{"id":"https://openalex.org/W3148006798","doi":"https://doi.org/10.1109/aspdac.2011.5722276","title":"Variation-tolerant and self-repair design methodology for low temperature polycrystalline silicon liquid crystal and organic light emitting diode displays","display_name":"Variation-tolerant and self-repair design methodology for low temperature polycrystalline silicon liquid crystal and organic light emitting diode displays","publication_year":2011,"publication_date":"2011-01-01","ids":{"openalex":"https://openalex.org/W3148006798","doi":"https://doi.org/10.1109/aspdac.2011.5722276","mag":"3148006798"},"language":"en","primary_location":{"id":"doi:10.1109/aspdac.2011.5722276","is_oa":false,"landing_page_url":"https://doi.org/10.1109/aspdac.2011.5722276","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103229822","display_name":"Chih\u2010Hsiang Ho","orcid":"https://orcid.org/0000-0002-4786-2340"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Chih-Hsiang Ho","raw_affiliation_strings":["Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100639051","display_name":"Chao L\u00fc","orcid":"https://orcid.org/0000-0002-6451-8453"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Chao Lu","raw_affiliation_strings":["Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106083836","display_name":"Debabrata Mohapatra","orcid":null},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Debabrata Mohapatra","raw_affiliation_strings":["Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031161187","display_name":"Kaushik Roy","orcid":"https://orcid.org/0009-0002-3375-2877"},"institutions":[{"id":"https://openalex.org/I219193219","display_name":"Purdue University West Lafayette","ror":"https://ror.org/02dqehb95","country_code":"US","type":"education","lineage":["https://openalex.org/I219193219"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Kaushik Roy","raw_affiliation_strings":["Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA","institution_ids":["https://openalex.org/I219193219"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5103229822"],"corresponding_institution_ids":["https://openalex.org/I219193219"],"apc_list":null,"apc_paid":null,"fwci":1.0599,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.81292932,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"3","issue":null,"first_page":"695","last_page":"700"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10624","display_name":"Silicon and Solar Cell Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amoled","display_name":"AMOLED","score":0.8121586441993713},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7621229887008667},{"id":"https://openalex.org/keywords/liquid-crystal-display","display_name":"Liquid-crystal display","score":0.7031001448631287},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.643850564956665},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6126532554626465},{"id":"https://openalex.org/keywords/oled","display_name":"OLED","score":0.5974326729774475},{"id":"https://openalex.org/keywords/liquid-crystal-on-silicon","display_name":"Liquid crystal on silicon","score":0.536936342716217},{"id":"https://openalex.org/keywords/brightness","display_name":"Brightness","score":0.48151978850364685},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.46560364961624146},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.44914984703063965},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.43437039852142334},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.41647863388061523},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4014694094657898},{"id":"https://openalex.org/keywords/active-matrix","display_name":"Active matrix","score":0.3894909918308258},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3585866391658783},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28924739360809326},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.18127581477165222},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14118561148643494},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1192876398563385}],"concepts":[{"id":"https://openalex.org/C101050124","wikidata":"https://www.wikidata.org/wiki/Q527747","display_name":"AMOLED","level":5,"score":0.8121586441993713},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7621229887008667},{"id":"https://openalex.org/C128019096","wikidata":"https://www.wikidata.org/wiki/Q83341","display_name":"Liquid-crystal display","level":2,"score":0.7031001448631287},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.643850564956665},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6126532554626465},{"id":"https://openalex.org/C150759737","wikidata":"https://www.wikidata.org/wiki/Q209593","display_name":"OLED","level":3,"score":0.5974326729774475},{"id":"https://openalex.org/C42207441","wikidata":"https://www.wikidata.org/wiki/Q1758065","display_name":"Liquid