{"id":"https://openalex.org/W3157020087","doi":"https://doi.org/10.1109/bcicts48439.2020.9392951","title":"High Performance 150 mm RF GaN Technology with Low Memory Effects","display_name":"High Performance 150 mm RF GaN Technology with Low Memory Effects","publication_year":2020,"publication_date":"2020-11-16","ids":{"openalex":"https://openalex.org/W3157020087","doi":"https://doi.org/10.1109/bcicts48439.2020.9392951","mag":"3157020087"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts48439.2020.9392951","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392951","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109111556","display_name":"Karen Moore","orcid":null},"institutions":[],"countries":[],"is_corresponding":true,"raw_author_name":"K. Moore","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025577217","display_name":"B. Green","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"B. Green","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021372115","display_name":"S. Klingbeil","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"S. Klingbeil","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065590090","display_name":"C. Rampley","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Rampley","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052161335","display_name":"Philippe Renaud","orcid":"https://orcid.org/0000-0002-9069-7109"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. Renaud","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091451651","display_name":"D. Burdeaux","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D. Burdeaux","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051804498","display_name":"D. Hill","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"D. Hill","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079372577","display_name":"Chenqi Zhu","orcid":"https://orcid.org/0000-0003-0828-053X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Zhu","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101972816","display_name":"Jing Wan","orcid":"https://orcid.org/0000-0002-6339-4006"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Wan","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111869828","display_name":"J. Finder","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"J. Finder","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030905141","display_name":"K. Kim","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Kim","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113659238","display_name":"C.A. Gaw","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"C. Gaw","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051675829","display_name":"Thomas Arnold","orcid":"https://orcid.org/0000-0001-8655-2719"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"T. Arnold","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013358812","display_name":"Frederik Vanaverbeke","orcid":"https://orcid.org/0000-0003-4882-9275"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"F. Vanaverbeke","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054721996","display_name":"R. Srinidhi Embar","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"R. Embar","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071420903","display_name":"Peter Rashev","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"P. Rashev","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5086258127","display_name":"Muhammad Umar Masood","orcid":"https://orcid.org/0000-0002-5349-6199"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"M. Masood","raw_affiliation_strings":["NXP Semiconductors, Chandler, Arizona"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Chandler, Arizona","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":0,"institutions_distinct_count":17,"corresponding_author_ids":["https://openalex.org/A5109111556"],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.411,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.62919725,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.8192118406295776},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6582392454147339},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6179875731468201},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.6110383868217468},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5927444100379944},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5726179480552673},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5133301615715027},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.5023272037506104},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4740195870399475},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.4446495473384857},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4334738850593567},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.39675092697143555},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20853126049041748},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.13990181684494019},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1080518364906311},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.08336836099624634},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06463119387626648}],"concepts":[{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.8192118406295776},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6582392454147339},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6179875731468201},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.6110383868217468},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5927444100379944},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5726179480552673},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5133301615715027},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.5023272037506104},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4740195870399475},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.4446495473384857},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4334738850593567},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.39675092697143555},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20853126049041748},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.13990181684494019},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1080518364906311},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.08336836099624634},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06463119387626648},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts48439.2020.9392951","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392951","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","score":0.6499999761581421,"display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":3,"referenced_works":["https://openalex.org/W2081030855","https://openalex.org/W3048282731","https://openalex.org/W6781666454"],"related_works":["https://openalex.org/W2093532981","https://openalex.org/W2389891381","https://openalex.org/W2150020117","https://openalex.org/W3209221379","https://openalex.org/W2156294920","https://openalex.org/W2157096796","https://openalex.org/W2367826728","https://openalex.org/W3193712762","https://openalex.org/W2155700382","https://openalex.org/W4287025514"],"abstract_inverted_index":{"Gallium":[0],"nitride":[1],"(GaN)":[2],"heterostructure":[3],"field":[4],"effect":[5],"transistor":[6],"(HFET)":[7],"technology":[8,42,49],"is":[9,72],"rapidly":[10,30],"becoming":[11],"the":[12,80],"solution":[13],"of":[14,19,77],"choice":[15],"for":[16,22,43],"a":[17,66],"variety":[18],"infrastructure":[20],"applications":[21],"4G":[23],"and":[24,62],"beyond.":[25],"In":[26],"response":[27],"to":[28],"this":[29],"increasing":[31],"demand,":[32],"NXP":[33],"has":[34],"developed":[35],"an":[36],"internal":[37],"150mm":[38],"RF":[39,45,81,86],"GaN":[40],"HFET":[41],"their":[44,85],"power":[46,56,82],"lineup.":[47],"This":[48],"features":[50],"high":[51,53,55,63,67],"gain,":[52],"efficiency,":[54],"density,":[57],"very":[58],"low":[59],"memory":[60],"effects,":[61],"reliability":[64],"in":[65,79],"volume":[68],"manufacturing":[69],"environment":[70],"that":[71],"complemented":[73],"by":[74],"NXP's":[75],"years":[76],"experience":[78],"market":[83],"through":[84],"LDMOS":[87],"product":[88],"line.":[89]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}