{"id":"https://openalex.org/W3155207635","doi":"https://doi.org/10.1109/bcicts48439.2020.9392966","title":"Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer","display_name":"Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer","publication_year":2020,"publication_date":"2020-11-16","ids":{"openalex":"https://openalex.org/W3155207635","doi":"https://doi.org/10.1109/bcicts48439.2020.9392966","mag":"3155207635"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts48439.2020.9392966","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392966","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5055070102","display_name":"Michael J. Uren","orcid":"https://orcid.org/0000-0002-8842-0426"},"institutions":[{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Michael J. Uren","raw_affiliation_strings":["Centre for Device Thermography and Reliability, University of Bristol, Bristol, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Device Thermography and Reliability, University of Bristol, Bristol, UK","institution_ids":["https://openalex.org/I36234482"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081176603","display_name":"Martin Kuball","orcid":"https://orcid.org/0000-0003-3070-1070"},"institutions":[{"id":"https://openalex.org/I36234482","display_name":"University of Bristol","ror":"https://ror.org/0524sp257","country_code":"GB","type":"education","lineage":["https://openalex.org/I36234482"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Martin Kuball","raw_affiliation_strings":["Centre for Device Thermography and Reliability, University of Bristol, Bristol, UK"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Device Thermography and Reliability, University of Bristol, Bristol, UK","institution_ids":["https://openalex.org/I36234482"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I36234482"],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":"28","issue":null,"first_page":"1","last_page":"8"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6775519251823425},{"id":"https://openalex.org/keywords/epitaxy","display_name":"Epitaxy","score":0.6455913782119751},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5981148481369019},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.5350115895271301},{"id":"https://openalex.org/keywords/current-crowding","display_name":"Current crowding","score":0.5025756359100342},{"id":"https://openalex.org/keywords/electron","display_name":"Electron","score":0.47988736629486084},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.4451599419116974},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4301433861255646},{"id":"https://openalex.org/keywords/dispersion","display_name":"Dispersion (optics)","score":0.41171708703041077},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.2892642617225647},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.25209662318229675},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19067811965942383},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17654690146446228},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1412431299686432},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.09827274084091187}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6775519251823425},{"id":"https://openalex.org/C110738630","wikidata":"https://www.wikidata.org/wiki/Q1135540","display_name":"Epitaxy","level":3,"score":0.6455913782119751},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5981148481369019},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.5350115895271301},{"id":"https://openalex.org/C115900370","wikidata":"https://www.wikidata.org/wiki/Q5195096","display_name":"Current crowding","level":3,"score":0.5025756359100342},{"id":"https://openalex.org/C147120987","wikidata":"https://www.wikidata.org/wiki/Q2225","display_name":"Electron","level":2,"score":0.47988736629486084},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.4451599419116974},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4301433861255646},{"id":"https://openalex.org/C177562468","wikidata":"https://www.wikidata.org/wiki/Q182893","display_name":"Dispersion (optics)","level":2,"score":0.41171708703041077},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.2892642617225647},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.25209662318229675},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19067811965942383},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17654690146446228},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1412431299686432},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.09827274084091187},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts48439.2020.9392966","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392966","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G6688425595","display_name":null,"funder_award_id":"EP/R022739/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"},{"id":"https://openalex.org/G7179487037","display_name":null,"funder_award_id":"EP/N031563/1","funder_id":"https://openalex.org/F4320334627","funder_display_name":"Engineering and Physical Sciences Research Council"}],"funders":[{"id":"https://openalex.org/F4320334627","display_name":"Engineering and Physical Sciences Research Council","ror":"https://ror.org/0439y7842"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W2061240761","https://openalex.org/W2066898362","https://openalex.org/W2078420192","https://openalex.org/W2102774840","https://openalex.org/W2103032140","https://openalex.org/W2106709050","https://openalex.org/W2124722583","https://openalex.org/W2134893605","https://openalex.org/W2157881707","https://openalex.org/W2160042544","https://openalex.org/W2161910747","https://openalex.org/W2217816364","https://openalex.org/W2292080161","https://openalex.org/W2335100009","https://openalex.org/W2338173391","https://openalex.org/W2535125259","https://openalex.org/W2623811665","https://openalex.org/W2770276670","https://openalex.org/W2795195667","https://openalex.org/W2886164907","https://openalex.org/W2897162784","https://openalex.org/W3102502123","https://openalex.org/W3108595691","https://openalex.org/W3119688957","https://openalex.org/W6788338701"],"related_works":["https://openalex.org/W1972116642","https://openalex.org/W2083428498","https://openalex.org/W1980083042","https://openalex.org/W2234158271","https://openalex.org/W2293814765","https://openalex.org/W1999109929","https://openalex.org/W2946028229","https://openalex.org/W2389003209","https://openalex.org/W1993614129","https://openalex.org/W2047992967"],"abstract_inverted_index":{"GaN":[0,7],"RF":[1],"HEMTs":[2],"all":[3],"require":[4],"a":[5,25,38,67],"semi-insulating":[6],"layer":[8],"to":[9,87],"confine":[10],"the":[11,14,42,45,71,110,123,142],"electrons":[12],"in":[13,101],"channel,":[15],"and":[16,90,113,130,134],"this":[17],"is":[18,119,126,140],"frequently":[19],"achieved":[20],"by":[21],"incorporating":[22],"iron":[23,43],"as":[24],"deep":[26,56],"acceptor.":[27],"However,":[28],"smaller":[29],"densities":[30],"of":[31,70,83],"unintentionally":[32],"incorporated":[33,124],"carbon":[34,78,125],"can":[35,92],"actually":[36],"have":[37],"larger":[39],"effect":[40],"than":[41,139],"on":[44],"dynamic":[46,98],"behavior.":[47],"We":[48],"report":[49],"simulations":[50],"which":[51,75],"include":[52,97],"not":[53],"only":[54],"conventional":[55],"level":[57],"statistics":[58],"but":[59],"also":[60],"hopping":[61],"conduction":[62],"along":[63],"threading":[64],"dislocations":[65],"allowing":[66],"convincing":[68],"representation":[69],"floating":[72],"p-type":[73],"region":[74],"results":[76],"from":[77],"co-doping.":[79],"A":[80],"wide":[81],"range":[82],"experimental":[84],"observations":[85],"relating":[86],"important":[88],"parameters":[89],"effects":[91],"be":[93,132],"explained":[94],"quantitatively.":[95],"These":[96],"RON,":[99],"dispersion":[100],"pulse":[102],"I-V,":[103],"kink":[104],"effect,":[105],"electric":[106],"field":[107],"crowding":[108],"at":[109],"drain":[111,115],"terminal,":[112],"complex":[114],"current":[116],"transients.":[117],"It":[118],"strongly":[120],"recommended":[121],"that":[122],"taken":[127],"more":[128,137],"seriously":[129],"should":[131],"measured":[133],"reported":[135],"much":[136],"widely":[138],"currently":[141],"case.":[143]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}