{"id":"https://openalex.org/W2088189058","doi":"https://doi.org/10.1109/asscc.2014.7008932","title":"A 44.9% PAE digitally-assisted linear power amplifier in 40 nm CMOS","display_name":"A 44.9% PAE digitally-assisted linear power amplifier in 40 nm CMOS","publication_year":2014,"publication_date":"2014-11-01","ids":{"openalex":"https://openalex.org/W2088189058","doi":"https://doi.org/10.1109/asscc.2014.7008932","mag":"2088189058"},"language":"en","primary_location":{"id":"doi:10.1109/asscc.2014.7008932","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2014.7008932","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051575595","display_name":"Haoyu Qian","orcid":"https://orcid.org/0000-0001-5947-4209"},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Haoyu Qian","raw_affiliation_strings":["Dept. of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA","Analog and Mixed Signal Center Dept. of Electrical and Computer Engineering Texas A&M University College Station TX 77843 USA"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]},{"raw_affiliation_string":"Analog and Mixed Signal Center Dept. of Electrical and Computer Engineering Texas A&M University College Station TX 77843 USA","institution_ids":["https://openalex.org/I91045830"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024571753","display_name":"Jos\u00e9 Silva-Mart\u00ednez","orcid":"https://orcid.org/0000-0002-7960-0177"},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jose Silva-Martinez","raw_affiliation_strings":["Dept. of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA","Analog and Mixed Signal Center Dept. of Electrical and Computer Engineering Texas A&M University College Station TX 77843 USA"],"affiliations":[{"raw_affiliation_string":"Dept. of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]},{"raw_affiliation_string":"Analog and Mixed Signal Center Dept. of Electrical and Computer Engineering Texas A&M University College Station TX 77843 USA","institution_ids":["https://openalex.org/I91045830"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5051575595"],"corresponding_institution_ids":["https://openalex.org/I91045830"],"apc_list":null,"apc_paid":null,"fwci":0.628,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.74197764,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"349","last_page":"352"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7113533616065979},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.5995410084724426},{"id":"https://openalex.org/keywords/predistortion","display_name":"Predistortion","score":0.5995110273361206},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.5579692721366882},{"id":"https://openalex.org/keywords/linear-amplifier","display_name":"Linear amplifier","score":0.5482665300369263},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5294045209884644},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.5286353826522827},{"id":"https://openalex.org/keywords/electrical-efficiency","display_name":"Electrical efficiency","score":0.4857047498226166},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4853771924972534},{"id":"https://openalex.org/keywords/adjacent-channel","display_name":"Adjacent channel","score":0.4741708040237427},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4681055247783661},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.435594379901886},{"id":"https://openalex.org/keywords/baseband","display_name":"Baseband","score":0.4311656951904297},{"id":"https://openalex.org/keywords/power-gain","display_name":"Power gain","score":0.42690783739089966},{"id":"https://openalex.org/keywords/power-supply-rejection-ratio","display_name":"Power supply rejection ratio","score":0.41387200355529785},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41027116775512695},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26470160484313965},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1182551383972168}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7113533616065979},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.5995410084724426},{"id":"https://openalex.org/C2778587875","wikidata":"https://www.wikidata.org/wiki/Q7239686","display_name":"Predistortion","level":4,"score":0.5995110273361206},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.5579692721366882},{"id":"https://openalex.org/C71041172","wikidata":"https://www.wikidata.org/wiki/Q6553412","display_name":"Linear amplifier","level":5,"score":0.5482665300369263},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5294045209884644},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.5286353826522827},{"id":"https://openalex.org/C118993495","wikidata":"https://www.wikidata.org/wiki/Q5042828","display_name":"Electrical efficiency","level":3,"score":0.4857047498226166},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4853771924972534},{"id":"https://openalex.org/C2776908912","wikidata":"https://www.wikidata.org/wiki/Q16001834","display_name":"Adjacent channel","level":4,"score":0.4741708040237427},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4681055247783661},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.435594379901886},{"id":"https://openalex.org/C65165936","wikidata":"https://www.wikidata.org/wiki/Q575784","display_name":"Baseband","level":3,"score":0.4311656951904297},{"id":"https://openalex.org/C98377741","wikidata":"https://www.wikidata.org/wiki/Q7236514","display_name":"Power gain","level":4,"score":0.42690783739089966},{"id":"https://openalex.org/C15892472","wikidata":"https://www.wikidata.org/wiki/Q1482413","display_name":"Power supply rejection ratio","level":4,"score":0.41387200355529785},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41027116775512695},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26470160484313965},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1182551383972168},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asscc.2014.7008932","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asscc.2014.7008932","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8799999952316284,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320309480","display_name":"Nvidia","ror":"https://ror.org/03jdj4y14"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1980187274","https://openalex.org/W2008465270","https://openalex.org/W2058507304","https://openalex.org/W2084267866","https://openalex.org/W2096832335","https://openalex.org/W2106589079","https://openalex.org/W2164060098"],"related_works":["https://openalex.org/W1973572237","https://openalex.org/W2001380327","https://openalex.org/W2119824941","https://openalex.org/W1582054083","https://openalex.org/W2675182538","https://openalex.org/W2018691840","https://openalex.org/W3134605291","https://openalex.org/W4388691849","https://openalex.org/W2560049261","https://openalex.org/W3186212546"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,114,142,151],"1.9":[4],"GHz":[5],"linear":[6,127,144],"power":[7,14,18,25,35,63,68,74,117,146],"amplifier":[8],"(PA)":[9],"architecture":[10],"that":[11,44],"improves":[12],"its":[13,34],"efficiency":[15,94,124],"in":[16,83,107],"the":[17,57,61,67,70,84,91,99],"back-off":[19],"(PBO)":[20],"region.":[21],"The":[22,87,103,132],"combination":[23],"of":[24,69,118,129,147],"transistor":[26],"segmentation":[27,79],"and":[28,50,95,126],"digital":[29,85,100],"gain":[30,75,128],"compensation":[31],"effectively":[32],"enhances":[33],"efficiency.":[36],"A":[37],"fast":[38],"switching":[39],"scheme":[40,59],"is":[41,105,155],"proposed,":[42],"such":[43],"PA":[45,62,104],"segments":[46],"are":[47,80],"switched":[48],"on":[49],"off":[51],"according":[52],"to":[53,78],"signal":[54,154],"power,":[55],"i.e.":[56],"proposed":[58,88],"makes":[60],"consumption":[64],"correlate":[65],"with":[66,121],"input":[71],"signal.":[72],"Binary":[73],"variations":[76],"due":[77],"dynamically":[81],"compensated":[82],"domain.":[86],"solution":[89],"overcomes":[90],"trade-off":[92],"between":[93],"linearity":[96],"by":[97],"employing":[98],"predistortion":[101],"technique.":[102],"implemented":[106],"40":[108],"nm":[109],"CMOS":[110],"process,":[111],"it":[112],"delivers":[113],"saturated":[115],"output":[116,145],"35":[119],"dBm":[120,149],"44.9%":[122],"power-added":[123],"(PAE)":[125],"38":[130],"dB.":[131],"adjacent":[133],"channel":[134],"leakage":[135],"ratio":[136],"(ACLR)":[137],"at":[138,141],"\u00b15":[139],"MHz":[140],"maximum":[143],"31":[148],"for":[150],"baseband":[152],"WCDMA":[153],"-35.8":[156],"dBc.":[157]},"counts_by_year":[{"year":2016,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}