{"id":"https://openalex.org/W3152840747","doi":"https://doi.org/10.1109/bcicts48439.2020.9392963","title":"Design of an 18\u201350 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier","display_name":"Design of an 18\u201350 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier","publication_year":2020,"publication_date":"2020-11-16","ids":{"openalex":"https://openalex.org/W3152840747","doi":"https://doi.org/10.1109/bcicts48439.2020.9392963","mag":"3152840747"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts48439.2020.9392963","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392963","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075406940","display_name":"Seokchul Lee","orcid":"https://orcid.org/0000-0002-0999-9063"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Seokchul Lee","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076380483","display_name":"Inchan Ju","orcid":"https://orcid.org/0000-0002-9362-5506"},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Inchan Ju","raw_affiliation_strings":["Qualcomm Atheros, Inc., San Jose, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Qualcomm Atheros, Inc., San Jose, CA, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059693864","display_name":"Yunyi Gong","orcid":"https://orcid.org/0000-0003-2795-4544"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yunyi Gong","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012321964","display_name":"Adilson S. Cardoso","orcid":"https://orcid.org/0000-0001-8665-1178"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4388482740","display_name":"Georgia Tech Research Institute","ror":"https://ror.org/04qfrh333","country_code":null,"type":"facility","lineage":["https://openalex.org/I130701444","https://openalex.org/I4388482740"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Adilson S. Cardoso","raw_affiliation_strings":["Georgia Tech Research Institute, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Tech Research Institute, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444","https://openalex.org/I4388482740"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067214268","display_name":"Jeffrey D. Connor","orcid":"https://orcid.org/0000-0003-1350-5182"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]},{"id":"https://openalex.org/I4388482740","display_name":"Georgia Tech Research Institute","ror":"https://ror.org/04qfrh333","country_code":null,"type":"facility","lineage":["https://openalex.org/I130701444","https://openalex.org/I4388482740"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeffrey D. Connor","raw_affiliation_strings":["Georgia Tech Research Institute, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Georgia Tech Research Institute, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444","https://openalex.org/I4388482740"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5003354200","display_name":"Moon-Kyu Cho","orcid":"https://orcid.org/0000-0002-4116-4496"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Moon-Kyu Cho","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073899315","display_name":"John D. Cressler","orcid":"https://orcid.org/0000-0001-8268-5135"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John D. Cressler","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.2081,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.54569818,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.8861545324325562},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.7296539545059204},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6780619621276855},{"id":"https://openalex.org/keywords/distributed-amplifier","display_name":"Distributed amplifier","score":0.5763317346572876},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5511809587478638},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.5405683517456055},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5404125452041626},{"id":"https://openalex.org/keywords/extremely-high-frequency","display_name":"Extremely high frequency","score":0.5298604369163513},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.5123361349105835},{"id":"https://openalex.org/keywords/transmission-line","display_name":"Transmission line","score":0.49523869156837463},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.45436719059944153},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42947447299957275},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.419716477394104},{"id":"https://openalex.org/keywords/electric-power-transmission","display_name":"Electric power transmission","score":0.4144653081893921},{"id":"https://openalex.org/keywords/characteristic-impedance","display_name":"Characteristic impedance","score":0.41353243589401245},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.38977786898612976},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.36245185136795044},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.30877310037612915},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.2857219874858856},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.21511107683181763},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10582229495048523},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.09792560338973999}],"concepts":[{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.8861545324325562},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.7296539545059204},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6780619621276855},{"id":"https://openalex.org/C110628552","wikidata":"https://www.wikidata.org/wiki/Q5283135","display_name":"Distributed amplifier","level":5,"score":0.5763317346572876},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5511809587478638},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.5405683517456055},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5404125452041626},{"id":"https://openalex.org/C45764600","wikidata":"https://www.wikidata.org/wiki/Q570342","display_name":"Extremely high frequency","level":2,"score":0.5298604369163513},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.5123361349105835},{"id":"https://openalex.org/C33441834","wikidata":"https://www.wikidata.org/wiki/Q693004","display_name":"Transmission line","level":2,"score":0.49523869156837463},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.45436719059944153},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42947447299957275},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.419716477394104},{"id":"https://openalex.org/C140311924","wikidata":"https://www.wikidata.org/wiki/Q200928","display_name":"Electric power transmission","level":2,"score":0.4144653081893921},{"id":"https://openalex.org/C172674978","wikidata":"https://www.wikidata.org/wiki/Q1164612","display_name":"Characteristic impedance","level":3,"score":0.41353243589401245},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.38977786898612976},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.36245185136795044},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.30877310037612915},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.2857219874858856},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.21511107683181763},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10582229495048523},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.09792560338973999}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts48439.2020.9392963","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392963","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2029838645","https://openalex.org/W2100463174","https://openalex.org/W2121501688","https://openalex.org/W2128093970","https://openalex.org/W2476699116","https://openalex.org/W2790102790","https://openalex.org/W2903136240","https://openalex.org/W2942987176","https://openalex.org/W3012007695"],"related_works":["https://openalex.org/W1492027935","https://openalex.org/W2140183546","https://openalex.org/W1971197147","https://openalex.org/W1544173589","https://openalex.org/W2537721720","https://openalex.org/W1586292687","https://openalex.org/W4387933462","https://openalex.org/W2154960098","https://openalex.org/W2140681148","https://openalex.org/W2555993941"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,27,31,50,67,100,106],"design":[4],"of":[5,49,80,89],"an":[6,59],"18-50":[7,101],"GHz":[8,102],"SiGe":[9,22],"HBT":[10],"cascode,":[11],"non-uniform":[12],"distributed":[13],"power":[14,79,109],"amplifier":[15],"(NDPA),":[16],"which":[17,104],"was":[18,96],"implemented":[19],"in":[20],"0.13-\u03bcm":[21],"BiCMOS":[23],"technology.":[24],"To":[25],"expand":[26],"NDPA":[28,73],"concept":[29],"into":[30],"millimeter-wave":[32],"(mm-wave)":[33],"spectrum,":[34],"a":[35,75,84],"multi-section":[36],"lumped":[37],"element":[38],"artificial":[39],"transmission":[40],"line":[41],"is":[42],"proposed":[43,71],"to":[44],"synthesize":[45],"high":[46],"characteristic":[47],"impedance":[48],"first":[51],"and":[52,83],"second":[53],"stage's":[54],"collector":[55],"lines,":[56],"thereby":[57],"maintaining":[58],"optimum":[60,108],"load":[61],"at":[62,91],"each":[63],"active":[64],"stage":[65],"over":[66],"entire":[68],"bandwidth.":[69],"The":[70,94],"mm-wave":[72],"achieves":[74],"peak":[76,85],"saturated":[77],"output":[78],"19.0":[81],"dBm":[82],"power-added":[86],"efficiency":[87],"(PAE)":[88],"19.1%":[90],"32.0":[92],"GHz.":[93],"PAE":[95],"above":[97],"14.2%":[98],"across":[99],"bandwidth,":[103],"demonstrates":[105],"NDPA's":[107],"matching":[110],"capability.":[111]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}