{"id":"https://openalex.org/W2903283757","doi":"https://doi.org/10.1109/bcicts.2018.8550832","title":"A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOS","display_name":"A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOS","publication_year":2018,"publication_date":"2018-10-01","ids":{"openalex":"https://openalex.org/W2903283757","doi":"https://doi.org/10.1109/bcicts.2018.8550832","mag":"2903283757"},"language":"en","primary_location":{"id":"doi:10.1109/bcicts.2018.8550832","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts.2018.8550832","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101705104","display_name":"Kang Ning","orcid":"https://orcid.org/0000-0002-9218-6417"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Kang Ning","raw_affiliation_strings":["University of California, Santa Barbara"],"affiliations":[{"raw_affiliation_string":"University of California, Santa Barbara","institution_ids":["https://openalex.org/I154570441"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024558404","display_name":"James F. Buckwalter","orcid":"https://orcid.org/0000-0002-9390-0897"},"institutions":[{"id":"https://openalex.org/I154570441","display_name":"University of California, Santa Barbara","ror":"https://ror.org/02t274463","country_code":"US","type":"education","lineage":["https://openalex.org/I154570441"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"James F. Buckwalter","raw_affiliation_strings":["University of California, Santa Barbara"],"affiliations":[{"raw_affiliation_string":"University of California, Santa Barbara","institution_ids":["https://openalex.org/I154570441"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101705104"],"corresponding_institution_ids":["https://openalex.org/I154570441"],"apc_list":null,"apc_paid":null,"fwci":0.515,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.68582876,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"85","last_page":"88"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9958999752998352,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.735023021697998},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6916792392730713},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6570868492126465},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6533157229423523},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6237585544586182},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5884944796562195},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5825868248939514},{"id":"https://openalex.org/keywords/power-gain","display_name":"Power gain","score":0.548596978187561},{"id":"https://openalex.org/keywords/dbm","display_name":"dBm","score":0.43016162514686584},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.4255332052707672},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.4177817404270172},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.3855481445789337},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22540512681007385},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21985787153244019},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.16591328382492065},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.1283136010169983}],"concepts":[{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.735023021697998},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6916792392730713},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6570868492126465},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6533157229423523},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6237585544586182},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5884944796562195},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5825868248939514},{"id":"https://openalex.org/C98377741","wikidata":"https://www.wikidata.org/wiki/Q7236514","display_name":"Power gain","level":4,"score":0.548596978187561},{"id":"https://openalex.org/C94105702","wikidata":"https://www.wikidata.org/wiki/Q777017","display_name":"dBm","level":4,"score":0.43016162514686584},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.4255332052707672},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.4177817404270172},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.3855481445789337},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22540512681007385},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21985787153244019},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.16591328382492065},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.1283136010169983}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/bcicts.2018.8550832","is_oa":false,"landing_page_url":"https://doi.org/10.1109/bcicts.2018.8550832","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"},{"id":"https://openalex.org/F4320316520","display_name":"Keysight Technologies","ror":"https://ror.org/02903cd17"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1614093470","https://openalex.org/W2047048622","https://openalex.org/W2082595613","https://openalex.org/W2480061537","https://openalex.org/W2514577350","https://openalex.org/W2553079792","https://openalex.org/W2735833797","https://openalex.org/W2736217564","https://openalex.org/W2793400818"],"related_works":["https://openalex.org/W2591212050","https://openalex.org/W3108616848","https://openalex.org/W591105852","https://openalex.org/W4294086117","https://openalex.org/W2137770335","https://openalex.org/W2512837728","https://openalex.org/W2152569749","https://openalex.org/W2095977898","https://openalex.org/W2218464468","https://openalex.org/W2144336680"],"abstract_inverted_index":{"A":[0],"single":[1],"stage,":[2],"millimeter-wave":[3],"2-stack":[4],"FET":[5],"power":[6,13,79,114],"amplifier":[7],"operates":[8],"with":[9,68],"a":[10,27,69,77,86,92,119],"peak":[11,18],"saturated":[12],"of":[14,20,38,73,99],"18.2":[15],"dBm":[16],"and":[17,54,95,113],"PAE":[19,24],"48.2%.":[21],"The":[22,42,62,81],"high":[23],"results":[25],"from":[26],"proposed":[28],"Cgd":[29],"neutralization":[30],"through":[31],"coupled":[32],"inductor":[33,49],"feedback":[34],"between":[35],"the":[36,39,45,52,59,104,110],"drains":[37],"stacked":[40],"FETs.":[41],"technique":[43],"reuses":[44],"interstage":[46],"matching":[47],"shunt":[48],"to":[50],"reduce":[51],"loss":[53],"chip":[55],"area":[56,98],"while":[57],"improving":[58],"PA":[60,63,82,122],"gain.":[61],"achieves":[64],"13.6":[65],"dB":[66,71],"gain":[67,112],"3":[70],"bandwidth":[72],"12":[74],"GHz":[75],"at":[76,123],"2.4-V":[78],"supply.":[80],"is":[83],"implemented":[84],"in":[85],"4S-nm":[87],"SOI":[88],"CMOS":[89],"technology":[90],"using":[91],"trap-rich":[93],"substrate":[94],"has":[96],"an":[97],"520":[100],"\u03bcm\u00d7530":[101],"\u03bcm.":[102],"To":[103],"author's":[105],"knowledge,":[106],"this":[107],"work":[108],"demonstrates":[109],"highest":[111],"added":[115],"efficiency":[116],"(PAE)":[117],"for":[118],"single-stage":[120],"Si-based":[121],"28":[124],"GHz.":[125]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}