681,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.54944751,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"120","last_page":"123"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.998199999332428,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7600966691970825},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5640447735786438},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5629798173904419},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5418120622634888},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5186735391616821},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5165594816207886},{"id":"https://openalex.org/keywords/metal-gate","display_name":"Metal gate","score":0.47966650128364563},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.4795260429382324},{"id":"https://openalex.org/keywords/gate-dielectric","display_name":"Gate dielectric","score":0.45618170499801636},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.27970513701438904},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.25629302859306335},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.24250701069831848},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.18475139141082764},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.1469193398952484},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13206830620765686}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7600966691970825},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5640447735786438},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5629798173904419},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5418120622634888},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5186735391616821},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5165594816207886},{"id":"https://openalex.org/C51140833","wikidata":"https://www.wikidata.org/wiki/Q6822740","display_name":"Metal gate","level":5,"score":0.47966650128364563},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.4795260429382324},{"id":"https://openalex.org/C166972891","wikidata":"https://www.wikidata.org/wiki/Q5527011","display_name":"Gate dielectric","level":4,"score":0.45618170499801636},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.27970513701438904},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.25629302859306335},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.24250701069831848},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.18475139141082764},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.1469193398952484},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13206830620765686},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts53451.2022.10051706","is_oa":false,"landing_page_url":"http://dx.doi.org/10.1109/bcicts53451.2022.10051706","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7400000095367432}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1571009051","https://openalex.org/W2036447248","https://openalex.org/W2051486208","https://openalex.org/W2065775068","https://openalex.org/W2288234485","https://openalex.org/W2506481575","https://openalex.org/W2769091763","https://openalex.org/W2945098559","https://openalex.org/W2984487880","https://openalex.org/W3003381624","https://openalex.org/W3093743391","https://openalex.org/W3138320092","https://openalex.org/W4210285364","https://openalex.org/W4210536332"],"related_works":["https://openalex.org/W3124921493","https://openalex.org/W2972369432","https://openalex.org/W2184507590","https://openalex.org/W155466995","https://openalex.org/W2049017294","https://openalex.org/W3092119238","https://openalex.org/W2947052238","https://openalex.org/W2472365492","https://openalex.org/W1823477250","https://openalex.org/W2292264471"],"abstract_inverted_index":{"The":[0,70,120],"super-lattice":[1],"castellated":[2],"field-effect":[3],"transistor":[4],"(SLCFET)":[5],"is":[6,72],"a":[7,14,40,75,81],"multi-channel":[8],"AlGaN/GaN":[9],"HEMT":[10],"device":[11,43,110],"emerging":[12],"as":[13],"technology":[15],"platform":[16],"for":[17],"RF":[18,23,27],"front":[19],"ends,":[20],"integrating":[21],"world-class":[22],"switches":[24],"with":[25,52,58,111],"high-performance":[26],"amplifiers":[28],"on":[29],"the":[30,36,109],"same":[31],"wafer.":[32],"This":[33],"paper":[34],"reports":[35],"performance":[37,107],"results":[38],"of":[39,88,95,108,138],"SLCFET":[41],"amplifier":[42],"using":[44],"an":[45],"ALD":[46],"TiN":[47],"T-gate,":[48],"which":[49],"are":[50],"improved":[51],"respect":[53],"to":[54,64,74,80],"previously":[55],"reported":[56],"data,":[57],"measured":[59],"f<inf>t</inf>":[60],"and":[61,66,117,130,134],"f<inf>max</inf>":[62],"up":[63],"99":[65],"152":[67],"GHz":[68],"respectively.":[69],"improvement":[71],"attributed":[73],"reduced":[76],"gate":[77,91,96,127],"capacitance":[78],"due":[79],"higher":[82],"T-gate":[83],"hat":[84],"without":[85],"significant":[86],"penalty":[87],"loss":[89],"in":[90],"control":[92],"or":[93],"increase":[94],"resistance.":[97],"We":[98],"also":[99,122],"report":[100],"W-band":[101],"(94":[102],"GHz)":[103],"large":[104],"signal":[105],"load-pull":[106],"4.33":[112],"W/active":[113],"mm":[114],"output":[115],"power":[116],"19.2%":[118],"PAE.":[119],"process":[121],"demonstrates":[123],"excellent":[124],"DC/RF":[125],"dispersion":[126],"lag":[128,132],"<1%":[129],"drain":[131],"<2%":[133],"high":[135],"breakdown":[136],"voltage":[137],"55":[139],"V.":[140]},"counts_by_year":[{"year":2023,"cited_by_count":2}],"updated_date":"2025-12-24T23:09:58.560324","created_date":"2025-10-10T00:00:00"}