crystal on silicon","level":3,"score":0.536936342716217},{"id":"https://openalex.org/C125245961","wikidata":"https://www.wikidata.org/wiki/Q221656","display_name":"Brightness","level":2,"score":0.48151978850364685},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.46560364961624146},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44914984703063965},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.43437039852142334},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.41647863388061523},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4014694094657898},{"id":"https://openalex.org/C70201059","wikidata":"https://www.wikidata.org/wiki/Q3142195","display_name":"Active matrix","level":4,"score":0.3894909918308258},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3585866391658783},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28924739360809326},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.18127581477165222},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14118561148643494},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1192876398563385},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/aspdac.2011.5722276","is_oa":false,"landing_page_url":"https://doi.org/10.1109/aspdac.2011.5722276","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"16th Asia and South Pacific Design Automation Conference (ASP-DAC 2011)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1989586286","https://openalex.org/W2022045454","https://openalex.org/W2023517902","https://openalex.org/W2042219352","https://openalex.org/W2050074600","https://openalex.org/W2056481882","https://openalex.org/W2092318981","https://openalex.org/W2103495474","https://openalex.org/W2127359148","https://openalex.org/W2131634023","https://openalex.org/W2132584871","https://openalex.org/W2151444434","https://openalex.org/W2155461104","https://openalex.org/W2156574744","https://openalex.org/W2159359748","https://openalex.org/W2169454466","https://openalex.org/W2540946788"],"related_works":["https://openalex.org/W2156929029","https://openalex.org/W2383219785","https://openalex.org/W1974060622","https://openalex.org/W2152746605","https://openalex.org/W2124224818","https://openalex.org/W2045985508","https://openalex.org/W2102359626","https://openalex.org/W2589046708","https://openalex.org/W2142775931","https://openalex.org/W2922554509"],"abstract_inverted_index":{"In":[0,34],"low":[1,81],"temperature":[2],"polycrystalline":[3],"silicon":[4],"(LTPS)":[5],"based":[6],"display":[7],"technologies,":[8],"the":[9,53,76,87,92,119,122,126,163],"electrical":[10],"parameter":[11],"variations":[12,55],"in":[13,25,103,178],"thin":[14],"film":[15],"transistors":[16],"(TFTs)":[17],"caused":[18],"by":[19,130],"random":[20],"grain":[21],"boundaries":[22],"(GBs)":[23],"result":[24],"significant":[26],"yield":[27,135,138,177],"loss,":[28],"thereby":[29],"impeding":[30],"its":[31],"wide":[32],"deployment.":[33],"this":[35],"paper,":[36],"from":[37],"a":[38,46],"system":[39],"and":[40,62,90,115,134,169],"circuit":[41,100,124],"design":[42,49],"perspective,":[43],"we":[44],"propose":[45],"new":[47],"self-repair":[48],"methodology":[50],"to":[51,74,159,174],"compensate":[52],"GB-induced":[54],"for":[56,79,94,110,142,166],"LTPS":[57],"liquid":[58],"crystal":[59],"displays":[60,157],"(LCDs)":[61],"active-matrix":[63],"organic":[64],"light":[65],"emitting":[66],"diode":[67],"(AMOLED)":[68],"displays.":[69],"The":[70,98],"key":[71],"idea":[72],"is":[73,140],"extend":[75],"charging":[77],"time":[78],"detected":[80],"drivability":[82],"pixel":[83],"switches,":[84],"hence,":[85],"suppressing":[86],"brightness":[88],"non-uniformity":[89],"eliminating":[91],"need":[93],"large":[95,145,179],"voltage":[96,129],"margins.":[97],"proposed":[99,123],"was":[101],"implemented":[102],"VGA":[104],"LCD":[105],"panels":[106,181],"which":[107],"were":[108],"used":[109],"prediction":[111],"of":[112],"power":[113,151,171,184],"consumption":[114,172],"yield.":[116],"Based":[117],"on":[118],"simulation":[120],"results,":[121],"decreases":[125],"required":[127],"supply":[128],"20%":[131],"without":[132],"performance":[133],"degradation.":[136],"7%":[137],"enhancement":[139],"observed":[141],"high":[143],"resolution,":[144],"sized":[146,180],"LCDs":[147],"while":[148],"incurring":[149],"negligible":[150],"penalty.":[152],"This":[153],"technique":[154],"enables":[155],"LTPS-based":[156],"either":[158],"further":[160],"scale":[161],"down":[162],"device":[164],"size":[165],"higher":[167],"integration":[168],"lower":[170],"or":[173],"have":[175],"superior":[176],"with":[182],"small":[183],"overhead.":[185]},"counts_by_year":[{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}