{"id":"https://openalex.org/W2778020922","doi":"https://doi.org/10.1109/asscc.2017.8240250","title":"An 82% energy-saving change-sensing flip-flop in 40nm CMOS for ultra-low power applications","display_name":"An 82% energy-saving change-sensing flip-flop in 40nm CMOS for ultra-low power applications","publication_year":2017,"publication_date":"2017-11-01","ids":{"openalex":"https://openalex.org/W2778020922","doi":"https://doi.org/10.1109/asscc.2017.8240250","mag":"2778020922"},"language":"en","primary_location":{"id":"doi:10.1109/asscc.2017.8240250","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2017.8240250","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045154871","display_name":"Van Loi Le","orcid":"https://orcid.org/0000-0002-8500-3176"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"Van Loi Le","raw_affiliation_strings":["NXP Semiconductors, Singapore","VIRTUS, IC Design Centre of Excellence, School of EEE, Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Singapore","institution_ids":[]},{"raw_affiliation_string":"VIRTUS, IC Design Centre of Excellence, School of EEE, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023292781","display_name":"Juhui Li","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Juhui Li","raw_affiliation_strings":["NXP Semiconductors, Singapore"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Singapore","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049492532","display_name":"Alan Chang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Alan Chang","raw_affiliation_strings":["NXP Semiconductors, Singapore"],"affiliations":[{"raw_affiliation_string":"NXP Semiconductors, Singapore","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5013775632","display_name":"Tony T. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Tony T. Kim","raw_affiliation_strings":["VIRTUS, IC Design Centre of Excellence, School of EEE, Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"VIRTUS, IC Design Centre of Excellence, School of EEE, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5045154871"],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":null,"apc_paid":null,"fwci":0.1433,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.53674245,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"197","last_page":"200"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flip-flop","display_name":"Flip-flop","score":0.8615431785583496},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7257647514343262},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.632205605506897},{"id":"https://openalex.org/keywords/transmission-gate","display_name":"Transmission gate","score":0.6074296236038208},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.5827584266662598},{"id":"https://openalex.org/keywords/low-power-electronics","display_name":"Low-power electronics","score":0.5543486475944519},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5438637137413025},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5285933017730713},{"id":"https://openalex.org/keywords/ultra-low-power","display_name":"Ultra low power","score":0.503623902797699},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4409187138080597},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4162021577358246},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.41229119896888733},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3539012670516968},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3210349678993225},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.24153360724449158},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.1445549726486206}],"concepts":[{"id":"https://openalex.org/C2781007278","wikidata":"https://www.wikidata.org/wiki/Q183406","display_name":"Flip-flop","level":3,"score":0.8615431785583496},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7257647514343262},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.632205605506897},{"id":"https://openalex.org/C2780949067","wikidata":"https://www.wikidata.org/wiki/Q1136752","display_name":"Transmission gate","level":4,"score":0.6074296236038208},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.5827584266662598},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.5543486475944519},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5438637137413025},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5285933017730713},{"id":"https://openalex.org/C3017773396","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Ultra low power","level":4,"score":0.503623902797699},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4409187138080597},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4162021577358246},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.41229119896888733},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3539012670516968},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3210349678993225},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.24153360724449158},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.1445549726486206},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asscc.2017.8240250","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2017.8240250","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8999999761581421}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1969164955","https://openalex.org/W1995665089","https://openalex.org/W2056378213","https://openalex.org/W2140066229","https://openalex.org/W2140480749","https://openalex.org/W2143890803","https://openalex.org/W2145876393","https://openalex.org/W2161000806","https://openalex.org/W6649082081","https://openalex.org/W6681475482"],"related_works":["https://openalex.org/W2524786631","https://openalex.org/W1808420522","https://openalex.org/W2468619362","https://openalex.org/W3148554323","https://openalex.org/W1619389265","https://openalex.org/W2155579514","https://openalex.org/W2610960993","https://openalex.org/W2778020922","https://openalex.org/W2136758643","https://openalex.org/W2915016853"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3],"propose":[4],"a":[5,57],"novel":[6],"24-transistor":[7],"change-sensing":[8,21],"flip-flop":[9,40,52],"(CSFF)":[10],"for":[11],"ultra-low":[12,118],"power":[13,70,108],"applications.":[14],"With":[15],"the":[16,23,39,49,69,83,92,128],"aid":[17],"of":[18,29,72,87,96,132],"an":[19],"internal":[20,30],"unit,":[22],"proposed":[24],"CSFF":[25,67,112,126],"eliminates":[26],"redundant":[27],"transitions":[28],"clocked":[31],"nodes":[32],"when":[33],"there":[34],"is":[35],"no":[36],"change":[37],"in":[38,61,91],"content.":[41],"No":[42],"additional":[43],"transistors":[44],"are":[45],"required":[46],"compared":[47,100],"to":[48,98,101],"conventional":[50],"transmission-gate":[51],"(TGFF).":[53],"Measurement":[54,121],"results":[55,122],"from":[56],"test":[58],"chip":[59],"fabricated":[60],"40nm":[62],"CMOS":[63],"technology":[64],"show":[65],"that":[66,125],"achieves":[68],"reduction":[71],"82%":[73],"and":[74,80,82,89,103,109],"68%":[75],"at":[76,117],"10%":[77],"activity":[78],"rate":[79],"1.0V,":[81],"C-Q":[84],"delay":[85],"improvement":[86],"37%":[88],"11%":[90],"supply":[93],"voltage":[94,119,131],"range":[95],"0.4V":[97],"1.0V":[99],"TGFF":[102],"SSCFF.":[104],"While":[105],"achieving":[106],"better":[107],"energy":[110],"efficiencies,":[111],"still":[113],"maintains":[114],"robust":[115],"functionality":[116],"operations.":[120],"also":[123],"demonstrate":[124],"shows":[127],"minimum":[129],"operating":[130],"0.19":[133],"V.":[134]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}