{"id":"https://openalex.org/W3012962687","doi":"https://doi.org/10.1109/asp-dac47756.2020.9045582","title":"Impact of Self-Heating on Performance, Power and Reliability in FinFET Technology","display_name":"Impact of Self-Heating on Performance, Power and Reliability in FinFET Technology","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3012962687","doi":"https://doi.org/10.1109/asp-dac47756.2020.9045582","mag":"3012962687"},"language":"en","primary_location":{"id":"doi:10.1109/asp-dac47756.2020.9045582","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asp-dac47756.2020.9045582","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027765192","display_name":"Victor M. van Santen","orcid":"https://orcid.org/0000-0002-6629-4713"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Victor M. van Santen","raw_affiliation_strings":["Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064095385","display_name":"Paul R. Gen\u00dfler","orcid":"https://orcid.org/0000-0002-7175-7284"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Paul R. Genssler","raw_affiliation_strings":["Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030362624","display_name":"Om Prakash","orcid":"https://orcid.org/0000-0003-1219-2700"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Om Prakash","raw_affiliation_strings":["Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054764590","display_name":"Simon Thomann","orcid":"https://orcid.org/0000-0002-7902-9353"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Simon Thomann","raw_affiliation_strings":["Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063508488","display_name":"J\u00f6rg Henkel","orcid":"https://orcid.org/0000-0001-9602-2922"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jorg Henkel","raw_affiliation_strings":["Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5027765192"],"corresponding_institution_ids":["https://openalex.org/I102335020"],"apc_list":null,"apc_paid":null,"fwci":0.411,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.59859856,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"68","last_page":"73"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7395455241203308},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7247778177261353},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6627651453018188},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6358303427696228},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6000716090202332},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5892031192779541},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.536865234375},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.46849876642227173},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4396742880344391},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.43311020731925964},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.43174633383750916},{"id":"https://openalex.org/keywords/nanowire","display_name":"Nanowire","score":0.4279121160507202},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4254140853881836},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4218376576900482},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.41707879304885864},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4103461802005768},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.37566620111465454},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22290968894958496},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19766893982887268}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7395455241203308},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7247778177261353},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6627651453018188},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6358303427696228},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6000716090202332},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5892031192779541},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.536865234375},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.46849876642227173},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4396742880344391},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.43311020731925964},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.43174633383750916},{"id":"https://openalex.org/C74214498","wikidata":"https://www.wikidata.org/wiki/Q631739","display_name":"Nanowire","level":2,"score":0.4279121160507202},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4254140853881836},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4218376576900482},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.41707879304885864},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4103461802005768},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.37566620111465454},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22290968894958496},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19766893982887268},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/asp-dac47756.2020.9045582","is_oa":false,"landing_page_url":"https://doi.org/10.1109/asp-dac47756.2020.9045582","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8799999952316284}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W100799738","https://openalex.org/W167500274","https://openalex.org/W1982756257","https://openalex.org/W2025338205","https://openalex.org/W2107950637","https://openalex.org/W2147657366","https://openalex.org/W2171188814","https://openalex.org/W2291787259","https://openalex.org/W2591285794","https://openalex.org/W2613754741","https://openalex.org/W2729749234","https://openalex.org/W2788656907","https://openalex.org/W2887436037","https://openalex.org/W2898581147","https://openalex.org/W2908807758","https://openalex.org/W2909727190","https://openalex.org/W2921402340","https://openalex.org/W2977321434","https://openalex.org/W2994706186","https://openalex.org/W3036985142","https://openalex.org/W4243938558","https://openalex.org/W6696752427","https://openalex.org/W6780153726"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W3150866391","https://openalex.org/W2942040471","https://openalex.org/W1977042749","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W2542162669","https://openalex.org/W2088008649","https://openalex.org/W2112214579","https://openalex.org/W2166033074"],"abstract_inverted_index":{"Self-heating":[0,64],"is":[1,44],"one":[2],"of":[3,62,85,125],"the":[4,21,24,33,41,47,53,60,81,86,123],"biggest":[5],"threats":[6],"to":[7,75,77,80,90,112],"reliability":[8,61,102],"in":[9,36,67,117,128,135,141],"current":[10],"and":[11,17,58,137],"advanced":[12],"CMOS":[13],"technologies":[14],"like":[15],"FinFET":[16,76],"Nanowire,":[18],"respectively.":[19],"Encapsulating":[20],"channel":[22,34,38,50],"with":[23],"gate":[25],"dielectric":[26],"improved":[27],"electrostatics,":[28],"but":[29],"also":[30,121],"thermally":[31],"insulates":[32],"resulting":[35],"elevated":[37,91],"temperatures":[39,51],"as":[40,132],"generated":[42],"heat":[43],"trapped":[45],"within":[46],"channel.":[48],"Elevated":[49],"lowers":[52],"performance,":[54],"increases":[55],"leakage":[56],"power":[57],"degrades":[59],"circuits.":[63,100,119],"becomes":[65],"worse":[66],"each":[68],"new":[69],"transistor":[70,74],"structure":[71],"(from":[72],"planar":[73],"Nanowire)":[78],"due":[79],"ever-increasing":[82],"thermal":[83],"resistance":[84],"transistor.":[87],"This":[88,106],"leads":[89],"temperatures,":[92],"which":[93],"must":[94],"be":[95,104,145],"carefully":[96],"considered":[97],"while":[98],"designing":[99],"Otherwise,":[101],"cannot":[103],"ensured.":[105],"work":[107],"presents":[108],"a":[109],"self-heating":[110,115,139],"study":[111],"illustrate":[113],"how":[114,138],"matters":[116],"digital":[118],"It":[120],"explores":[122],"impact":[124],"running":[126],"workloads":[127],"SRAM":[129,142],"arrays,":[130],"such":[131],"register":[133],"files":[134],"CPUs,":[136],"effects":[140],"cells":[143],"can":[144],"mitigated.":[146]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}