{"id":"https://openalex.org/W3004261010","doi":"https://doi.org/10.1109/bcicts45179.2019.8972761","title":"Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications","display_name":"Feasibility Study of InAlN/GaN HEMT for sub-6 GHz Band Applications","publication_year":2019,"publication_date":"2019-11-01","ids":{"openalex":"https://openalex.org/W3004261010","doi":"https://doi.org/10.1109/bcicts45179.2019.8972761","mag":"3004261010"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts45179.2019.8972761","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts45179.2019.8972761","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109217497","display_name":"Kazutaka Inoue","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Kazutaka Inoue","raw_affiliation_strings":["Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","institution_ids":["https://openalex.org/I4210166210"]},{"raw_affiliation_string":"Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102301387","display_name":"Kenta Sugawara","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kenta Sugawara","raw_affiliation_strings":["Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","institution_ids":["https://openalex.org/I4210166210"]},{"raw_affiliation_string":"Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029878599","display_name":"Ken Kikuchi","orcid":"https://orcid.org/0000-0003-1205-4631"},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ken Kikuchi","raw_affiliation_strings":["Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","institution_ids":["https://openalex.org/I4210166210"]},{"raw_affiliation_string":"Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5034041505","display_name":"Isao Makabe","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Isao Makabe","raw_affiliation_strings":["Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","institution_ids":["https://openalex.org/I4210166210"]},{"raw_affiliation_string":"Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan","institution_ids":["https://openalex.org/I4210166210"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5002222866","display_name":"Hiroshi Yamamoto","orcid":"https://orcid.org/0000-0002-5686-5156"},"institutions":[{"id":"https://openalex.org/I4210166210","display_name":"Sumitomo Electric Industries (Japan)","ror":"https://ror.org/05rnkb382","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210166210"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Hiroshi Yamamoto","raw_affiliation_strings":["Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan"],"affiliations":[{"raw_affiliation_string":"Sumitomo Electric Industries, Ltd,Transmission Devices Laboratory,Sakae-ku, Yokohama, Kanagawa,Japan,244-8588","institution_ids":["https://openalex.org/I4210166210"]},{"raw_affiliation_string":"Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd, Sakae-ku, Yokohama, Kanagawa, Japan","institution_ids":["https://openalex.org/I4210166210"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5109217497"],"corresponding_institution_ids":["https://openalex.org/I4210166210"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.15931078,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.95704185962677},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.733921229839325},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6909685134887695},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.6716045141220093},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5707264542579651},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.48855695128440857},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.45768988132476807},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.4024354815483093},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3710562586784363},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3275737762451172},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24792444705963135},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.18059372901916504},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07320481538772583}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.95704185962677},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.733921229839325},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6909685134887695},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.6716045141220093},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5707264542579651},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.48855695128440857},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.45768988132476807},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.4024354815483093},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3710562586784363},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3275737762451172},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24792444705963135},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.18059372901916504},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07320481538772583},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts45179.2019.8972761","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts45179.2019.8972761","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.550000011920929,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":13,"referenced_works":["https://openalex.org/W1580170943","https://openalex.org/W1668532387","https://openalex.org/W2032262202","https://openalex.org/W2060786687","https://openalex.org/W2117948777","https://openalex.org/W2158766609","https://openalex.org/W2162857337","https://openalex.org/W2164299968","https://openalex.org/W2288234485","https://openalex.org/W2573193276","https://openalex.org/W6634694810","https://openalex.org/W6696212819","https://openalex.org/W7001091136"],"related_works":["https://openalex.org/W1821467047","https://openalex.org/W3113886925","https://openalex.org/W2156334786","https://openalex.org/W4226474410","https://openalex.org/W2128175041","https://openalex.org/W3089241959","https://openalex.org/W2514157138","https://openalex.org/W2545909941","https://openalex.org/W2039488304","https://openalex.org/W2044015544"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"the":[3,11,38,51,63,67,78],"high":[4],"breakdown":[5],"voltage":[6],"InAlN":[7,14,28,69],"HEMT":[8,15,30,70],"development":[9],"and":[10],"possibility":[12],"of":[13,42,56,66,88],"to":[16,53,77],"lower":[17],"frequency":[18],"range,":[19],"including":[20],"5G":[21],"sub-6":[22],"GHz":[23],"band":[24],"applications.":[25],"The":[26,59],"developed":[27,68],"barrier":[29],"with":[31],"GaN":[32],"cap":[33],"layer":[34],"was":[35],"successfully":[36],"suppressed":[37],"gate":[39,52],"leakage":[40],"current":[41],"1":[43],"\u00d7":[44],"10":[45],"<sup":[46],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[47],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-4</sup>":[48],"A/mm":[49],"at":[50],"drain":[54],"bias":[55],"-100":[57],"V.":[58],"load-pull":[60],"measurement":[61],"clarified":[62],"superior":[64],"efficiency":[65],"by":[71,82],"3":[72],"points,":[73],"which":[74],"is":[75],"attributed":[76],"sharper":[79],"knee":[80],"profile":[81],"utilizing":[83],"higher":[84],"sheet":[85],"electron":[86],"density":[87],"InAlN/GaN":[89],"interface.":[90]},"counts_by_year":[{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}