{"id":"https://openalex.org/W3153816468","doi":"https://doi.org/10.1109/bcicts48439.2020.9392935","title":"A High Efficiency 4\u201318 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology","display_name":"A High Efficiency 4\u201318 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology","publication_year":2020,"publication_date":"2020-11-16","ids":{"openalex":"https://openalex.org/W3153816468","doi":"https://doi.org/10.1109/bcicts48439.2020.9392935","mag":"3153816468"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts48439.2020.9392935","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392935","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027709371","display_name":"Shuoqi Chen","orcid":"https://orcid.org/0000-0002-2590-6445"},"institutions":[{"id":"https://openalex.org/I4210126946","display_name":"Qorvo (United States)","ror":"https://ror.org/03amcs261","country_code":"US","type":"company","lineage":["https://openalex.org/I4210126946"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Shuoqi Chen","raw_affiliation_strings":["Qorvo Inc, Richardson, TX, USA"],"affiliations":[{"raw_affiliation_string":"Qorvo Inc, Richardson, TX, USA","institution_ids":["https://openalex.org/I4210126946"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101879153","display_name":"V. Kumar","orcid":"https://orcid.org/0000-0002-9929-1455"},"institutions":[{"id":"https://openalex.org/I4210126946","display_name":"Qorvo (United States)","ror":"https://ror.org/03amcs261","country_code":"US","type":"company","lineage":["https://openalex.org/I4210126946"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Vipan Kumar","raw_affiliation_strings":["Qorvo Inc, Richardson, TX, USA"],"affiliations":[{"raw_affiliation_string":"Qorvo Inc, Richardson, TX, USA","institution_ids":["https://openalex.org/I4210126946"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016075331","display_name":"Yu Cao","orcid":"https://orcid.org/0000-0002-7669-8690"},"institutions":[{"id":"https://openalex.org/I4210126946","display_name":"Qorvo (United States)","ror":"https://ror.org/03amcs261","country_code":"US","type":"company","lineage":["https://openalex.org/I4210126946"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yu Cao","raw_affiliation_strings":["Qorvo Inc, Richardson, TX, USA"],"affiliations":[{"raw_affiliation_string":"Qorvo Inc, Richardson, TX, USA","institution_ids":["https://openalex.org/I4210126946"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5027709371"],"corresponding_institution_ids":["https://openalex.org/I4210126946"],"apc_list":null,"apc_paid":null,"fwci":0.1537,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.5272531,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7003032565116882},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6883528232574463},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6187145113945007},{"id":"https://openalex.org/keywords/monolithic-microwave-integrated-circuit","display_name":"Monolithic microwave integrated circuit","score":0.6046989560127258},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5739307403564453},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.5719652771949768},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.5424204468727112},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5035561919212341},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.46975353360176086},{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.43429869413375854},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.4295445680618286},{"id":"https://openalex.org/keywords/transformer","display_name":"Transformer","score":0.42229384183883667},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.37983453273773193},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3369906544685364},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24556860327720642},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.1979101598262787}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7003032565116882},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6883528232574463},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6187145113945007},{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.6046989560127258},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5739307403564453},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.5719652771949768},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.5424204468727112},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5035561919212341},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.46975353360176086},{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.43429869413375854},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.4295445680618286},{"id":"https://openalex.org/C66322947","wikidata":"https://www.wikidata.org/wiki/Q11658","display_name":"Transformer","level":3,"score":0.42229384183883667},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.37983453273773193},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3369906544685364},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24556860327720642},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1979101598262787},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts48439.2020.9392935","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts48439.2020.9392935","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8799999952316284}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2100463174","https://openalex.org/W2101016058","https://openalex.org/W2778220613","https://openalex.org/W2782503469","https://openalex.org/W2802417599","https://openalex.org/W2971386423","https://openalex.org/W2971992474","https://openalex.org/W6675265961"],"related_works":["https://openalex.org/W1542549500","https://openalex.org/W2167356313","https://openalex.org/W2990861346","https://openalex.org/W2226943413","https://openalex.org/W1897760433","https://openalex.org/W1557806132","https://openalex.org/W2355154599","https://openalex.org/W2091782502","https://openalex.org/W2325632425","https://openalex.org/W4396758811"],"abstract_inverted_index":{"This":[0,22,73],"paper":[1],"describes":[2],"the":[3,52,85,111,120,123,136,162,165,171],"design":[4,50,172],"and":[5,38,71,115],"measured":[6,153],"performance":[7],"of":[8,31,81,94,119,130,144,149,164,177],"a":[9,28,34,39,92,127],"wideband":[10,61],"power":[11,42,55,83,146],"amplifier":[12,49,56],"MMIC":[13],"based":[14],"on":[15,161],"Qorvo's":[16],"90nm":[17,166],"T-gate":[18,168],"GaN":[19,23,167,189],"HEMT":[20,169],"technology.":[21],"technology":[24],"is":[25],"characterized":[26],"by":[27],"peak":[29],"fT":[30],"145":[32],"GHz,":[33],"PAE":[35,93,150],">":[36],"55%,":[37],"P3dB":[40],"output":[41,65,82,145],"density>":[43],"2.0W/mm":[44],"at":[45,98,110,182],"35":[46],"GHz.":[47],"The":[48,103],"utilizes":[51],"non-uniform":[53],"distributed":[54],"(NDPA)":[57],"architecture":[58],"with":[59,91,147],"an":[60],"edge":[62,114],"coupling":[63],"1:4":[64],"transformer":[66],"to":[67,155,186],"achieve":[68],"high":[69],"efficiency":[70,178],"power.":[72],"single-stage":[74],"NDPA":[75,124],"produces":[76],"3":[77],"-":[78,87,96,132,141],"5.3":[79],"W":[80,143],"over":[84,135],"4":[86],"18":[88,156],"GHz":[89],"band":[90,113,184],"25.6":[95],"35.7%":[97],"13":[99],"V":[100,157],"supply":[101,158],"voltage.":[102,159],"large-signal":[104],"gain":[105,129],"varies":[106],"between":[107],"7.7":[108],"dB":[109,134],"low":[112],"10.2dB":[116],"in":[117],"most":[118],"band.":[121,138],"Meanwhile,":[122],"has":[125,151,173],"achieved":[126],"small-signal":[128],"12.0":[131],"14.5":[133],"same":[137],"Additionally,":[139],"5.6":[140],"7.0":[142],"21-34.2%":[148],"been":[152],"up":[154],"Based":[160],"advantages":[163],"technology,":[170],"established":[174],"new":[175],"benchmarks":[176],"for":[179],"PAs":[180],"operating":[181],"similar":[183],"compared":[185],"other":[187],"state-of-the-art":[188],"NDPAs.":[190]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}