{"id":"https://openalex.org/W3152790712","doi":"https://doi.org/10.1109/bcicts48439.2020.9392937","title":"Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing","display_name":"Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing","publication_year":2020,"publication_date":"2020-11-16","ids":{"openalex":"https://openalex.org/W3152790712","doi":"https://doi.org/10.1109/bcicts48439.2020.9392937","mag":"3152790712"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts48439.2020.9392937","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392937","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033623277","display_name":"Hanbin Ying","orcid":"https://orcid.org/0000-0002-4870-6366"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Hanbin Ying","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077937892","display_name":"Sunil G. Rao","orcid":"https://orcid.org/0000-0001-6462-3387"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sunil G. Rao","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020124044","display_name":"Jeffrey W. Teng","orcid":"https://orcid.org/0000-0003-1578-3426"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeffrey W. Teng","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020983025","display_name":"Milad Frounchi","orcid":"https://orcid.org/0000-0002-3488-2174"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Milad Frounchi","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061670215","display_name":"Markus M\u00fcller","orcid":"https://orcid.org/0000-0003-1058-1649"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Markus Muller","raw_affiliation_strings":["Technische Universit\u00e4t Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Technische Universit\u00e4t Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5052598592","display_name":"Xiaodi Jin","orcid":"https://orcid.org/0000-0002-7800-9000"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Xiaodi Jin","raw_affiliation_strings":["Technische Universit\u00e4t Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Technische Universit\u00e4t Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018992835","display_name":"Michael Schruter","orcid":null},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"TU Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Michael Schruter","raw_affiliation_strings":["Technische Universit\u00e4t Dresden, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Technische Universit\u00e4t Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073899315","display_name":"John D. Cressler","orcid":"https://orcid.org/0000-0001-8268-5135"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John D. Cressler","raw_affiliation_strings":["Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"Georgia Institute of Technology, Atlanta, USA, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5033623277"],"corresponding_institution_ids":["https://openalex.org/I130701444"],"apc_list":null,"apc_paid":null,"fwci":0.5137,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.66147261,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/large-signal-model","display_name":"Large-signal model","score":0.6092286109924316},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5622992515563965},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.5387479066848755},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5253505110740662},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5088298916816711},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.5011780261993408},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.49445104598999023},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.47595784068107605},{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.4515995383262634},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.43521878123283386},{"id":"https://openalex.org/keywords/cryogenics","display_name":"Cryogenics","score":0.41268986463546753},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.37015625834465027},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.36029624938964844},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.32488036155700684},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3180551528930664},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.20231497287750244},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.20147916674613953},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.13688719272613525},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08590996265411377}],"concepts":[{"id":"https://openalex.org/C2779542357","wikidata":"https://www.wikidata.org/wiki/Q6489019","display_name":"Large-signal model","level":3,"score":0.6092286109924316},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5622992515563965},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.5387479066848755},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5253505110740662},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5088298916816711},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.5011780261993408},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.49445104598999023},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.47595784068107605},{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.4515995383262634},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.43521878123283386},{"id":"https://openalex.org/C179725390","wikidata":"https://www.wikidata.org/wiki/Q192116","display_name":"Cryogenics","level":2,"score":0.41268986463546753},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37015625834465027},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36029624938964844},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.32488036155700684},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3180551528930664},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.20231497287750244},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.20147916674613953},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.13688719272613525},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08590996265411377},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts48439.2020.9392937","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392937","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7599999904632568,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1543986194","https://openalex.org/W1977089268","https://openalex.org/W2050330019","https://openalex.org/W2116887901","https://openalex.org/W2139792536","https://openalex.org/W2594082276","https://openalex.org/W2755984005","https://openalex.org/W3150092197","https://openalex.org/W4249724823"],"related_works":["https://openalex.org/W2374191410","https://openalex.org/W1987403465","https://openalex.org/W2121543525","https://openalex.org/W2172103396","https://openalex.org/W2004263109","https://openalex.org/W2137479381","https://openalex.org/W2524598856","https://openalex.org/W2053834191","https://openalex.org/W2132838016","https://openalex.org/W4401669638"],"abstract_inverted_index":{"A":[0],"HICUM/L0":[1],"compact":[2,42,87],"model":[3,43,69,88],"is":[4,77],"extracted":[5],"for":[6,17,59,68,89],"advanced":[7],"SiGe":[8,90],"HBTs":[9,91],"operating":[10,92],"at":[11,93],"12":[12,56],"K,":[13],"targeting":[14],"potential":[15],"use":[16],"control":[18],"and":[19,50,85],"readout":[20],"applications":[21],"in":[22,47],"quantum":[23],"computing.":[24],"Due":[25],"to":[26,55],"the":[27,78],"presence":[28],"of":[29,81],"transistor":[30],"non-idealities,":[31],"extraction":[32],"procedures":[33],"are":[34,71],"modified":[35],"from":[36],"room":[37],"temperature":[38],"approaches.":[39],"The":[40],"resultant":[41],"shows":[44],"good":[45],"accuracy":[46,70],"both":[48],"small-signal":[49],"large-signal":[51,86],"prediction":[52],"when":[53],"compared":[54],"K":[57],"measurements":[58],"a":[60,82],"wideband":[61],"cryogenic":[62,95],"low":[63],"noise":[64],"amplifier.":[65],"Important":[66],"factors":[67],"investigated":[72],"through":[73],"sensitivity":[74],"analysis.":[75],"This":[76],"first":[79],"demonstration":[80],"DC,":[83],"small-signal,":[84],"deep":[94],"temperatures.":[96]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-25T21:42:39.735039","created_date":"2025-10-10T00:00:00"}