{"id":"https://openalex.org/W2776727453","doi":"https://doi.org/10.1109/asscc.2017.8240267","title":"Subthreshold voltage reference with nwell/psub diode leakage compensation for low-power high-temperature systems","display_name":"Subthreshold voltage reference with nwell/psub diode leakage compensation for low-power high-temperature systems","publication_year":2017,"publication_date":"2017-11-01","ids":{"openalex":"https://openalex.org/W2776727453","doi":"https://doi.org/10.1109/asscc.2017.8240267","mag":"2776727453"},"language":"en","primary_location":{"id":"doi:10.1109/asscc.2017.8240267","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2017.8240267","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5075063817","display_name":"Inhee Lee","orcid":"https://orcid.org/0000-0001-5723-9678"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan\u2013Ann Arbor","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Inhee Lee","raw_affiliation_strings":["Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I27837315"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5000767141","display_name":"Dennis Sylvester","orcid":"https://orcid.org/0000-0003-2598-0458"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan\u2013Ann Arbor","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Dennis Sylvester","raw_affiliation_strings":["Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I27837315"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026311377","display_name":"David Blaauw","orcid":"https://orcid.org/0000-0001-6744-7075"},"institutions":[{"id":"https://openalex.org/I27837315","display_name":"University of Michigan\u2013Ann Arbor","ror":"https://ror.org/00jmfr291","country_code":"US","type":"education","lineage":["https://openalex.org/I27837315"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"David Blaauw","raw_affiliation_strings":["Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, USA","institution_ids":["https://openalex.org/I27837315"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5075063817"],"corresponding_institution_ids":["https://openalex.org/I27837315"],"apc_list":null,"apc_paid":null,"fwci":0.2549,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.56539797,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"265","last_page":"268"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11230","display_name":"Innovative Energy Harvesting Technologies","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2210","display_name":"Mechanical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.6860845685005188},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6190701127052307},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.583073079586029},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.571233868598938},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5401666760444641},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.5364124774932861},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5315551161766052},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5072224140167236},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4822302758693695},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.4676283001899719},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.4617356061935425},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.43394678831100464},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4141128659248352},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.36925268173217773},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.366115540266037},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2533039450645447},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.22373759746551514},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1582806408405304}],"concepts":[{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.6860845685005188},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6190701127052307},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.583073079586029},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.571233868598938},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5401666760444641},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.5364124774932861},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5315551161766052},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5072224140167236},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4822302758693695},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.4676283001899719},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.4617356061935425},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.43394678831100464},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4141128659248352},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.36925268173217773},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.366115540266037},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2533039450645447},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.22373759746551514},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1582806408405304},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asscc.2017.8240267","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2017.8240267","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1661368752","https://openalex.org/W1703234190","https://openalex.org/W1984863066","https://openalex.org/W2011636748","https://openalex.org/W2047160794","https://openalex.org/W2047344047","https://openalex.org/W2049704041","https://openalex.org/W2075636013","https://openalex.org/W2093236804","https://openalex.org/W2138870611","https://openalex.org/W2584442328","https://openalex.org/W2594883689","https://openalex.org/W2603585591","https://openalex.org/W4207051508","https://openalex.org/W6662164821","https://openalex.org/W6662398725"],"related_works":["https://openalex.org/W2370820504","https://openalex.org/W2372270451","https://openalex.org/W1970992322","https://openalex.org/W3096597667","https://openalex.org/W2952987165","https://openalex.org/W3107541594","https://openalex.org/W2606355462","https://openalex.org/W1565578855","https://openalex.org/W2370976371","https://openalex.org/W2087168948"],"abstract_inverted_index":{"This":[0,49],"paper":[1],"proposes":[2],"a":[3,65,75,81,99],"voltage":[4],"reference":[5],"operating":[6],"up":[7],"to":[8,21,63,89,108],"170":[9,90,122],"\u00b0C":[10,88,91,97,123],"for":[11],"low-power":[12],"high-temperature":[13],"systems.":[14],"The":[15],"proposed":[16],"circuit":[17],"buffers":[18],"body":[19],"voltages":[20],"avoid":[22],"degradation":[23],"of":[24,46,84,102],"temperature":[25,117],"coefficient":[26],"from":[27,86,105,124],"nwell/psub":[28],"diode":[29,38],"leakage.":[30],"For":[31],"low":[32,51,55],"power":[33,52],"overhead,":[34],"it":[35],"measures":[36],"the":[37,43,47,68],"leakage":[39],"and":[40,98,118],"adaptively":[41],"adjusts":[42],"bias":[44],"current":[45],"buffers.":[48],"enables":[50],"consumption":[53],"at":[54,95,115,121],"temperature,":[56],"which":[57],"can":[58],"allow":[59],"an":[60],"energy":[61],"harvester":[62],"recharge":[64],"battery":[66],"in":[67,74],"target":[69],"system.":[70],"Prototype":[71],"chips,":[72],"fabricated":[73],"180":[76],"nm":[77],"CMOS":[78],"process,":[79],"show":[80],"\u00b13\u03c3":[82],"inaccuracy":[83],"3.4%":[85],"0":[87],"after":[92],"single":[93],"trim":[94],"80":[96],"line":[100],"sensitivity":[101],"0.088":[103],"%/V":[104],"1.8":[106,125],"V":[107],"3.6":[109],"V.":[110,126],"It":[111],"consumes":[112],"76.3":[113],"pA":[114],"room":[116],"177":[119],"nA":[120]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}