{"id":"https://openalex.org/W2779776854","doi":"https://doi.org/10.1109/asscc.2017.8240253","title":"HTD: A light-weight holosymmetrical transition detector based in-situ timing monitoring technique for wide-voltage-range in 40nm CMOS","display_name":"HTD: A light-weight holosymmetrical transition detector based in-situ timing monitoring technique for wide-voltage-range in 40nm CMOS","publication_year":2017,"publication_date":"2017-11-01","ids":{"openalex":"https://openalex.org/W2779776854","doi":"https://doi.org/10.1109/asscc.2017.8240253","mag":"2779776854"},"language":"en","primary_location":{"id":"doi:10.1109/asscc.2017.8240253","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2017.8240253","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069915390","display_name":"Wentao Dai","orcid":"https://orcid.org/0000-0002-2221-4769"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wentao Dai","raw_affiliation_strings":["Southeast University, Nanjing, Jiangsu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southeast University, Nanjing, Jiangsu, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057291086","display_name":"Weiwei Shan","orcid":"https://orcid.org/0000-0001-5520-1326"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weiwei Shan","raw_affiliation_strings":["Southeast University, Nanjing, Jiangsu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southeast University, Nanjing, Jiangsu, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020594075","display_name":"Xinning Liu","orcid":"https://orcid.org/0000-0001-9035-2189"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinning Liu","raw_affiliation_strings":["Southeast University, Nanjing, Jiangsu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southeast University, Nanjing, Jiangsu, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5030384645","display_name":"Jun Yang","orcid":"https://orcid.org/0000-0002-8379-0321"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Yang","raw_affiliation_strings":["Southeast University, Nanjing, Jiangsu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Southeast University, Nanjing, Jiangsu, China","institution_ids":["https://openalex.org/I76569877"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I76569877"],"apc_list":null,"apc_paid":null,"fwci":0.7584,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.67067853,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"209","last_page":"212"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6967886686325073},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.6092923879623413},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5945919752120972},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.57347172498703},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.5045610666275024},{"id":"https://openalex.org/keywords/throughput","display_name":"Throughput","score":0.4942808151245117},{"id":"https://openalex.org/keywords/application-specific-integrated-circuit","display_name":"Application-specific integrated circuit","score":0.47372379899024963},{"id":"https://openalex.org/keywords/wide-dynamic-range","display_name":"Wide dynamic range","score":0.44715404510498047},{"id":"https://openalex.org/keywords/node","display_name":"Node (physics)","score":0.42775222659111023},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4241354763507843},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.40534138679504395},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3728893995285034},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3660000264644623},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.35016071796417236},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3199869394302368},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1233663260936737}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6967886686325073},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.6092923879623413},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5945919752120972},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.57347172498703},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.5045610666275024},{"id":"https://openalex.org/C157764524","wikidata":"https://www.wikidata.org/wiki/Q1383412","display_name":"Throughput","level":3,"score":0.4942808151245117},{"id":"https://openalex.org/C77390884","wikidata":"https://www.wikidata.org/wiki/Q217302","display_name":"Application-specific integrated circuit","level":2,"score":0.47372379899024963},{"id":"https://openalex.org/C2776179129","wikidata":"https://www.wikidata.org/wiki/Q7998640","display_name":"Wide dynamic range","level":2,"score":0.44715404510498047},{"id":"https://openalex.org/C62611344","wikidata":"https://www.wikidata.org/wiki/Q1062658","display_name":"Node (physics)","level":2,"score":0.42775222659111023},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4241354763507843},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.40534138679504395},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3728893995285034},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3660000264644623},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.35016071796417236},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3199869394302368},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1233663260936737},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.0},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asscc.2017.8240253","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2017.8240253","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":8,"referenced_works":["https://openalex.org/W2025340565","https://openalex.org/W2039559700","https://openalex.org/W2082597509","https://openalex.org/W2106648230","https://openalex.org/W2128247882","https://openalex.org/W2289333215","https://openalex.org/W4236432903","https://openalex.org/W6660155203"],"related_works":["https://openalex.org/W2165367082","https://openalex.org/W1972641423","https://openalex.org/W611446063","https://openalex.org/W1996322406","https://openalex.org/W2078379271","https://openalex.org/W2043460294","https://openalex.org/W4210712718","https://openalex.org/W2368609622","https://openalex.org/W1905398909","https://openalex.org/W2112696823"],"abstract_inverted_index":{"To":[0],"eliminate":[1],"the":[2,31,34,48,61,86,90,93,99,103,118],"worst-case":[3],"timing":[4,17],"margins,":[5],"a":[6,141,147],"13-transistor":[7],"holosymmetrical":[8],"transition":[9],"detector":[10],"(HTD)":[11],"is":[12,50,76],"proposed":[13],"for":[14,53],"use":[15],"in":[16,112,136],"variation":[18,62],"resilient":[19,63],"systems.":[20],"The":[21],"HTD":[22],"achieves":[23],"low":[24],"overhead":[25,144],"and":[26,44,97,132],"wide-voltage-range":[27],"operation":[28],"via":[29],"monitoring":[30],"discharge":[32],"at":[33,89],"floating":[35],"node":[36],"of":[37,79,102],"two-stage":[38],"CMOS":[39,114],"inverters.":[40],"Using":[41],"local":[42],"detection":[43],"global":[45],"clock":[46],"stalling,":[47],"system":[49,87,119],"stalled":[51],"immediately":[52],"one":[54],"cycle":[55],"when":[56],"an":[57,80,107],"error":[58,81],"occurs,":[59],"allowing":[60],"technique":[64],"to":[65,146],"be":[66],"integrated":[67],"into":[68],"any":[69],"circuits":[70],"without":[71,116],"architectural":[72],"changes.":[73],"Plus,":[74],"there":[75],"no":[77],"need":[78],"recovery":[82],"mechanism":[83],"by":[84,130,134],"keeping":[85],"working":[88],"point":[91],"before":[92],"first":[94],"failure":[95],"(PBFF)":[96],"utilizing":[98],"time-borrowing":[100],"characteristics":[101],"latch.":[104],"Applied":[105],"on":[106],"8th-order":[108],"filter":[109],"test":[110],"chip":[111],"40nm":[113],"process,":[115],"changing":[117],"architecture,":[120],"chip's":[121],"measurement":[122],"results":[123],"demonstrate":[124],"that":[125],"it":[126],"improves":[127],"energy":[128],"efficiency":[129],"45.6%/28.1%":[131],"throughput":[133],"179.31%/28.2%":[135],"near-VTH(0.474V)":[137],"/super-VTH(1.1V)":[138],"while":[139],"incurring":[140],"4.37%":[142],"area":[143],"compared":[145],"baseline":[148],"design.":[149]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2018,"cited_by_count":2}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}